Inventor
INUJIMA TAKASHI
JP32 patents
Patents
32 patentsUS5183511AFeb 2, 1993
Photo CVD apparatus with a glow discharge system
SEMICONDUCTOR ENERGY LAB532 citations99
US4986213AJan 22, 1991
Semiconductor manufacturing device
SEMICONDUCTOR ENERGY LAB121 citations99
US4888305ADec 19, 1989
Method for photo annealing non-single crystalline semiconductor films
SEMICONDUCTOR ENERGY LAB131 citations99
US4691995ASep 8, 1987
Liquid crystal filling device
SEMICONDUCTOR ENERGY LAB501 citations98
US5296405AMar 22, 1994
Method for photo annealing non-single crystalline semiconductor films
SEMICONDUCTOR ENERGY LAB100 citations96
US4978203ADec 18, 1990
Liquid crystal device with an apparent hysteresis
SEMICONDUCTOR ENERGY LAB61 citations96
US4926791AMay 22, 1990
Microwave plasma apparatus employing helmholtz coils and ioffe bars
SEMICONDUCTOR ENERGY LAB67 citations96
US4799776AJan 24, 1989
Ferroelectric liquid crystal display device having a single polarizer
SEMICONDUCTOR ENERGY LAB67 citations96
US5176789AJan 5, 1993
Method for depositing material on depressions
SEMICONDUCTOR ENERGY LAB41 citations93
US5084130AJan 28, 1992
Method for depositing material on depressions
SEMICONDUCTOR ENERGY LAB25 citations93
US4861622AAug 29, 1989
Method for forming a film coat on the inside of a depression
SEMICONDUCTOR ENERGY LAB26 citations93
US6423383B1Jul 23, 2002
Plasma processing apparatus and method
SEMICONDUCTOR ENERGY LAB14 citations92
US6217661B1Apr 17, 2001
Plasma processing apparatus and method
SEMICONDUCTOR ENERGY LAB16 citations92
US5203959AApr 20, 1993
Microwave plasma etching and deposition method employing first and second magnetic fields
SEMICONDUCTOR ENERGY LAB50 citations92
US5196954AMar 23, 1993
Liquid crystal display
SEMICONDUCTOR ENERGY LAB32 citations92
US5171710ADec 15, 1992
Method for photo annealing non-single crystalline semiconductor films
SEMICONDUCTOR ENERGY LAB41 citations92
US4861143AAug 29, 1989
Liquid crystal display capable of displaying grey tone
SEMICONDUCTOR ENERGY LAB48 citations92
US5079615AJan 7, 1992
Capacitor for a semiconductor
SEMICONDUCTOR ENERGY LAB15 citations82
US4735821AApr 5, 1988
Method for depositing material on depressions
SEMICONDUCTOR ENERGY LAB21 citations82
US5858259AJan 12, 1999
Plasma processing apparatus and method
SEMICONDUCTOR ENERGY LAB7 citations74
US5685913ANov 11, 1997
Plasma processing apparatus and method
SEMICONDUCTOR ENERGY LAB4 citations74
US5462767AOct 31, 1995
CVD of conformal coatings over a depression using alkylmetal precursors
SEMICONDUCTOR ENERGY LAB14 citations74
US5353140AOct 4, 1994
Liquid crystal display
SEMICONDUCTOR ENERGY LAB6 citations74
US5109292AApr 28, 1992
Liquid crystal device having resin layer formed between adjacent active elements
SEMICONDUCTOR ENERGY LAB12 citations74
US5069531ADec 3, 1991
Liquid crystal device having asymmetrical opposed contiguous surfaces being driven by a unipolar driving source
SEMICONDUCTOR ENERGY LAB8 citations74
US4949004AAug 14, 1990
Gas discharge lamp having temperature controlled, liquid reservoir for liquified portion of gas
SEMICONDUCTOR ENERGY LAB10 citations73
US4910044AMar 20, 1990
Ultraviolet light emitting device and application thereof
SEMICONDUCTOR ENERGY LAB11 citations72
US6838126B2Jan 4, 2005
Method for forming I-carbon film
SEMICONDUCTOR ENERGY LAB2 citations63
US6677001B1Jan 13, 2004
Microwave enhanced CVD method and apparatus
SEMICONDUCTOR ENERGY LAB5 citations63
US4995706AFeb 26, 1991
Liquid crystal device with a ferroelectric thin film
SEMICONDUCTOR ENERGY LAB6 citations63
US4768464ASep 6, 1988
Chemical vapor reaction apparatus
SEMICONDUCTOR ENERGY LAB4 citations63
US4803095AFeb 7, 1989
Chemical vapor reaction process by virtue of uniform irradiation
SEMICONDUCTOR ENERGY LAB0 citations52