Inventor · disambiguated record
Aaron K. Oki
Also filed as: OKI AARON K · OKI AARON KENJI
19 granted patents·374 citations·filing 1991–2001
96Inventor score
Top patents by PatentIndex Score
19 records- 0181US6465289B1Method of fabricating monolithic multifunction integrated circuit devicesTRW INC·Filed 1996·Granted Oct 15, 2002·52 cites·15 claims
- 0278US6680494B2Ultra high speed heterojunction bipolar transistor having a cantilevered baseNORTHROP GRUMMAN CORP·Filed 2001·Granted Jan 20, 2004·28 cites·4 claims
- 0378US5323138AReliable thin film resistors for integrated circuit applicationsTRW INC·Filed 1992·Granted Jun 21, 1994·31 cites·20 claims
- 0476US6376867B1Heterojunction bipolar transistor with reduced thermal resistanceTRW INC·Filed 2000·Granted Apr 23, 2002·22 cites·20 claims
- 0571US5838031ALow noise-high linearity HEMT-HBT compositeTRW INC·Filed 1996·Granted Nov 17, 1998·33 cites·33 claims
- 0669US6072371AQuenchable VCO for switched band synthesizer applicationsTRW INC·Filed 1997·Granted Jun 6, 2000·20 cites·9 claims
- 0769US5162243AMethod of producing high reliability heterojunction bipolar transistorsTRW INC·Filed 1991·Granted Nov 10, 1992·29 cites·15 claims
- 0866US5631477AQuaternary collector InAlAs-InGaAlAs heterojunction bipolar transistorTRW INC·Filed 1995·Granted May 20, 1997·28 cites·17 claims
- 0965US5672522AMethod for making selective subcollector heterojunction bipolar transistorsTRW INC·Filed 1996·Granted Sep 30, 1997·30 cites·7 claims
- 1059US5448087AHeterojunction bipolar transistor with graded base dopingTRW INC·Filed 1992·Granted Sep 5, 1995·19 cites·5 claims
- 1153US5840612AMethod of fabricating very high gain heterojunction bipolar transistorsTRW INC·Filed 1997·Granted Nov 24, 1998·15 cites·14 claims
- 1249US5736417AMethod of fabricating double photoresist layer self-aligned heterojunction bipolar transistorTRW INC·Filed 1996·Granted Apr 7, 1998·11 cites·10 claims
- 1348US5648666ADouble-epitaxy heterojunction bipolar transistors for high speed performanceTRW INC·Filed 1994·Granted Jul 15, 1997·18 cites·9 claims
- 1447US5930636AMethod of fabricating high-frequency GaAs substrate-based Schottky barrier diodesTRW INC·Filed 1996·Granted Jul 27, 1999·10 cites·15 claims
- 1545US5262335AMethod to produce complementary heterojunction bipolar transistorsTRW INC·Filed 1991·Granted Nov 16, 1993·12 cites·6 claims
- 1644US5986517ALow-loss air suspended radially combined patch for N-way RF switchTRW INC·Filed 1998·Granted Nov 16, 1999·6 cites·6 claims
- 1736US6037646AHigh-frequency GaAs substrate based schottky barrier diodesTRW INC·Filed 1997·Granted Mar 14, 2000·4 cites·5 claims
- 1834US5892248ADouble photoresist layer self-aligned heterojuction bipolar transistorTRW INC·Filed 1996·Granted Apr 6, 1999·3 cites·6 claims
- 1931US6528829B1Integrated circuit structure having a charge injection barrierTRW INC·Filed 1999·Granted Mar 4, 2003·3 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →