Inventor · disambiguated record
Akihiko Furukawa
Also filed as: FURUKAWA AKIHIKO
56 granted patents·7 pending applications·1,465 citations·filing 1980–2022
98Inventor score
Top patents by PatentIndex Score
63 records- 0198US5527417APhoto-assisted CVD apparatusTOSHIBA KK·Filed 1995·Granted Jun 18, 1996·807 cites·12 claims
- 0297US4895107APhoto chemical reaction apparatusTOSHIBA KK·Filed 1988·Granted Jan 23, 1990·152 cites·12 claims
- 0395US5622567AThin film forming apparatus using laserMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Apr 22, 1997·147 cites·3 claims
- 0491US8785931B2Semiconductor deviceKINOUCHI SHINICHI·Filed 2011·Granted Jul 22, 2014·23 cites·18 claims
- 0590US8716717B2Semiconductor device and method for manufacturing the sameKAWAKAMI TSUYOSHI·Filed 2011·Granted May 6, 2014·12 cites·15 claims
- 0690US6144072ASemiconductor device formed on insulating layer and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Nov 7, 2000·68 cites·13 claims
- 0789US9006819B2Power semiconductor device and method for manufacturing sameHINO SHIRO·Filed 2011·Granted Apr 14, 2015·14 cites·18 claims
- 0888US6110291AThin film forming apparatus using laserMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Aug 29, 2000·67 cites·3 claims
- 0985US6509583B1Semiconductor device formed on insulating layer and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jan 21, 2003·20 cites·3 claims
- 1083US10192978B2Semiconductor apparatusMITSUBISHI ELECTRIC CORP·Filed 2016·Granted Jan 29, 2019·4 cites·12 claims
- 1182US8134408B2Power amplification circuit having transformerKAWAKAMI TSUYOSHI·Filed 2009·Granted Mar 13, 2012·8 cites·6 claims
- 1280US10192977B2Power semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Jan 29, 2019·3 cites·9 claims
- 1379US6653656B2Semiconductor device formed on insulating layer and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2003·Granted Nov 25, 2003·13 cites·4 claims
- 1478US9614029B2Trench-gate type semiconductor device and manufacturing method thereforMITSUBISHI ELECTRIC CORP·Filed 2015·Granted Apr 4, 2017·2 cites·16 claims
- 1578US9224860B2Trench-gate type semiconductor device and manufacturing method thereforKAGAWA YASUHIRO·Filed 2011·Granted Dec 29, 2015·5 cites·17 claims
- 1678US8093950B2Power amplifier having transformerFURUKAWA AKIHIKO·Filed 2009·Granted Jan 10, 2012·10 cites·5 claims
- 1777US8492836B2Power semiconductor deviceMIURA NARUHISA·Filed 2009·Granted Jul 23, 2013·7 cites·15 claims
- 1877US8330544B2Power amplification circuit having transformerKAWAKAMI TSUYOSHI·Filed 2012·Granted Dec 11, 2012·4 cites·7 claims
- 1976US9202940B2Semiconductor deviceKAWAKAMI TSUYOSHI·Filed 2012·Granted Dec 1, 2015·4 cites·13 claims
- 2076US9093361B2Semiconductor deviceHINO SHIRO·Filed 2012·Granted Jul 28, 2015·5 cites·12 claims
- 2174US9536942B2Semiconductor device having a plurality of electric field relaxation layers and method for manufacturing sameKAWAKAMI TSUYOSHI·Filed 2012·Granted Jan 3, 2017·3 cites·10 claims
- 2272US11901444B2Method for manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2022·Granted Feb 13, 2024·0 cites·2 claims
- 2371US9985093B2Trench-gate type semiconductor device and manufacturing method thereforMITSUBISHI ELECTRIC CORP·Filed 2017·Granted May 29, 2018·1 cites·11 claims
- 2469US9525057B2Semiconductor deviceMIURA NARUHISA·Filed 2013·Granted Dec 20, 2016·2 cites·17 claims
- 2568US9508792B2Semiconductor device including an electric field buffer layer and method for manufacturing sameMITSUBISHI ELECTRIC CORP·Filed 2013·Granted Nov 29, 2016·2 cites·19 claims
- 2667US9496344B2Semiconductor device including well regions with different impurity densitiesTANAKA RINA·Filed 2013·Granted Nov 15, 2016·3 cites·9 claims
- 2767US9111751B2Silicon carbide semiconductor device and method of fabricating sameFURUKAWA AKIHIKO·Filed 2011·Granted Aug 18, 2015·2 cites·6 claims
- 2867US8779855B2Power amplification circuit having transformerRENESAS ELECTRONICS CORP·Filed 2013·Granted Jul 15, 2014·2 cites·4 claims
- 2967US8461927B2Power amplification circuit having transformerRENESAS ELECTRONICS CORP·Filed 2012·Granted Jun 11, 2013·2 cites·4 claims
- 3067US8314658B2Power amplifierKAWAKAMI TSUYOSHI·Filed 2010·Granted Nov 20, 2012·3 cites·9 claims
- 3165US5905286ASemiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1997·Granted May 18, 1999·18 cites·15 claims
- 3264US8969960B2Power semiconductor deviceFURUKAWA AKIHIKO·Filed 2012·Granted Mar 3, 2015·2 cites·4 claims
- 3363US9293572B2Power semiconductor deviceFURUKAWA AKIHIKO·Filed 2010·Granted Mar 22, 2016·2 cites·16 claims
- 3460US11349020B2Semiconductor device and semiconductor device manufacturing methodMITSUBISHI ELECTRIC CORP·Filed 2020·Granted May 31, 2022·0 cites·6 claims
- 3558US7001822B2Semiconductor device formed on insulating layer and method of manufacturing the sameRENESAS TECH CORP·Filed 2003·Granted Feb 21, 2006·3 cites·36 claims
- 3658US4367492ASolid state image sensorTOKYO SHIBAURA ELECTRIC CO·Filed 1980·Granted Jan 4, 1983·12 cites·9 claims
- 3757US11699744B2Semiconductor device and semiconductor apparatusMITSUBISHI ELECTRIC CORP·Filed 2021·Granted Jul 11, 2023·0 cites·57 claims
- 3857US9190468B2Semiconductor deviceHINO SHIRO·Filed 2012·Granted Nov 17, 2015·1 cites·9 claims
- 3957US4404738AMethod of fabricating an I2 L element and a linear transistor on one chipTOKYO SHIBAURA ELECTRIC CO·Filed 1981·Granted Sep 20, 1983·14 cites·4 claims
- 4056US10734506B2Semiconductor device and semiconductor device manufacturing methodMITSUBISHI ELECTRIC CORP·Filed 2019·Granted Aug 4, 2020·0 cites·5 claims
- 4155US12243795B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2022·Granted Mar 4, 2025·0 cites·16 claims
- 4255US11398563B2Semiconductor device and method for manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2018·Granted Jul 26, 2022·0 cites·8 claims
- 4354US10892352B2Power semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2018·Granted Jan 12, 2021·0 cites·10 claims
- 4454US2023253345A1Semiconductor device, power conversion apparatus, and method for manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2022·Application pending·0 cites
- 4553US12328887B2Semiconductor device and method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2021·Granted Jun 10, 2025·0 cites·48 claims
- 4653US12142605B2Semiconductor device and method for manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2022·Granted Nov 12, 2024·0 cites·14 claims
- 4753US2006086934A1Semiconductor device formed on insulating layer and method of manufacturing the sameRENESAS TECHNOLOGY INC·Filed 2005·Application pending·0 cites
- 4852US6734509B2Semiconductor integrated circuitMITSUBISHI ELECTRIC CORP·Filed 2002·Granted May 11, 2004·5 cites·16 claims
- 4951US12402337B2Semiconductor device and method for controlling semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2022·Granted Aug 26, 2025·0 cites·18 claims
- 5051US2022302289A1Semiconductor device and method for manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2022·Application pending·0 cites
Showing the top 50 of 63 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →