Inventor
LIN GER-PIN
TW15 patents
⚠️ This page may combine multiple inventors who share the name “LIN GER-PIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED MICROELECTRONICS CORP
10 patentsUS10217750B1Feb 26, 2019
Buried word line structure and method of making the same
UNITED MICROELECTRONICS CORP9 citations83
US10497704B2Dec 3, 2019
Buried word line structure and method of making the same
UNITED MICROELECTRONICS CORP3 citations72
US10056288B1Aug 21, 2018
Semiconductor device and fabrication method thereof
UNITED MICROELECTRONICS CORP2 citations71
US10608086B2Mar 31, 2020
Semiconductor structure with diffusion barrier region and manufacturing method thereof
UNITED MICROELECTRONICS CORP1 citations62
US10658365B2May 19, 2020
Semiconductor device and method of manufacturing the same
UNITED MICROELECTRONICS CORP1 citations61
US10861855B2Dec 8, 2020
Semiconductor device and method of manufacturing the same
UNITED MICROELECTRONICS CORP0 citations51
US10847517B2Nov 24, 2020
Method for forming semiconductor device having a multi-thickness gate trench dielectric layer
UNITED MICROELECTRONICS CORP0 citations51
US10373958B2Aug 6, 2019
Semiconductor device having a multi-thickness gate trench dielectric layer
UNITED MICROELECTRONICS CORP0 citations51
US10332889B2Jun 25, 2019
Method of manufacturing a semiconductor device
UNITED MICROELECTRONICS CORP0 citations51
US10056388B2Aug 21, 2018
Method for fabricating semiconductor device
UNITED MICROELECTRONICS CORP0 citations49
ADVANCED ION BEAM TECH INC
3 patentsUS9450078B1Sep 20, 2016
Forming punch-through stopper regions in finFET devices
ADVANCED ION BEAM TECH INC20 citations92
US9431247B2Aug 30, 2016
Method for ion implantation
ADVANCED ION BEAM TECH INC1 citations48
US9748072B2Aug 29, 2017
Lower dose rate ion implantation using a wider ion beam
ADVANCED ION BEAM TECH INC0 citations37