Inventor · disambiguated record
Adolf Schöner
Also filed as: SCHOENER ADOLF · SCHONER ADOLF · SCHÖNER ADOLF
22 granted patents·3 pending applications·194 citations·filing 1996–2024
94Inventor score
Top patents by PatentIndex Score
25 records- 0193US11581431B2Integration of a Schottky diode with a MOSFETII VI DELAWARE INC·Filed 2021·Granted Feb 14, 2023·2 cites·19 claims
- 0288US11996330B2Crystal efficient SiC device wafer productionASCATRON AB·Filed 2020·Granted May 28, 2024·2 cites·18 claims
- 0388US11652099B2Concept for silicon for carbide power devicesII VI DELAWARE INC·Filed 2022·Granted May 16, 2023·1 cites·22 claims
- 0487US6104043ASchottky diode of SiC and a method for production thereofABB RESEARCH LTD·Filed 1997·Granted Aug 15, 2000·94 cites·10 claims
- 0586US11575007B2Feeder design with high current capabilityII VI DELAWARE INC·Filed 2021·Granted Feb 7, 2023·1 cites·16 claims
- 0685US11276681B2Concept for silicon carbide power devicesII VI DELAWARE INC·Filed 2018·Granted Mar 15, 2022·3 cites·30 claims
- 0785US11114557B2Integration of a Schottky diode with a MOSFETII VI DELAWARE INC·Filed 2018·Granted Sep 7, 2021·3 cites·21 claims
- 0883US11444192B2MOSFET in sic with self-aligned lateral MOS channelASCATRON AB·Filed 2019·Granted Sep 13, 2022·3 cites·20 claims
- 0981US12249630B2Method for manufacturing a gridII VI DELAWARE INC·Filed 2023·Granted Mar 11, 2025·0 cites·20 claims
- 1078US12476149B2Crystal efficient SiC device wafer productionII VI ADVANCED MAT LLC·Filed 2024·Granted Nov 18, 2025·0 cites·15 claims
- 1178US12034001B2Concept for silicon carbide power devicesII VI DELAWARE INC·Filed 2023·Granted Jul 9, 2024·0 cites·20 claims
- 1277US11984497B2Integration of a Schottky diode with a MOSFETII VI DELAWARE INC·Filed 2023·Granted May 14, 2024·0 cites·15 claims
- 1377US11869940B2Feeder design with high current capabilityII VI DELAWARE INC·Filed 2023·Granted Jan 9, 2024·0 cites·21 claims
- 1477US2024321868A1Concept for silicon carbide power devicesII VI ADVANCED MAT LLC·Filed 2024·Application pending·0 cites
- 1575US11876116B2Method for manufacturing a gridII VI DELAWARE INC·Filed 2022·Granted Jan 16, 2024·0 cites·16 claims
- 1674US11342423B2Method for manufacturing a gridII VI DELAWARE INC·Filed 2018·Granted May 24, 2022·1 cites·27 claims
- 1773US11158706B2Feeder design with high current capabilityII VI DELAWARE INC·Filed 2018·Granted Oct 26, 2021·1 cites·25 claims
- 1869US11923450B2MOSFET in SiC with self-aligned lateral MOS channelII VI DELAWARE INC·Filed 2022·Granted Mar 5, 2024·0 cites·20 claims
- 1968US5759263ADevice and a method for epitaxially growing objects by cvdABB RESEARCH LTD·Filed 1996·Granted Jun 2, 1998·25 cites·22 claims
- 2060US6703294B1Method for producing a region doped with boron in a SiC-layerCREE INC·Filed 1996·Granted Mar 9, 2004·24 cites·5 claims
- 2154US2024355938A1Buried Grid Double Junction Barrier Schottky Diode and Method of MakingII VI DELAWARE INC·Filed 2023·Application pending·0 cites
- 2251US5705406AMethod for producing a semiconductor device having semiconductor layers of SiC by the use of an ion-implantation techniqueABB RESEARCH LTD·Filed 1996·Granted Jan 6, 1998·15 cites·15 claims
- 2350US5902117APN-diode of SiC and a method for production thereofABB RESEARCH LTD·Filed 1997·Granted May 11, 1999·13 cites·15 claims
- 2443US2015287818A1Semiconductor structureIND TECH RES INST·Filed 2014·Application pending·0 cites
- 2537US5674765AMethod for producing a semiconductor device by the use of an implanting stepABB RESEARCH LTD·Filed 1996·Granted Oct 7, 1997·6 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →