Inventor
JOHNSON FRANK S
US17 patents
⚠️ This page may combine multiple inventors who share the name “JOHNSON FRANK S”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TEXAS INSTRUMENTS INC
11 patentsUS6570242B1May 27, 2003
Bipolar transistor with high breakdown voltage collector
TEXAS INSTRUMENTS INC16 citations92
US6030864AFeb 29, 2000
Vertical NPN transistor for 0.35 micrometer node CMOS logic technology
TEXAS INSTRUMENTS INC30 citations92
US6518111B1Feb 11, 2003
Method for manufacturing and structure of semiconductor device with dielectric diffusion source and CMOS integration
TEXAS INSTRUMENTS INC15 citations83
US6130136AOct 10, 2000
Bipolar transistor with L-shaped base-emitter spacer
TEXAS INSTRUMENTS INC15 citations72
US7892908B2Feb 22, 2011
Integration scheme for changing crystal orientation in hybrid orientation technology (HOT) using direct silicon bonded (DSB) substrates
TEXAS INSTRUMENTS INC2 citations62
US7456070B2Nov 25, 2008
Method of fabricating a bipolar transistor with high breakdown voltage collector
TEXAS INSTRUMENTS INC5 citations62
US7960280B2Jun 14, 2011
Process method to fully salicide (FUSI) both N-poly and P-poly on a CMOS flow
TEXAS INSTRUMENTS INC0 citations52
US7892906B2Feb 22, 2011
Method for forming CMOS transistors having FUSI gate electrodes and targeted work functions
TEXAS INSTRUMENTS INC1 citations52
US9123570B2Sep 1, 2015
Integration scheme for changing crystal orientation in hybrid orientation technology (HOT) using direct silicon bonded (DSB) substrates
TEXAS INSTRUMENTS INC0 citations51
US7943451B2May 17, 2011
Integration scheme for reducing border region morphology in hybrid orientation technology (HOT) using direct silicon bonded (DSB) substrates
TEXAS INSTRUMENTS INC0 citations41
US6969880B2Nov 29, 2005
High capacitive density stacked decoupling capacitor structure
TEXAS INSTRUMENTS INC0 citations40