Inventor · disambiguated record
Abderrahmane Salmi
Also filed as: SALMI ABDERRAHMANE
2 granted patents·326 citations·filing 1999–2002
71Inventor score
Technology areasH10D
Files withAPPLIED MICRO CIRCUITS CORP2
Top patents by PatentIndex Score
2 records- 0195US6531369B1Heterojunction bipolar transistor (HBT) fabrication using a selectively deposited silicon germanium (SiGe)APPLIED MICRO CIRCUITS CORP·Filed 2002·Granted Mar 11, 2003·296 cites·14 claims
- 0266US6559020B1Bipolar device with silicon germanium (SiGe) base regionAPPLIED MICRO CIRCUITS CORP·Filed 1999·Granted May 6, 2003·30 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →