Inventor
PAN HSIEN-YU
TW33 patents
⚠️ This page may combine multiple inventors who share the name “PAN HSIEN-YU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
29 patentsUS11074966B2Jul 27, 2021
Method and system to balance ground bounce
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US11018142B2May 25, 2021
Memory cell and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations84
US10734066B2Aug 4, 2020
Static random access memory with write assist circuit
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US9886996B2Feb 6, 2018
SRAM cell for interleaved wordline scheme
TAIWAN SEMICONDUCTOR MFG CO LTD8 citations84
US12029023B2Jul 2, 2024
Memory array circuit and method of manufacturing same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11657870B2May 23, 2023
Method and system to balance ground bounce
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11637108B2Apr 25, 2023
Memory array circuit and method of manufacturing same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10770131B2Sep 8, 2020
SRAM cell for interleaved wordline scheme
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10714181B2Jul 14, 2020
Memory cell
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10276231B2Apr 30, 2019
SRAM cell for interleaved wordline scheme
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10276579B2Apr 30, 2019
Layout design for manufacturing a memory cell
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US12408316B2Sep 2, 2025
Memory array circuit and method of manufacturing same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12586635B2Mar 24, 2026
Static random access memory with write assist circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12100436B2Sep 24, 2024
Method and system to balance ground bounce
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12074156B2Aug 27, 2024
Memory array circuit and method of manufacturing same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11948627B2Apr 2, 2024
Static random access memory with write assist circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11769533B2Sep 26, 2023
Semiconductor chip having memory and logic cells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11423977B2Aug 23, 2022
Static random access memory with write assist circuit
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11322198B2May 3, 2022
Multi word line assertion
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11176997B2Nov 16, 2021
Memory cell
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11062739B2Jul 13, 2021
Semiconductor chip having memory and logic cells
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10971217B2Apr 6, 2021
SRAM cell for interleaved wordline scheme
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10964683B2Mar 30, 2021
Memory array circuit and method of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10964389B2Mar 30, 2021
Memory cell
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10943667B2Mar 9, 2021
Memory device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US10892008B2Jan 12, 2021
Multi word line assertion
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10832765B2Nov 10, 2020
Variation tolerant read assist circuit for SRAM
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9853035B2Dec 26, 2017
Layout scheme and method for forming device cells in semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10510739B2Dec 17, 2019
Method of providing layout design of SRAM cell
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations42