Inventor
WATANABE YUKIMUNE
JP14 patents
⚠️ This page may combine multiple inventors who share the name “WATANABE YUKIMUNE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SEIKO EPSON CORP
11 patentsUS7645655B2Jan 12, 2010
Semiconductor device and manufacturing method of the semiconductor device
SEIKO EPSON CORP7 citations72
US7968396B2Jun 28, 2011
Semiconductor device and manufacturing method of the semiconductor device
SEIKO EPSON CORP5 citations61
US7947560B2May 24, 2011
Method of nickel disilicide formation and method of nickel disilicate source/drain formation
SEIKO EPSON CORP2 citations61
US11404269B2Aug 2, 2022
Single crystal substrate with undulating ridges and silicon carbide substrate
SEIKO EPSON CORP0 citations55
US9882010B2Jan 30, 2018
Silicon carbide substrate and method for producing silicon carbide substrate
SEIKO EPSON CORP1 citations50
US9536954B2Jan 3, 2017
Substrate with silicon carbide film, semiconductor device, and method for producing substrate with silicon carbide film
SEIKO EPSON CORP0 citations50
US8847236B2Sep 30, 2014
Semiconductor substrate and semiconductor substrate manufacturing method
SEIKO EPSON CORP1 citations50
US9758902B2Sep 12, 2017
Method for producing 3C-SiC epitaxial layer, 3C-SiC epitaxial substrate, and semiconductor device
SEIKO EPSON CORP0 citations45
US11142821B2Oct 12, 2021
Method for producing single crystal substrate having a plurality of grooves using a pair of masks
SEIKO EPSON CORP0 citations44
US9732439B2Aug 15, 2017
Method of forming a laminate of epitaxially grown cubic silicon carbide layers, and method of forming a substrate-attached laminate of epitaxially grown cubic silicon carbide layers
SEIKO EPSON CORP0 citations40
US9362368B2Jun 7, 2016
Substrate with silicon carbide film, method for producing substrate with silicon carbide film, and semiconductor device
SEIKO EPSON CORP0 citations40
WATANABE YUKIMUNE
2 patentsUS9064802B2Jun 23, 2015
Method of manufacturing semiconductor device and semiconductor device having oxide film crystallized by a thermal treatment
WATANABE YUKIMUNE5 citations68
US8986464B2Mar 24, 2015
Semiconductor substrate and method for producing semiconductor substrate
WATANABE YUKIMUNE0 citations47