P

Inventor

REBOUD VINCENT

FR19 patents
⚠️ This page may combine multiple inventors who share the name “REBOUD VINCENT”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

COMMISSARIAT ENERGIE ATOMIQUE

18 patents
US10490976B2Nov 26, 2019

Laser source with a germanium-based suspended membrane and an integrated waveguide that participates in forming the optical cavity

COMMISSARIAT ENERGIE ATOMIQUE3 citations72
US10411434B2Sep 10, 2019

Semiconductor structure comprising a tensilely stressed suspended membrane including an optical cavity

COMMISSARIAT ENERGIE ATOMIQUE3 citations72
US9632032B2Apr 25, 2017

Method for manufacturing a substrate for surface-enhanced Raman spectography

COMMISSARIAT ENERGIE ATOMIQUE5 citations72
US11251339B2Feb 15, 2022

Process for fabricating an optoelectronic device for emitting infrared light comprising a GeSn-based active layer

COMMISSARIAT ENERGIE ATOMIQUE2 citations71
US9774167B2Sep 26, 2017

Method of production of a semiconducting structure comprising a strained portion

COMMISSARIAT ENERGIE ATOMIQUE2 citations66
US10699902B2Jun 30, 2020

Process for producing a strained layer based on germanium-tin

COMMISSARIAT ENERGIE ATOMIQUE1 citations60
US10666019B2May 26, 2020

Semiconductor structure including a suspended membrane containing a central segment of structured thickness

COMMISSARIAT ENERGIE ATOMIQUE1 citations56
US12592543B2Mar 31, 2026

Laser comprising a distributed bragg mirror and production method

COMMISSARIAT ENERGIE ATOMIQUE0 citations50
US12244119B2Mar 4, 2025

Laser comprising a distributed Bragg mirror and production method thereof

COMMISSARIAT ENERGIE ATOMIQUE0 citations50
US11942328B2Mar 26, 2024

Method of making a distributed Bragg mirror

COMMISSARIAT ENERGIE ATOMIQUE0 citations50
US10944235B2Mar 9, 2021

Method for producing a light source and light source

COMMISSARIAT ENERGIE ATOMIQUE0 citations47
US11165225B2Nov 2, 2021

Optoelectronic device comprising a central segment tensilely strained along a first axis and electrically biased along a second axis

COMMISSARIAT ENERGIE ATOMIQUE0 citations44
US12040595B2Jul 16, 2024

Optoelectronic device comprising a semiconductor layer based on GeSn having a single-crystal portion with a direct band structure and an underlying barrier region

COMMISSARIAT ENERGIE ATOMIQUE0 citations43
US9502864B2Nov 22, 2016

Device comprising a strained germanium membrane

COMMISSARIAT ENERGIE ATOMIQUE0 citations42
US9933354B2Apr 3, 2018

Method for manufacturing a substrate for surface-enhanced raman spectography and substrate

COMMISSARIAT ENERGIE ATOMIQUE0 citations41
US9784684B2Oct 10, 2017

Method for manufacturing a substrate for surface-enhanced Raman spectography and substrate

COMMISSARIAT ENERGIE ATOMIQUE0 citations41
US10739583B2Aug 11, 2020

Method for obtaining at least one structure approximating a sought structure by reflow

COMMISSARIAT ENERGIE ATOMIQUE0 citations35
US9735317B2Aug 15, 2017

Method for forming a semiconducting portion by epitaxial growth on a strained portion

COMMISSARIAT ENERGIE ATOMIQUE0 citations35

COMMISSARIAT À L EN ATOMIQUE ET AUX EN ALTERNATIVES

1 patent