Inventor
DUNKLEY JAMES L
6 patents
Patents
6 patentsUS4393575AJul 19, 1983
Process for manufacturing a JFET with an ion implanted stabilization layer
NAT SEMICONDUCTOR CORP30 citations92
US4155777AMay 22, 1979
Zener diode incorporating an ion implanted layer establishing the breakdown point below the surface
NAT SEMICONDUCTOR CORP22 citations80
US4079402AMar 14, 1978
Zener diode incorporating an ion implanted layer establishing the breakdown point below the surface
NAT SEMICONDUCTOR CORP20 citations80
US3971059AJul 20, 1976
Complementary bipolar transistors having collector diffused isolation
NAT SEMICONDUCTOR CORP32 citations78
US4496963AJan 29, 1985
Semiconductor device with an ion implanted stabilization layer
NAT SEMICONDUCTOR CORP13 citations73
US3958267AMay 18, 1976
Current scaling in lateral pnp structures
NAT SEMICONDUCTOR CORP16 citations72