Inventor · disambiguated record
Akira Goda
Also filed as: GODA AKIRA
297 granted patents·60 pending applications·3,311 citations·filing 2000–2025
99Inventor score
Files withMICRON TECHNOLOGY INC239TOSHIBA KK45GODA AKIRA30LODESTAR LICENSING GROUP LLC18INTEL CORP11
Top patents by PatentIndex Score
357 records- 0199US9741737B1Integrated structures comprising vertical channel material and having conductively-doped semiconductor material directly against lower sidewalls of the channel materialMICRON TECHNOLOGY INC·Filed 2016·Granted Aug 22, 2017·105 cites·8 claims
- 0299US7292476B2Programming method for NAND EEPROMMICRON TECHNOLOGY INC·Filed 2005·Granted Nov 6, 2007·126 cites·51 claims
- 0399US7006379B2Semiconductor memoryTOSHIBA KK·Filed 2005·Granted Feb 28, 2006·171 cites·7 claims
- 0498US12100454B2Memory device including in-tier driver circuitMICRON TECHNOLOGY INC·Filed 2022·Granted Sep 24, 2024·2 cites·35 claims
- 0598US11545456B2Microelectronic devices, electronic systems having a memory array region and a control logic region, and methods of forming microelectronic devicesMICRON TECHNOLOGY INC·Filed 2020·Granted Jan 3, 2023·14 cites·25 claims
- 0698US11282815B2Methods of forming microelectronic devices, and related microelectronic devices and electronic systemsMICRON TECHNOLOGY INC·Filed 2020·Granted Mar 22, 2022·14 cites·11 claims
- 0798US10985251B2Apparatuses including memory cells with gaps comprising low dielectric constant materialsMICRON TECHNOLOGY INC·Filed 2020·Granted Apr 20, 2021·5 cites·15 claims
- 0898US10340286B2Methods of forming NAND memory arraysMICRON TECHNOLOGY INC·Filed 2018·Granted Jul 2, 2019·22 cites·18 claims
- 0998US9853046B2Apparatuses and methods for forming multiple decks of memory cellsMICRON TECHNOLOGY INC·Filed 2016·Granted Dec 26, 2017·19 cites·11 claims
- 1098US9728266B1Memory device including multiple select gates and different bias conditionsMICRON TECHNOLOGY INC·Filed 2016·Granted Aug 8, 2017·38 cites·21 claims
- 1198US7057936B2Nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 2004·Granted Jun 6, 2006·179 cites·20 claims
- 1298US6925009B2Semiconductor memoryTOSHIBA KK·Filed 2004·Granted Aug 2, 2005·130 cites·17 claims
- 1398US6894931B2Nonvolatile semiconductor memory deviceTOSHIBA KK·Filed 2003·Granted May 17, 2005·140 cites·36 claims
- 1497US10418379B2Integrated structures comprising channel material extending into source materialMICRON TECHNOLOGY INC·Filed 2018·Granted Sep 17, 2019·12 cites·12 claims
- 1597US10134597B2Apparatuses including memory cells with gaps comprising low dielectric constant materialsMICRON TECHNOLOGY INC·Filed 2017·Granted Nov 20, 2018·14 cites·20 claims
- 1697US9941298B2Methods of forming integrated structures comprising vertical channel material and having conductively-doped semiconductor material directly against lower sidewalls of the channel materialMICRON TECHNOLOGY INC·Filed 2017·Granted Apr 10, 2018·14 cites·8 claims
- 1797US9679778B2Methods of forming memory cells with air gaps and other low dielectric constant materialsMICRON TECHNOLOGY INC·Filed 2016·Granted Jun 13, 2017·15 cites·24 claims
- 1897US9343316B2Methods of forming memory cells with air gaps and other low dielectric constant materialsMICRON TECHNOLOGY INC·Filed 2015·Granted May 17, 2016·16 cites·21 claims
- 1997US9064577B2Apparatuses and methods to control body potential in memory operationsMICRON TECHNOLOGY INC·Filed 2012·Granted Jun 23, 2015·22 cites·19 claims
- 2097US7724577B2NAND with back biased operationMICRON TECHNOLOGY INC·Filed 2008·Granted May 25, 2010·51 cites·17 claims
- 2197US7245534B2Nonvolatile semiconductor memoryTOSHIBA KK·Filed 2005·Granted Jul 17, 2007·63 cites·18 claims
- 2297US7184356B2Semiconductor memory deviceTOSHIBA KK·Filed 2005·Granted Feb 27, 2007·64 cites·17 claims
- 2397US6870773B2Data writing method for semiconductor memory device and semiconductor memory deviceTOSHIBA KK·Filed 2004·Granted Mar 22, 2005·112 cites·18 claims
- 2497US6819592B2Semiconductor memoryTOSHIBA KK·Filed 2002·Granted Nov 16, 2004·129 cites·8 claims
- 2596US11410949B2Memory devices with backside bond pads under a memory arrayMICRON TECHNOLOGY INC·Filed 2020·Granted Aug 9, 2022·3 cites·17 claims
- 2696US9536618B2Apparatuses and methods to control body potential in memory operationsMICRON TECHNOLOGY INC·Filed 2015·Granted Jan 3, 2017·22 cites·20 claims
- 2796US9378839B2Apparatus and methods including source gatesMICRON TECHNOLOGY INC·Filed 2014·Granted Jun 28, 2016·15 cites·18 claims
- 2896US9362300B2Apparatuses and methods for forming multiple decks of memory cellsMICRON TECHNOLOGY INC·Filed 2014·Granted Jun 7, 2016·21 cites·23 claims
- 2996US8797806B2Apparatus and methods including source gatesGODA AKIRA·Filed 2011·Granted Aug 5, 2014·22 cites·25 claims
- 3096US7916543B2Memory cell operationMICRON TECHNOLOGY INC·Filed 2007·Granted Mar 29, 2011·41 cites·9 claims
- 3196US7883964B2Nonvolatile semiconductor memory and a fabrication method thereofTOSHIBA KK·Filed 2008·Granted Feb 8, 2011·40 cites·15 claims
- 3296US7359274B2Semiconductor memory deviceTOSHIBA KK·Filed 2007·Granted Apr 15, 2008·33 cites·17 claims
- 3395US11569266B2Integrated structures comprising vertical channel material and having conductively-doped semiconductor material directly against lower sidewalls of the channel materialMICRON TECHNOLOGY INC·Filed 2021·Granted Jan 31, 2023·2 cites·7 claims
- 3495US11288160B2Threshold voltage distribution adjustment for bufferMICRON TECHNOLOGY INC·Filed 2020·Granted Mar 29, 2022·4 cites·20 claims
- 3595US10651282B2Apparatuses including memory cells with gaps comprising low dielectric constant materialsMICRON TECHNOLOGY INC·Filed 2018·Granted May 12, 2020·7 cites·16 claims
- 3695US9786375B2Multiple blocks per string in 3D NAND memoryINTEL CORP·Filed 2015·Granted Oct 10, 2017·17 cites·15 claims
- 3795US9184175B2Floating gate memory cells in vertical memoryMICRON TECHNOLOGY INC·Filed 2013·Granted Nov 10, 2015·15 cites·8 claims
- 3895US7430693B2Data memory systemTOSHIBA KK·Filed 2005·Granted Sep 30, 2008·42 cites·20 claims
- 3995US6958938B2Data writing method for semiconductor memory device and semiconductor memory deviceTOSHIBA KK·Filed 2004·Granted Oct 25, 2005·78 cites·20 claims
- 4095US6720612B2Semiconductor deviceTOSHIBA KK·Filed 2002·Granted Apr 13, 2004·75 cites·44 claims
- 4194US11289163B2Multi-decks memory device including inter-deck switchesMICRON TECHNOLOGY INC·Filed 2020·Granted Mar 29, 2022·3 cites·15 claims
- 4294US10937482B2Memory cells and arrays of elevationally-extending strings of memory cellsMICRON TECHNOLOGY INC·Filed 2019·Granted Mar 2, 2021·10 cites·13 claims
- 4394US9991273B2Floating gate memory cells in vertical memoryMICRON TECHNOLOGY INC·Filed 2017·Granted Jun 5, 2018·8 cites·21 claims
- 4494US9793282B2Floating gate memory cells in vertical memoryMICRON TECHNOLOGY INC·Filed 2015·Granted Oct 17, 2017·9 cites·19 claims
- 4594US9136128B2Methods and apparatuses including memory cells with air gaps and other low dielectric constant materialsLEE MINSOO·Filed 2011·Granted Sep 15, 2015·18 cites·25 claims
- 4694US9041090B2Methods for forming a string of memory cells and apparatuses having a vertical string of memory cells including metalMICRON TECHNOLOGY INC·Filed 2013·Granted May 26, 2015·15 cites·19 claims
- 4794US8951865B2Memory arrays where a distance between adjacent memory cells at one end of a substantially vertical portion is greater than a distance between adjacent memory cells at an opposing end of the substantially vertical portion and formation thereofMICRON TECHNOLOGY INC·Filed 2013·Granted Feb 10, 2015·16 cites·21 claims
- 4894US8750040B2Memory devices having source lines directly coupled to body regions and methodsGODA AKIRA·Filed 2011·Granted Jun 10, 2014·13 cites·16 claims
- 4994US7099190B2Data storage systemTOSHIBA KK·Filed 2004·Granted Aug 29, 2006·88 cites·17 claims
- 5093US12079517B2Buffer allocation for reducing block transit penaltyMICRON TECHNOLOGY INC·Filed 2022·Granted Sep 3, 2024·2 cites·20 claims
Showing the top 50 of 357 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →