Inventor · disambiguated record
Akiyoshi Hatada
Also filed as: HATADA AKIYOSHI
35 granted patents·2 pending applications·421 citations·filing 1991–2016
98Inventor score
Files withFUJITSU LTD10FUJITSU SEMICONDUCTOR LTD8FUJITSU MICROELECTRONICS LTD6SHIMAMUNE YOSUKE5SOCIONEXT INC3
Top patents by PatentIndex Score
37 records- 0198US7667227B2Semiconductor device and fabrication method thereofFUJITSU MICROELECTRONICS LTD·Filed 2009·Granted Feb 23, 2010·77 cites·4 claims
- 0296US8853673B2Semiconductor device and fabrication method thereofFUJITSU SEMICONDUCTOR LTD·Filed 2013·Granted Oct 7, 2014·15 cites·4 claims
- 0394US9112027B2Semiconductor device and fabrication method thereofFUJITSU SEMICONDUCTOR LTD·Filed 2014·Granted Aug 18, 2015·9 cites·18 claims
- 0494US7875521B2Semiconductor device and production method thereofFUJITSU SEMICONDUCTOR LTD·Filed 2009·Granted Jan 25, 2011·23 cites·6 claims
- 0594US7791064B2Semiconductor device and fabrication method thereofFUJITSU SEMICONDUCTOR LTD·Filed 2005·Granted Sep 7, 2010·18 cites·10 claims
- 0693US7378305B2Semiconductor integrated circuit and fabrication process thereofFUJITSU LTD·Filed 2005·Granted May 27, 2008·27 cites·9 claims
- 0793US7202120B2Semiconductor integrated circuit device and fabrication process thereofFUJITSU LTD·Filed 2005·Granted Apr 10, 2007·23 cites·4 claims
- 0891US7579617B2Semiconductor device and production method thereofFUJITSU MICROELECTRONICS LTD·Filed 2005·Granted Aug 25, 2009·18 cites·11 claims
- 0988US8466450B2Semiconductor device and fabrication method thereofSHIMAMUNE YOSUKE·Filed 2010·Granted Jun 18, 2013·6 cites·7 claims
- 1088US7816766B2Semiconductor device with compressive and tensile stressesFUJITSU SEMICONDUCTOR LTD·Filed 2005·Granted Oct 19, 2010·16 cites·12 claims
- 1187US7683362B2Semiconductor device and production method thereofFUJITSU MICROELECTRONICS LTD·Filed 2006·Granted Mar 23, 2010·13 cites·19 claims
- 1286US7626215B2Semiconductor device and method of manufacturing the sameFUJITSU MICROELECTRONICS LTD·Filed 2006·Granted Dec 1, 2009·9 cites·12 claims
- 1386US7262465B2P-channel MOS transistor and fabrication process thereofFUJITSU LTD·Filed 2005·Granted Aug 28, 2007·13 cites·7 claims
- 1485US7518188B2P-channel MOS transistor and fabrication process thereofFUJITSU MICROELECTRONICS LTD·Filed 2005·Granted Apr 14, 2009·10 cites·9 claims
- 1583US7968414B2Semiconductor device and production method thereofFUJITSU SEMICONDUCTOR LTD·Filed 2010·Granted Jun 28, 2011·6 cites·9 claims
- 1683US6693002B2Semiconductor device and its manufactureFUJITSU LTD·Filed 2002·Granted Feb 17, 2004·27 cites·9 claims
- 1780US6586794B2Semiconductor device and its manufactureFUJITSU LTD·Filed 2001·Granted Jul 1, 2003·23 cites·14 claims
- 1878US9865734B2Semiconductor device and fabrication method thereofSOCIONEXT INC·Filed 2016·Granted Jan 9, 2018·1 cites·21 claims
- 1973US7883960B2Method of manufacturing semiconductor deviceFUJITSU SEMICONDUCTOR LTD·Filed 2009·Granted Feb 8, 2011·5 cites·7 claims
- 2072US8952535B2Semiconductor transistor device with barrier interconnectsFUJITSU SEMICONDUCTOR LTD·Filed 2013·Granted Feb 10, 2015·3 cites·12 claims
- 2171US5202908AShift registerMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Apr 13, 1993·24 cites·12 claims
- 2270US8164085B2Semiconductor device and production method thereofSHIMAMUNE YOSUKE·Filed 2010·Granted Apr 24, 2012·2 cites·15 claims
- 2367US8207042B2Semiconductor device and method of manufacturing the sameSHIMAMUNE YOSUKE·Filed 2009·Granted Jun 26, 2012·2 cites·11 claims
- 2466US8518785B2Semiconductor device and method of manufacturing the sameSHIMAMUNE YOSUKE·Filed 2012·Granted Aug 27, 2013·1 cites·8 claims
- 2565US8278177B2Semiconductor device and method of manufacturing the sameSHIMAMUNE YOSUKE·Filed 2011·Granted Oct 2, 2012·1 cites·8 claims
- 2665US5272389ALevel shifter circuitMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Dec 21, 1993·18 cites·12 claims
- 2763US7476941B2Semiconductor integrated circuit device and fabrication process thereofFUJITSU MICROELECTRONICS LTD·Filed 2007·Granted Jan 13, 2009·2 cites·12 claims
- 2862US9577098B2Semiconductor device and fabrication method thereofSOCIONEXT INC·Filed 2016·Granted Feb 21, 2017·0 cites·19 claims
- 2960US9401427B2Semiconductor device and fabrication method thereofSOCIONEXT INC·Filed 2015·Granted Jul 26, 2016·0 cites·18 claims
- 3051US8158498B2P-channel MOS transistor and fabrication process thereofSHIMA MASASHI·Filed 2009·Granted Apr 17, 2012·0 cites·6 claims
- 3150US5763325AFabrication process of a semiconductor device using a slurry containing manganese oxideFUJITSU LTD·Filed 1996·Granted Jun 9, 1998·13 cites·12 claims
- 3244US5877089ASlurry containing manganese oxideFUJITSU LTD·Filed 1998·Granted Mar 2, 1999·9 cites·5 claims
- 3340US2007126036A1Semiconductor device and semiconductor device manufacturing methodFUJITSU LTD·Filed 2006·Application pending·0 cites
- 3439US8575704B2Semiconductor device and manufacturing method of the semiconductor deviceHANEDA MASAKI·Filed 2012·Granted Nov 5, 2013·0 cites·14 claims
- 3538US6159858ASlurry containing manganese oxide and a fabrication process of a semiconductor device using such a slurryFUJITSU LTD·Filed 1997·Granted Dec 12, 2000·7 cites·25 claims
- 3638US2006202278A1Semiconductor integrated circuit and cmos transistorFUJITSU LTD·Filed 2005·Application pending·0 cites
- 3732US9812497B2Method for manufacturing magnetic storage device, and magnetic storage deviceHATADA AKIYOSHI·Filed 2011·Granted Nov 7, 2017·0 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →