Inventor
PARK IL HAN
KR64 patents
⚠️ This page may combine multiple inventors who share the name “PARK IL HAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
46 patentsUS7646041B2Jan 12, 2010
Non-volatile memory devices including vertical channels, methods of operating, and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD59 citations98
US9349482B2May 24, 2016
Nonvolatile memory device and operating method thereof
SAMSUNG ELECTRONICS CO LTD37 citations94
US9001579B2Apr 7, 2015
Semiconductor memory device for and method of applying temperature-compensated word line voltage during read operation
SAMSUNG ELECTRONICS CO LTD26 citations89
US10937508B2Mar 2, 2021
Nonvolatile memory devices and methods of operating a nonvolatile memory
SAMSUNG ELECTRONICS CO LTD8 citations84
US10672791B2Jun 2, 2020
Nonvolatile memory device having a vertical structure and a memory system including the same
SAMSUNG ELECTRONICS CO LTD8 citations84
US10157674B2Dec 18, 2018
Programming method of a nonvolatile memory device and a method thereof
SAMSUNG ELECTRONICS CO LTD12 citations84
US9543026B2Jan 10, 2017
Nonvolatile memory device and operating method thereof
SAMSUNG ELECTRONICS CO LTD7 citations84
US9019773B2Apr 28, 2015
Nonvolatile memory device and method of operating the same
SAMSUNG ELECTRONICS CO LTD9 citations84
US10163518B2Dec 25, 2018
Non-volatile memory device for reading data with optimized read voltage
SAMSUNG ELECTRONICS CO LTD14 citations83
US10061633B2Aug 28, 2018
Nonvolatile memory device and program method and program verification method thereof
SAMSUNG ELECTRONICS CO LTD8 citations83
US9064545B2Jun 23, 2015
Nonvolatile memory device having adjustable program pulse width
SAMSUNG ELECTRONICS CO LTD7 citations83
US9087590B2Jul 21, 2015
Nonvolatile memory device and method of programming the same
SAMSUNG ELECTRONICS CO LTD6 citations82
US10629267B2Apr 21, 2020
Nonvolatile memory device and method of programming in the same
SAMSUNG ELECTRONICS CO LTD8 citations81
US10366769B2Jul 30, 2019
Nonvolatile memory device and programming method for fast and slow cells thereof
SAMSUNG ELECTRONICS CO LTD7 citations79
US12040020B2Jul 16, 2024
Memory device, method of operating the same, and method of operating storage device including the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US11238942B2Feb 1, 2022
Nonvolatile memory devices
SAMSUNG ELECTRONICS CO LTD2 citations73
US11211403B2Dec 28, 2021
Nonvolatile memory device having a vertical structure and a memory system including the same
SAMSUNG ELECTRONICS CO LTD2 citations73
US10978481B2Apr 13, 2021
Nonvolatile memory device having a vertical structure and a memory system including the same
SAMSUNG ELECTRONICS CO LTD4 citations73
US10700079B2Jun 30, 2020
Nonvolatile memory device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD4 citations73
US10553291B2Feb 4, 2020
Nonvolatile memory device and operating method thereof
SAMSUNG ELECTRONICS CO LTD5 citations73
US10152380B2Dec 11, 2018
Memory device, memory system, and method of operating memory device
SAMSUNG ELECTRONICS CO LTD6 citations73
US10030895B2Jul 24, 2018
Magnetic regenerator unit and magnetic cooling system with the same
SAMSUNG ELECTRONICS CO LTD4 citations73
US11756613B2Sep 12, 2023
Nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD1 citations72
US10665312B2May 26, 2020
Nonvolatile memory device configured to adjust a read parameter based on a degradation level
SAMSUNG ELECTRONICS CO LTD3 citations72
US10614889B2Apr 7, 2020
Nonvolatile memory device and method of performing an erase operation in the same
SAMSUNG ELECTRONICS CO LTD2 citations72
US10482973B2Nov 19, 2019
Memory devices including a word line defect detection circuit
SAMSUNG ELECTRONICS CO LTD2 citations72
US9899097B2Feb 20, 2018
Nonvolatile memory device and method of programming the same
SAMSUNG ELECTRONICS CO LTD3 citations72
US11056193B2Jul 6, 2021
Non-volatile memory devices having enhanced erase control circuits therein
SAMSUNG ELECTRONICS CO LTD2 citations71
US10902922B2Jan 26, 2021
Nonvolatile memory device storing data in sub-blocks and operating method thereof
SAMSUNG ELECTRONICS CO LTD5 citations71
US10854250B2Dec 1, 2020
Memory device including a circuit for detecting word line defect and operating method thereof
SAMSUNG ELECTRONICS CO LTD4 citations71
US10892015B2Jan 12, 2021
Nonvolatile memory device and method of programming in the same
SAMSUNG ELECTRONICS CO LTD3 citations70
US11081186B2Aug 3, 2021
Non-volatile memory device and erasing method of the same
SAMSUNG ELECTRONICS CO LTD2 citations69
US10176881B2Jan 8, 2019
Non-volatile memory devices having temperature and location dependent word line operating voltages
SAMSUNG ELECTRONICS CO LTD3 citations67
US8982618B2Mar 17, 2015
Nonvolatile memory device and related method of operation
SAMSUNG ELECTRONICS CO LTD2 citations63
US12165721B2Dec 10, 2024
Nonvolatile memory device and operation method of detecting defective memory cells
SAMSUNG ELECTRONICS CO LTD0 citations62
US11574692B2Feb 7, 2023
Nonvolatile memory device and operation method of detecting defective memory cells
SAMSUNG ELECTRONICS CO LTD0 citations62
US11233068B2Jan 25, 2022
Nonvolatile memory device having a vertical structure and a memory system including the same
SAMSUNG ELECTRONICS CO LTD0 citations62
US11127472B2Sep 21, 2021
Memory device for changing pass voltage
SAMSUNG ELECTRONICS CO LTD1 citations62
US10607705B2Mar 31, 2020
Memory device including a deterioration level detection circuit
SAMSUNG ELECTRONICS CO LTD1 citations62
US9406383B2Aug 2, 2016
Non-volatile memory device and method of programming the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US12469552B2Nov 11, 2025
Nonvolatile memory device, operation method of a nonvolatile memory device, and operation method of a controller
SAMSUNG ELECTRONICS CO LTD0 citations61
US11437094B2Sep 6, 2022
Nonvolatile memory device, storage device, and operation method of storage device
SAMSUNG ELECTRONICS CO LTD0 citations61
US10910080B2Feb 2, 2021
Nonvolatile memory device configured to adjust a read parameter based on degradation level
SAMSUNG ELECTRONICS CO LTD1 citations61
US10748617B2Aug 18, 2020
Nonvolatile memory device and method of operating the same
SAMSUNG ELECTRONICS CO LTD1 citations61
US10332607B2Jun 25, 2019
Methods of operating a nonvolatile memory device and the nonvolatile memory device thereof
SAMSUNG ELECTRONICS CO LTD1 citations61
US9299445B2Mar 29, 2016
Nonvolatile memory device and method of operating the same
SAMSUNG ELECTRONICS CO LTD2 citations61
PARK BYUNG GOOK
1 patentCHUNG YOUNG-KI
1 patentPARK IL HAN
1 patentSEOUL NAT UNIV IND FOUNDATION
1 patentShowing the top 50 of 64 patents by PatentIndex Score.