P

Inventor

LIN HAN-CHUNG

TW12 patents
⚠️ This page may combine multiple inventors who share the name “LIN HAN-CHUNG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

5 patents
US9196751B2Nov 24, 2015

Junction FET semiconductor device with dummy mask structures for improved dimension control and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations62
US9508605B2Nov 29, 2016

Dummy gate for a high voltage transistor device

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US11036911B2Jun 15, 2021

Charging prevention method and structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10243075B2Mar 26, 2019

Junction FET semiconductor device with dummy mask structures for improved dimension control and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9818866B2Nov 14, 2017

Junction FET semiconductor device with dummy mask structures for improved dimension control and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51

IMEC VZW

3 patents
US10672894B2Jun 2, 2020

Method of fabricating ferroelectric field-effect transistor

IMEC VZW3 citations71
US11056376B2Jul 6, 2021

Removing an organic sacrificial material from a two-dimensional material

IMEC VZW0 citations53
US9691872B2Jun 27, 2017

III-V semiconductor device with interfacial layer

IMEC VZW0 citations39

TSAI YUNG-CHIH

1 patent
US8552495B2Oct 8, 2013

Dummy gate for a high voltage transistor device

TSAI YUNG-CHIH12 citations82

WANG WEI-E

1 patent
US8524562B2Sep 3, 2013

Method for reducing Fermi-Level-Pinning in a non-silicon channel MOS device

WANG WEI-E11 citations82

UNIV NORTHWESTERN

1 patent
US7633130B2Dec 15, 2009

High-performance field effect transistors with self-assembled nanodielectrics

UNIV NORTHWESTERN2 citations62

TAIWAN SEMICONDUCTOR MFG

1 patent
US9209183B2Dec 8, 2015

Dummy gate for a high voltage transistor device

TAIWAN SEMICONDUCTOR MFG1 citations61