Inventor · disambiguated record
Abdallah Ougazzaden
Also filed as: OUGAZZADEN ABDALLAH
20 granted patents·5 pending applications·283 citations·filing 1996–2020
94Inventor score
Files withTRIQUINT TECHNOLOGY HOLDING CO11FRANCE TELECOM2AGERE SYST GUARDIAN CORP1AGERE SYST OPTOELECTRONICS1AGERE SYSTEMS INC1
Top patents by PatentIndex Score
25 records- 0191US6664605B1Dopant diffusion blocking for optoelectronic devices using InAlAs and/or InGaAlAsTRIQUINT TECHNOLOGY HOLDING CO·Filed 2000·Granted Dec 16, 2003·33 cites·52 claims
- 0288US5680411AIntegrated monolithic laser-modulator component with multiple quantum well structureFRANCE TELECOM·Filed 1996·Granted Oct 21, 1997·99 cites·11 claims
- 0382US6556605B1Method and device for preventing zinc/iron interaction in a semiconductor laserTRIQUENT TECHNOLOGY HOLDING CO·Filed 2000·Granted Apr 29, 2003·25 cites·35 claims
- 0479US6706542B1Application of InAIAs double-layer to block dopant out-diffusion in III-V device FabricationTRIQUINT TECHNOLOGY HOLDING CO·Filed 2000·Granted Mar 16, 2004·23 cites·33 claims
- 0577US6437372B1Diffusion barrier spikes for III-V structuresAGERE SYST GUARDIAN CORP·Filed 2000·Granted Aug 20, 2002·40 cites·8 claims
- 0675US6503768B2Method for monolithic integration of multiple devices on an optoelectronic substrateAGERE SYSTEMS INC·Filed 2001·Granted Jan 7, 2003·13 cites·20 claims
- 0774US6376272B1InA1As etch stop layer for precise semiconductor waveguide fabricationLUCENT TECHNOLOGIES INC·Filed 2000·Granted Apr 23, 2002·16 cites·25 claims
- 0867US6895134B2Integrated optoelectronics devicesTRIQUINT TECHNOLOGY HOLDING CO·Filed 2001·Granted May 17, 2005·11 cites·16 claims
- 0960US6819695B1Dopant diffusion barrier layer for use in III-V structuresTRIQUINT TECHNOLOGY HOLDING CO·Filed 2000·Granted Nov 16, 2004·7 cites·20 claims
- 1049US7084044B2Optoelectronic device and method of manufacture thereofTRIQUINT TECHNOLOGY HOLDING CO·Filed 2004·Granted Aug 1, 2006·2 cites·13 claims
- 1149US6771869B2Optoelectronic device having a barrier layer associated therewith and a method of manufacture thereofTRIQUINT TECHNOLOGY HOLDING CO·Filed 2002·Granted Aug 3, 2004·2 cites·17 claims
- 1248US12155005B2Method for large scale growth and fabrication of III-nitride devices on 2D-layered H-BN without spontaneous delaminationGEORGIA TECH RES INST·Filed 2020·Granted Nov 26, 2024·0 cites·25 claims
- 1347US7008805B2Optical device and method of manufacture thereofTRIQUINT TECHNOLOGY HOLDING CO·Filed 2003·Granted Mar 7, 2006·2 cites·18 claims
- 1446US6828592B2Optoelectronic device and method of manufacture thereofTRIQUINT TECHNOLOGY HOLDING CO·Filed 2002·Granted Dec 7, 2004·1 cites·6 claims
- 1546US6607933B2Double layer beam expander for device-to-fiber couplingAGERE SYST OPTOELECTRONICS·Filed 2001·Granted Aug 19, 2003·2 cites·9 claims
- 1643US11187671B2Detection sensor having a sensor cell with a high-electron mobility transistor and ring resonator(s)CENTRE NAT RECH SCIENT·Filed 2017·Granted Nov 30, 2021·0 cites·10 claims
- 1743US2004213313A1Dopant diffusion blocking for optoelectronic devices using InAIAs or InGaAIAsFiled 2004·Application pending·0 cites
- 1841US2003209771A1Dopant diffusion blocking for optoelectronic devices using InAlAs or InGaAlAsFiled 2003·Application pending·0 cites
- 1939US11408322B2Detection sensor comprising a selective high-electron-mobility transistor for detecting a gaseous or liquid componentPSA AUTOMOBILES SA·Filed 2017·Granted Aug 9, 2022·0 cites·10 claims
- 2038US2004005112A1Electronic device having a diffusion barrier region including aluminum and a method of manufacture thereforTRIQUINT TECHNOLOGY HOLDING CO·Filed 2003·Application pending·0 cites
- 2137US6635502B1Method of manufacturing semiconductor optical devicesTRIQUINT TECHNOLOGY HOLDING CO·Filed 2000·Granted Oct 21, 2003·0 cites·7 claims
- 2237US6141363AOptical semiconductor light guide device having a low divergence emergent beam, application to fabry-perot and distributed feedback lasersFRANCE TELECOM·Filed 1997·Granted Oct 31, 2000·7 cites·15 claims
- 2335US2002090167A1Electronic device having a barrier region including aluminum and a method of manufacture thereforFiled 2001·Application pending·0 cites
- 2434US6780241B2Monolithic optical device manufacturing and integration methodsTRIQUINT TECHNOLOGY HOLDING CO·Filed 2002·Granted Aug 24, 2004·0 cites·20 claims
- 2533US2014327012A1Hemt transistors consisting of (iii-b)-n wide bandgap semiconductors comprising boronOUGAZZADEN ABDALLAH·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →