Inventor
REBOUD VINCENT
FR19 patents
⚠️ This page may combine multiple inventors who share the name “REBOUD VINCENT”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
COMMISSARIAT ENERGIE ATOMIQUE
18 patentsUS10490976B2Nov 26, 2019
Laser source with a germanium-based suspended membrane and an integrated waveguide that participates in forming the optical cavity
COMMISSARIAT ENERGIE ATOMIQUE3 citations72
US10411434B2Sep 10, 2019
Semiconductor structure comprising a tensilely stressed suspended membrane including an optical cavity
COMMISSARIAT ENERGIE ATOMIQUE3 citations72
US9632032B2Apr 25, 2017
Method for manufacturing a substrate for surface-enhanced Raman spectography
COMMISSARIAT ENERGIE ATOMIQUE5 citations72
US11251339B2Feb 15, 2022
Process for fabricating an optoelectronic device for emitting infrared light comprising a GeSn-based active layer
COMMISSARIAT ENERGIE ATOMIQUE2 citations71
US9774167B2Sep 26, 2017
Method of production of a semiconducting structure comprising a strained portion
COMMISSARIAT ENERGIE ATOMIQUE2 citations66
US10699902B2Jun 30, 2020
Process for producing a strained layer based on germanium-tin
COMMISSARIAT ENERGIE ATOMIQUE1 citations60
US10666019B2May 26, 2020
Semiconductor structure including a suspended membrane containing a central segment of structured thickness
COMMISSARIAT ENERGIE ATOMIQUE1 citations56
US12592543B2Mar 31, 2026
Laser comprising a distributed bragg mirror and production method
COMMISSARIAT ENERGIE ATOMIQUE0 citations50
US12244119B2Mar 4, 2025
Laser comprising a distributed Bragg mirror and production method thereof
COMMISSARIAT ENERGIE ATOMIQUE0 citations50
US11942328B2Mar 26, 2024
Method of making a distributed Bragg mirror
COMMISSARIAT ENERGIE ATOMIQUE0 citations50
US10944235B2Mar 9, 2021
Method for producing a light source and light source
COMMISSARIAT ENERGIE ATOMIQUE0 citations47
US11165225B2Nov 2, 2021
Optoelectronic device comprising a central segment tensilely strained along a first axis and electrically biased along a second axis
COMMISSARIAT ENERGIE ATOMIQUE0 citations44
US12040595B2Jul 16, 2024
Optoelectronic device comprising a semiconductor layer based on GeSn having a single-crystal portion with a direct band structure and an underlying barrier region
COMMISSARIAT ENERGIE ATOMIQUE0 citations43
US9502864B2Nov 22, 2016
Device comprising a strained germanium membrane
COMMISSARIAT ENERGIE ATOMIQUE0 citations42
US9933354B2Apr 3, 2018
Method for manufacturing a substrate for surface-enhanced raman spectography and substrate
COMMISSARIAT ENERGIE ATOMIQUE0 citations41
US9784684B2Oct 10, 2017
Method for manufacturing a substrate for surface-enhanced Raman spectography and substrate
COMMISSARIAT ENERGIE ATOMIQUE0 citations41
US10739583B2Aug 11, 2020
Method for obtaining at least one structure approximating a sought structure by reflow
COMMISSARIAT ENERGIE ATOMIQUE0 citations35
US9735317B2Aug 15, 2017
Method for forming a semiconducting portion by epitaxial growth on a strained portion
COMMISSARIAT ENERGIE ATOMIQUE0 citations35