P

Inventor

PARK IL HAN

KR64 patents
⚠️ This page may combine multiple inventors who share the name “PARK IL HAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

SAMSUNG ELECTRONICS CO LTD

46 patents
US7646041B2Jan 12, 2010

Non-volatile memory devices including vertical channels, methods of operating, and methods of fabricating the same

SAMSUNG ELECTRONICS CO LTD59 citations98
US9349482B2May 24, 2016

Nonvolatile memory device and operating method thereof

SAMSUNG ELECTRONICS CO LTD37 citations94
US9001579B2Apr 7, 2015

Semiconductor memory device for and method of applying temperature-compensated word line voltage during read operation

SAMSUNG ELECTRONICS CO LTD26 citations89
US10937508B2Mar 2, 2021

Nonvolatile memory devices and methods of operating a nonvolatile memory

SAMSUNG ELECTRONICS CO LTD8 citations84
US10672791B2Jun 2, 2020

Nonvolatile memory device having a vertical structure and a memory system including the same

SAMSUNG ELECTRONICS CO LTD8 citations84
US10157674B2Dec 18, 2018

Programming method of a nonvolatile memory device and a method thereof

SAMSUNG ELECTRONICS CO LTD12 citations84
US9543026B2Jan 10, 2017

Nonvolatile memory device and operating method thereof

SAMSUNG ELECTRONICS CO LTD7 citations84
US9019773B2Apr 28, 2015

Nonvolatile memory device and method of operating the same

SAMSUNG ELECTRONICS CO LTD9 citations84
US10163518B2Dec 25, 2018

Non-volatile memory device for reading data with optimized read voltage

SAMSUNG ELECTRONICS CO LTD14 citations83
US10061633B2Aug 28, 2018

Nonvolatile memory device and program method and program verification method thereof

SAMSUNG ELECTRONICS CO LTD8 citations83
US9064545B2Jun 23, 2015

Nonvolatile memory device having adjustable program pulse width

SAMSUNG ELECTRONICS CO LTD7 citations83
US9087590B2Jul 21, 2015

Nonvolatile memory device and method of programming the same

SAMSUNG ELECTRONICS CO LTD6 citations82
US10629267B2Apr 21, 2020

Nonvolatile memory device and method of programming in the same

SAMSUNG ELECTRONICS CO LTD8 citations81
US10366769B2Jul 30, 2019

Nonvolatile memory device and programming method for fast and slow cells thereof

SAMSUNG ELECTRONICS CO LTD7 citations79
US12040020B2Jul 16, 2024

Memory device, method of operating the same, and method of operating storage device including the same

SAMSUNG ELECTRONICS CO LTD2 citations73
US11238942B2Feb 1, 2022

Nonvolatile memory devices

SAMSUNG ELECTRONICS CO LTD2 citations73
US11211403B2Dec 28, 2021

Nonvolatile memory device having a vertical structure and a memory system including the same

SAMSUNG ELECTRONICS CO LTD2 citations73
US10978481B2Apr 13, 2021

Nonvolatile memory device having a vertical structure and a memory system including the same

SAMSUNG ELECTRONICS CO LTD4 citations73
US10700079B2Jun 30, 2020

Nonvolatile memory device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD4 citations73
US10553291B2Feb 4, 2020

Nonvolatile memory device and operating method thereof

SAMSUNG ELECTRONICS CO LTD5 citations73
US10152380B2Dec 11, 2018

Memory device, memory system, and method of operating memory device

SAMSUNG ELECTRONICS CO LTD6 citations73
US10030895B2Jul 24, 2018

Magnetic regenerator unit and magnetic cooling system with the same

SAMSUNG ELECTRONICS CO LTD4 citations73
US11756613B2Sep 12, 2023

Nonvolatile memory device

SAMSUNG ELECTRONICS CO LTD1 citations72
US10665312B2May 26, 2020

Nonvolatile memory device configured to adjust a read parameter based on a degradation level

SAMSUNG ELECTRONICS CO LTD3 citations72
US10614889B2Apr 7, 2020

Nonvolatile memory device and method of performing an erase operation in the same

SAMSUNG ELECTRONICS CO LTD2 citations72
US10482973B2Nov 19, 2019

Memory devices including a word line defect detection circuit

SAMSUNG ELECTRONICS CO LTD2 citations72
US9899097B2Feb 20, 2018

Nonvolatile memory device and method of programming the same

SAMSUNG ELECTRONICS CO LTD3 citations72
US11056193B2Jul 6, 2021

Non-volatile memory devices having enhanced erase control circuits therein

SAMSUNG ELECTRONICS CO LTD2 citations71
US10902922B2Jan 26, 2021

Nonvolatile memory device storing data in sub-blocks and operating method thereof

SAMSUNG ELECTRONICS CO LTD5 citations71
US10854250B2Dec 1, 2020

Memory device including a circuit for detecting word line defect and operating method thereof

SAMSUNG ELECTRONICS CO LTD4 citations71
US10892015B2Jan 12, 2021

Nonvolatile memory device and method of programming in the same

SAMSUNG ELECTRONICS CO LTD3 citations70
US11081186B2Aug 3, 2021

Non-volatile memory device and erasing method of the same

SAMSUNG ELECTRONICS CO LTD2 citations69
US10176881B2Jan 8, 2019

Non-volatile memory devices having temperature and location dependent word line operating voltages

SAMSUNG ELECTRONICS CO LTD3 citations67
US8982618B2Mar 17, 2015

Nonvolatile memory device and related method of operation

SAMSUNG ELECTRONICS CO LTD2 citations63
US12165721B2Dec 10, 2024

Nonvolatile memory device and operation method of detecting defective memory cells

SAMSUNG ELECTRONICS CO LTD0 citations62
US11574692B2Feb 7, 2023

Nonvolatile memory device and operation method of detecting defective memory cells

SAMSUNG ELECTRONICS CO LTD0 citations62
US11233068B2Jan 25, 2022

Nonvolatile memory device having a vertical structure and a memory system including the same

SAMSUNG ELECTRONICS CO LTD0 citations62
US11127472B2Sep 21, 2021

Memory device for changing pass voltage

SAMSUNG ELECTRONICS CO LTD1 citations62
US10607705B2Mar 31, 2020

Memory device including a deterioration level detection circuit

SAMSUNG ELECTRONICS CO LTD1 citations62
US9406383B2Aug 2, 2016

Non-volatile memory device and method of programming the same

SAMSUNG ELECTRONICS CO LTD2 citations62
US12469552B2Nov 11, 2025

Nonvolatile memory device, operation method of a nonvolatile memory device, and operation method of a controller

SAMSUNG ELECTRONICS CO LTD0 citations61
US11437094B2Sep 6, 2022

Nonvolatile memory device, storage device, and operation method of storage device

SAMSUNG ELECTRONICS CO LTD0 citations61
US10910080B2Feb 2, 2021

Nonvolatile memory device configured to adjust a read parameter based on degradation level

SAMSUNG ELECTRONICS CO LTD1 citations61
US10748617B2Aug 18, 2020

Nonvolatile memory device and method of operating the same

SAMSUNG ELECTRONICS CO LTD1 citations61
US10332607B2Jun 25, 2019

Methods of operating a nonvolatile memory device and the nonvolatile memory device thereof

SAMSUNG ELECTRONICS CO LTD1 citations61
US9299445B2Mar 29, 2016

Nonvolatile memory device and method of operating the same

SAMSUNG ELECTRONICS CO LTD2 citations61

PARK BYUNG GOOK

1 patent

CHUNG YOUNG-KI

1 patent

PARK IL HAN

1 patent

SEOUL NAT UNIV IND FOUNDATION

1 patent

Showing the top 50 of 64 patents by PatentIndex Score.