Inventor

CHAN TZE HO SIMON

SG20 patents

⚠️ This page may combine multiple inventors who share the name “CHAN TZE HO SIMON”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CHAN TZE HO SIMON

GLOBALFOUNDRIES SG PTE LTD

Low power memory cell with high sensing margin

Energy efficient three-terminal voltage controlled memory cell

Methods for fabricatingintegrated circuits with spin torque transfer magnetic randomaccess memory (STT-MRAM) including a passivation layer formed along lateral sidewalls of a magnetic tunnel junction of the STT-MRAM

Non-volatile memory cell arrays and methods of fabricating semiconductor devices

Nonvolative memory

Nonvolative memory with filament

Neuromorphic memories with split gate flash multi-level cell and method of making the same

Resistive non-volatile memory

Thin film based passive devices and methods of forming the same

Stackable non-volatile memory

Memory cells and methods for writing data to memory cells

CHARTERED SEMICONDUCTOR MFG

Planar voltage contrast test structure

Low voltage programmable and erasable flash EEPROM

Horizontal TRAM and method for the fabrication thereof

Horizontal tram

Low voltage programmable and erasable flash EEPROM

Means to erase a low voltage programmable and erasable flash EEPROM

Planar voltage contrast test structure and method

Method to lower work function of gate electrode through Ge implantation

CHAN TZE HO SIMON

Non-volatile memory manufacturing method using STI trench implantation