Inventor · disambiguated record
Akihiko Ishibashi
Also filed as: ISHIBASHI AKIHIKO
70 granted patents·15 pending applications·1,210 citations·filing 1994–2024
99Inventor score
Files withMATSUSHITA ELECTRIC INDUSTRIAL CO LTD46PANASONIC CORP18PANASONIC IP MAN CO LTD11PANASONIC HOLDINGS CORP2TOSHIBA KK2
Top patents by PatentIndex Score
85 records- 0196US6720586B1Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, nitride semiconductor device, semiconductor light emitting device and method of fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Apr 13, 2004·98 cites·4 claims
- 0294US5787104ASemiconductor light emitting element and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1996·Granted Jul 28, 1998·75 cites·7 claims
- 0393US7501667B2Nitride semiconductor light-emitting devicePANASONIC CORP·Filed 2005·Granted Mar 10, 2009·16 cites·14 claims
- 0492US6614059B1Semiconductor light-emitting device with quantum wellMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Sep 2, 2003·91 cites·5 claims
- 0591US5751013ASemiconductor light-emitting device and production method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted May 12, 1998·72 cites·11 claims
- 0690US7160748B2Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Jan 9, 2007·13 cites·11 claims
- 0788US6861672B2Semiconductor light emitting element and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Mar 1, 2005·18 cites·18 claims
- 0887US7551237B2Television receiver having dual power circuitsTOSHIBA KK·Filed 2005·Granted Jun 23, 2009·16 cites·15 claims
- 0986US7030417B2Semiconductor light emitting device and fabrication method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Apr 18, 2006·30 cites·8 claims
- 1085US7846820B2Nitride semiconductor device and process for producing the samePANASONIC CORP·Filed 2005·Granted Dec 7, 2010·10 cites·13 claims
- 1184US7368766B2Semiconductor light emitting element and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted May 6, 2008·12 cites·10 claims
- 1283US6030849AMethods of manufacturing semiconductor, semiconductor device and semiconductor substrateMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Feb 29, 2000·66 cites·23 claims
- 1383US5923950AMethod of manufacturing a semiconductor light-emitting deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Jul 13, 1999·55 cites·10 claims
- 1482US7338827B2Nitride semiconductor laser and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Mar 4, 2008·16 cites·5 claims
- 1582US7221037B2Method of manufacturing group III nitride substrate and semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted May 22, 2007·15 cites·7 claims
- 1682US6586774B2Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Jul 1, 2003·21 cites·6 claims
- 1781US6911351B2Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, nitride semiconductor device, semiconductor light emitting device and method of fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Jun 28, 2005·22 cites·87 claims
- 1881US6326638B1Semiconductor light emitting element and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Dec 4, 2001·32 cites·4 claims
- 1980US10350725B2RAMO4 substrate and manufacturing method thereofPANASONIC IP MAN CO LTD·Filed 2017·Granted Jul 16, 2019·1 cites·10 claims
- 2080US8981340B2Nitride semiconductor device and production method thereofPANASONIC CORP·Filed 2013·Granted Mar 17, 2015·2 cites·8 claims
- 2180US6806109B2Method of fabricating nitride based semiconductor substrate and method of fabricating nitride based semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Oct 19, 2004·22 cites·22 claims
- 2279US7470608B2Semiconductor light emitting device and fabrication method thereofPANASONIC CORP·Filed 2006·Granted Dec 30, 2008·5 cites·9 claims
- 2379US6858877B2Nitride semiconductor, method for manufacturing the same and nitride semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Feb 22, 2005·22 cites·13 claims
- 2479US5923690ASemiconductor laser deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Jul 13, 1999·50 cites·23 claims
- 2578US7704860B2Nitride-based semiconductor device and method for fabricating the samePANASONIC CORP·Filed 2005·Granted Apr 27, 2010·6 cites·9 claims
- 2677US7176115B2Method of manufacturing Group III nitride substrate and semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Feb 13, 2007·19 cites·58 claims
- 2777US6867112B1Method of fabricating nitride semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Mar 15, 2005·17 cites·3 claims
- 2876US6165812AGallium nitride compound semiconductor light emitting device and process for producing gallium nitride compound semiconductorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Dec 26, 2000·70 cites·25 claims
- 2974US6777253B2Method for fabricating semiconductor, method for fabricating semiconductor substrate, and semiconductor light emitting deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Aug 17, 2004·16 cites·11 claims
- 3073US6764871B2Method for fabricating a nitride semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Jul 20, 2004·15 cites·11 claims
- 3172US6611005B2Method for producing semiconductor and semiconductor laser deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Aug 26, 2003·17 cites·2 claims
- 3272US6133058AFabrication of semiconductor light-emitting deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Oct 17, 2000·27 cites·3 claims
- 3371US2025087971A1Nitride light-emitting elementPANASONIC HOLDINGS CORP·Filed 2024·Application pending·0 cites
- 3470US6544869B1Method and apparatus for depositing semiconductor film and method for fabricating semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Apr 8, 2003·8 cites·8 claims
- 3570US5895225ASemiconductor light-emitting device and production method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Apr 20, 1999·25 cites·6 claims
- 3669US6855571B1Method of producing GaN-based semiconductor laser device and semiconductor substrate used thereforMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Feb 15, 2005·12 cites·5 claims
- 3769US6667185B2Method of fabricating nitride semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Dec 23, 2003·10 cites·7 claims
- 3869US6136626ASemiconductor light-emitting device and production method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Oct 24, 2000·34 cites·8 claims
- 3967US9899213B2Group III nitride semiconductor, and method for producing samePANASONIC CORP·Filed 2017·Granted Feb 20, 2018·1 cites·12 claims
- 4067US8222670B2Semiconductor light emitting element and method for manufacturing sameANZUE NAOMI·Filed 2011·Granted Jul 17, 2012·1 cites·4 claims
- 4167US8030677B2Semiconductor light emitting element and method for manufacturing samePANASONIC CORP·Filed 2007·Granted Oct 4, 2011·2 cites·1 claims
- 4265US9671182B2Copper alloy tube for heat exchanger excellent in fracture strengthTAKAGI TOSHIAKI·Filed 2008·Granted Jun 6, 2017·1 cites·3 claims
- 4365US6940100B2Group III-V nitride semiconductor light-emitting device which allows for efficient injection of electrons into an active layerMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Sep 6, 2005·11 cites·9 claims
- 4465US6466597B1Semiconductor laser deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Oct 15, 2002·27 cites·21 claims
- 4564US7524691B2Method of manufacturing group III nitride substratePANASONIC CORP·Filed 2004·Granted Apr 28, 2009·8 cites·25 claims
- 4663US11437773B2Wavelength conversion devicePANASONIC IP MAN CO LTD·Filed 2020·Granted Sep 6, 2022·0 cites·6 claims
- 4763US8018134B2Light source, optical pickup, and electronic apparatusPANASONIC CORP·Filed 2008·Granted Sep 13, 2011·1 cites·20 claims
- 4862US6072762AOptical disk recording/reproducing method and apparatus for preventing wave length shift during recording and reproducing operationsMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Jun 6, 2000·15 cites·6 claims
- 4961US6927149B2Nitride semiconductor device and fabrication method thereof, and method for forming nitride semiconductor substrateMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Aug 9, 2005·7 cites·28 claims
- 5061US6518082B1Method for fabricating nitride semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Feb 11, 2003·23 cites·11 claims
Showing the top 50 of 85 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →