Inventor
IWATA DAI
JP10 patents
⚠️ This page may combine multiple inventors who share the name “IWATA DAI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SANDISK TECHNOLOGIES LLC
9 patentsUS9991280B2Jun 5, 2018
Multi-tier three-dimensional memory devices containing annular dielectric spacers within memory openings and methods of making the same
SANDISK TECHNOLOGIES LLC40 citations97
US10770459B2Sep 8, 2020
CMOS devices containing asymmetric contact via structures
SANDISK TECHNOLOGIES LLC14 citations85
US11322597B2May 3, 2022
Gate material-based capacitor and resistor structures and methods of forming the same
SANDISK TECHNOLOGIES LLC3 citations71
US12027520B2Jul 2, 2024
Transistor circuits including fringeless transistors and method of making the same
SANDISK TECHNOLOGIES LLC2 citations66
US10748919B2Aug 18, 2020
Multi-tier three-dimensional memory devices containing annular dielectric spacers within memory openings and methods of making the same
SANDISK TECHNOLOGIES LLC0 citations51
US9613971B2Apr 4, 2017
Select gates with central open areas
SANDISK TECHNOLOGIES LLC0 citations51
US12094944B2Sep 17, 2024
Transistor circuits including fringeless transistors and method of making the same
SANDISK TECHNOLOGIES LLC0 citations50
US11626397B2Apr 11, 2023
Gate material-based capacitor and resistor structures and methods of forming the same
SANDISK TECHNOLOGIES LLC0 citations50
US11837601B2Dec 5, 2023
Transistor circuits including fringeless transistors and method of making the same
SANDISK TECHNOLOGIES LLC0 citations49