Inventor · disambiguated record
Akira Kamisawa
Also filed as: KAMISAWA AKIRA
12 granted patents·4 pending applications·271 citations·filing 1992–2009
92Inventor score
Top patents by PatentIndex Score
16 records- 0188US6232242B1Method of forming a crystalline insulation layer on a silicon substrateROHM CO LTD·Filed 1999·Granted May 15, 2001·98 cites·8 claims
- 0275US6683012B2Method for epitaxially growing crystalline insulation layer on crystalline silicon substrate while simultaneously growing silicon oxide, nitride, or oxynitrideROHM CO LTD·Filed 2002·Granted Jan 27, 2004·16 cites·4 claims
- 0374US5271797AMethod for patterning metal oxide thin filmROHM CO LTD·Filed 1992·Granted Dec 21, 1993·60 cites·9 claims
- 0462US2010022673A1Proton-conductive film, fuel cell comprising the same and method for producing the sameROHM CO LTD·Filed 2009·Application pending·0 cites
- 0561US5627013AMethod of forming a fine pattern of ferroelectric filmROHM CO LTD·Filed 1992·Granted May 6, 1997·28 cites·17 claims
- 0655US6245451B1Ferroelectric material, method of manufacturing the same, semiconductor memory, and method of manufacturing the sameROHM CO LTD·Filed 1997·Granted Jun 12, 2001·23 cites·13 claims
- 0753US2007037032A1Proton-conductive film, fuel cell comprising the same, and method for producing the sameUNIV OSAKA·Filed 2006·Application pending·0 cites
- 0852US6086665ASolution for forming ferroelectric film and method for forming ferroelectric filmROHM CO LTD·Filed 1998·Granted Jul 11, 2000·17 cites·4 claims
- 0946US7947365B2Mesoporous thin film and method of producing the sameROHM CO LTD·Filed 2005·Granted May 24, 2011·0 cites·5 claims
- 1046US5291436AFerroelectric memory with multiple-value storage statesROHM CO LTD·Filed 1992·Granted Mar 1, 1994·11 cites·3 claims
- 1144US5846686AAgent for forming a fine pattern of ferroelectric film, and method of forming a fine pattern of ferroelectric filmROHM CO LTD·Filed 1997·Granted Dec 8, 1998·9 cites·6 claims
- 1240US2006263660A1Proton conductive membrane, method for producing same, and fuel cell comprising sameTAKAOKA MASAKI·Filed 2004·Application pending·0 cites
- 1338US6013334AMethod for forming a thin film of a complex compoundROHM CO LTD·Filed 1997·Granted Jan 11, 2000·7 cites·14 claims
- 1437US2001024885A1Substrate for semiconductor device and method of manufacturing the sameROHM CO LTD·Filed 2001·Application pending·0 cites
- 1536US6485779B1Solution for forming ferroelectric film and method for forming ferroelectric filmROHM CO LTD·Filed 2000·Granted Nov 26, 2002·0 cites·4 claims
- 1629US6055176AMemory device with processing functionROHM CO LTD·Filed 1999·Granted Apr 25, 2000·2 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →