Inventor
WANG HSIEN-CHENG
TW41 patents
⚠️ This page may combine multiple inventors who share the name “WANG HSIEN-CHENG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
26 patentsUS9779984B1Oct 3, 2017
Method of forming trenches with different depths
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations84
US9437495B2Sep 6, 2016
Mask-less dual silicide process
TAIWAN SEMICONDUCTOR MFG CO LTD13 citations84
US10861740B2Dec 8, 2020
Method of forming trenches with different depths
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10163703B2Dec 25, 2018
Method for forming self-aligned contact
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11244832B2Feb 8, 2022
Semiconductor structure with mask structure
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US9449886B2Sep 20, 2016
Semiconductor device and formation thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations72
US9425048B2Aug 23, 2016
Mechanisms for semiconductor device structure
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations72
US11682579B2Jun 20, 2023
Method of forming trenches with different depths
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11348830B2May 31, 2022
Method of forming trenches with different depths
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11121128B2Sep 14, 2021
Structure and method for alignment marks
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10790197B2Sep 29, 2020
Semiconductor arrangement and formation thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10665585B2May 26, 2020
Structure and method for alignment marks
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10510614B2Dec 17, 2019
Semiconductor arrangement and formation thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10283403B2May 7, 2019
Method of forming trenches with different depths
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10276448B2Apr 30, 2019
Semiconductor arrangement and formation thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10163738B2Dec 25, 2018
Structure and method for overlay marks
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US10109530B2Oct 23, 2018
Semiconductor arrangement and formation thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9754838B2Sep 5, 2017
Semiconductor arrangement and formation thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9679812B2Jun 13, 2017
Semiconductor device with self-aligned contact
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9508844B2Nov 29, 2016
Semiconductor arrangement and formation thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10727068B2Jul 28, 2020
Method for manufacturing semiconductor structure with mask structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10468257B2Nov 5, 2019
Mechanisms for semiconductor device structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10276437B2Apr 30, 2019
Contact structure of gate structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9576847B2Feb 21, 2017
Method for forming integrated circuit structure with thinned contact
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9536754B2Jan 3, 2017
Method of forming contact structure of gate structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9312259B2Apr 12, 2016
Integrated circuit structure with thinned contact
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
TAIWAN SEMICONDUCTOR MFG
8 patentsUS9318488B2Apr 19, 2016
Semiconductor device and formation thereof
TAIWAN SEMICONDUCTOR MFG5 citations83
US9331173B2May 3, 2016
Semiconductor device having a carbon containing insulation layer formed under the source/drain
TAIWAN SEMICONDUCTOR MFG5 citations72
US9299657B2Mar 29, 2016
Semiconductor device and method for manufacturing semiconductor device
TAIWAN SEMICONDUCTOR MFG2 citations62
US9123563B2Sep 1, 2015
Method of forming contact structure of gate structure
TAIWAN SEMICONDUCTOR MFG3 citations62
US9280041B2Mar 8, 2016
Cross quadrupole double lithography method using two complementary apertures
TAIWAN SEMICONDUCTOR MFG0 citations52
US9093299B1Jul 28, 2015
Semiconductor arrangement and formation thereof
TAIWAN SEMICONDUCTOR MFG1 citations51
US7972761B2Jul 5, 2011
Photoresist materials and photolithography process
TAIWAN SEMICONDUCTOR MFG0 citations49
US9214347B2Dec 15, 2015
Overlay mark assistant feature
TAIWAN SEMICONDUCTOR MFG1 citations48
WANG HSIEN-CHENG
4 patentsUS8507177B2Aug 13, 2013
Photoresist materials and photolithography processes
WANG HSIEN-CHENG34 citations92
US8416393B2Apr 9, 2013
Cross quadrupole double lithography method and apparatus for semiconductor device fabrication using two apertures
WANG HSIEN-CHENG2 citations61
US9543406B2Jan 10, 2017
Structure and method for overlay marks
WANG HSIEN-CHENG1 citations51
US8848163B2Sep 30, 2014
Photoresist materials and photolithography processes
WANG HSIEN-CHENG0 citations51