Inventor · disambiguated record
Aaron A. Budrevich
Also filed as: BUDREVICH AARON · BUDREVICH AARON A
21 granted patents·7 pending applications·86 citations·filing 2005–2024
93Inventor score
Top patents by PatentIndex Score
28 records- 0197US8748940B1Semiconductor devices with germanium-rich active layers and doped transition layersRACHMADY WILLY·Filed 2012·Granted Jun 10, 2014·35 cites·20 claims
- 0294US7601980B2Dopant confinement in the delta doped layer using a dopant segregation barrier in quantum well structuresINTEL CORP·Filed 2006·Granted Oct 13, 2009·24 cites·18 claims
- 0388US9583487B2Semiconductor device having metallic source and drain regionsGILES MARTIN D·Filed 2011·Granted Feb 28, 2017·10 cites·23 claims
- 0481US11735630B2Integrated circuit structures with source or drain dopant diffusion blocking layersINTEL CORP·Filed 2019·Granted Aug 22, 2023·2 cites·20 claims
- 0579US9159787B2Semiconductor devices with germanium-rich active layers and doped transition layersRACHMADY WILLY·Filed 2014·Granted Oct 13, 2015·2 cites·13 claims
- 0676US12342611B2Source or drain structures with vertical trenchesINTEL CORP·Filed 2024·Granted Jun 24, 2025·0 cites·20 claims
- 0776US8222746B2Noble metal barrier layersLAVOIE ADRIEN R·Filed 2006·Granted Jul 17, 2012·5 cites·25 claims
- 0875US9691848B2Semiconductor devices with germanium-rich active layers and doped transition layersINTEL CORP·Filed 2016·Granted Jun 27, 2017·1 cites·20 claims
- 0971US11935887B2Source or drain structures with vertical trenchesINTEL CORP·Filed 2019·Granted Mar 19, 2024·1 cites·16 claims
- 1071US2023343826A1Integrated circuit structures with source or drain dopant diffusion blocking layersINTEL CORP·Filed 2023·Application pending·0 cites
- 1166US8394694B2Reliability of high-K gate dielectric layersLAVOIE ADRIEN R·Filed 2007·Granted Mar 12, 2013·3 cites·12 claims
- 1263US8258627B2Group II element alloys for protecting metal interconnectsBUDREVICH AARON A·Filed 2010·Granted Sep 4, 2012·2 cites·20 claims
- 1361US10008565B2Semiconductor devices with germanium-rich active layers and doped transition layersINTEL CORP·Filed 2017·Granted Jun 26, 2018·0 cites·10 claims
- 1460US2024186127A1Sputter targets for self-doped source and drain contactsINTEL CORP·Filed 2023·Application pending·0 cites
- 1559US7759241B2Group II element alloys for protecting metal interconnectsINTEL CORP·Filed 2006·Granted Jul 20, 2010·1 cites·8 claims
- 1658US11264453B2Methods of doping fin structures of non-planar transistor devicesINTEL CORP·Filed 2019·Granted Mar 1, 2022·0 cites·19 claims
- 1758US9490329B2Semiconductor devices with germanium-rich active layers and doped transition layersINTEL CORP·Filed 2015·Granted Nov 8, 2016·0 cites·8 claims
- 1858US7790536B2Dopant confinement in the delta doped layer using a dopant segregration barrier in quantum well structuresINTEL CORP·Filed 2009·Granted Sep 7, 2010·0 cites·8 claims
- 1954US2023420246A1Sputter targets and sources for self-doped source and drain contactsINTEL CORP·Filed 2022·Application pending·0 cites
- 2053US7842983B2Boundaries with elevated deuterium levelsINTEL CORP·Filed 2008·Granted Nov 30, 2010·0 cites·7 claims
- 2151US10847653B2Semiconductor device having metallic source and drain regionsINTEL CORP·Filed 2017·Granted Nov 24, 2020·0 cites·9 claims
- 2251US2007207611A1Noble metal precursors for copper barrier and seed layerLAVOIE ADRIEN R·Filed 2006·Application pending·0 cites
- 2350US11222947B2Methods of doping fin structures of non-planar transistor devicesINTEL CORP·Filed 2015·Granted Jan 11, 2022·0 cites·17 claims
- 2447US2023420574A1Mobility improvement in gate all around transistors based on substrate orientationINTEL CORP·Filed 2022·Application pending·0 cites
- 2544US2010148153A1Group III-V devices with delta-doped layer under channel regionHUDAIT MANTU K·Filed 2008·Application pending·0 cites
- 2643US10896907B2Retrograde transistor doping by heterojunction materialsINTEL CORP·Filed 2016·Granted Jan 19, 2021·0 cites·18 claims
- 2742US10896852B2Methods for doping a sub-fin region of a semiconductor fin structure and devices containing the sameINTEL CORP·Filed 2015·Granted Jan 19, 2021·0 cites·25 claims
- 2840US2007063279A1Insulation layer for silicon-on-insulator waferTOLCHINSKY PETER G·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →