Inventor · disambiguated record
Akira Katakami
Also filed as: KATAKAMI AKIRA
30 granted patents·4 pending applications·334 citations·filing 2005–2016
97Inventor score
Files withFUJITSU SEMICONDUCTOR LTD9FUJITSU MICROELECTRONICS LTD8FUJITSU LTD5SHIMAMUNE YOSUKE5SOCIONEXT INC3
Top patents by PatentIndex Score
34 records- 0198US7667227B2Semiconductor device and fabrication method thereofFUJITSU MICROELECTRONICS LTD·Filed 2009·Granted Feb 23, 2010·77 cites·4 claims
- 0296US8853673B2Semiconductor device and fabrication method thereofFUJITSU SEMICONDUCTOR LTD·Filed 2013·Granted Oct 7, 2014·15 cites·4 claims
- 0395US7649232B2P-channel MOS transistor, semiconductor integrated circuit device and fabrication process thereofFUJITSU MICROELECTRONICS LTD·Filed 2005·Granted Jan 19, 2010·37 cites·13 claims
- 0494US9112027B2Semiconductor device and fabrication method thereofFUJITSU SEMICONDUCTOR LTD·Filed 2014·Granted Aug 18, 2015·9 cites·18 claims
- 0594US7875521B2Semiconductor device and production method thereofFUJITSU SEMICONDUCTOR LTD·Filed 2009·Granted Jan 25, 2011·23 cites·6 claims
- 0694US7791064B2Semiconductor device and fabrication method thereofFUJITSU SEMICONDUCTOR LTD·Filed 2005·Granted Sep 7, 2010·18 cites·10 claims
- 0793US7378305B2Semiconductor integrated circuit and fabrication process thereofFUJITSU LTD·Filed 2005·Granted May 27, 2008·27 cites·9 claims
- 0893US7202120B2Semiconductor integrated circuit device and fabrication process thereofFUJITSU LTD·Filed 2005·Granted Apr 10, 2007·23 cites·4 claims
- 0991US7579617B2Semiconductor device and production method thereofFUJITSU MICROELECTRONICS LTD·Filed 2005·Granted Aug 25, 2009·18 cites·11 claims
- 1088US8466450B2Semiconductor device and fabrication method thereofSHIMAMUNE YOSUKE·Filed 2010·Granted Jun 18, 2013·6 cites·7 claims
- 1188US7816766B2Semiconductor device with compressive and tensile stressesFUJITSU SEMICONDUCTOR LTD·Filed 2005·Granted Oct 19, 2010·16 cites·12 claims
- 1287US7683362B2Semiconductor device and production method thereofFUJITSU MICROELECTRONICS LTD·Filed 2006·Granted Mar 23, 2010·13 cites·19 claims
- 1386US7626215B2Semiconductor device and method of manufacturing the sameFUJITSU MICROELECTRONICS LTD·Filed 2006·Granted Dec 1, 2009·9 cites·12 claims
- 1486US7262465B2P-channel MOS transistor and fabrication process thereofFUJITSU LTD·Filed 2005·Granted Aug 28, 2007·13 cites·7 claims
- 1585US7518188B2P-channel MOS transistor and fabrication process thereofFUJITSU MICROELECTRONICS LTD·Filed 2005·Granted Apr 14, 2009·10 cites·9 claims
- 1683US7968414B2Semiconductor device and production method thereofFUJITSU SEMICONDUCTOR LTD·Filed 2010·Granted Jun 28, 2011·6 cites·9 claims
- 1778US9865734B2Semiconductor device and fabrication method thereofSOCIONEXT INC·Filed 2016·Granted Jan 9, 2018·1 cites·21 claims
- 1870US8164085B2Semiconductor device and production method thereofSHIMAMUNE YOSUKE·Filed 2010·Granted Apr 24, 2012·2 cites·15 claims
- 1967US9728468B2Semiconductor device and manufacturing method thereofFUJITSU SEMICONDUCTOR LTD·Filed 2015·Granted Aug 8, 2017·1 cites·5 claims
- 2067US8207042B2Semiconductor device and method of manufacturing the sameSHIMAMUNE YOSUKE·Filed 2009·Granted Jun 26, 2012·2 cites·11 claims
- 2166US8518785B2Semiconductor device and method of manufacturing the sameSHIMAMUNE YOSUKE·Filed 2012·Granted Aug 27, 2013·1 cites·8 claims
- 2265US8278177B2Semiconductor device and method of manufacturing the sameSHIMAMUNE YOSUKE·Filed 2011·Granted Oct 2, 2012·1 cites·8 claims
- 2364US8421155B2Semiconductor device and method of manufacturing semiconductor deviceKATAKAMI AKIRA·Filed 2011·Granted Apr 16, 2013·2 cites·16 claims
- 2463US7476941B2Semiconductor integrated circuit device and fabrication process thereofFUJITSU MICROELECTRONICS LTD·Filed 2007·Granted Jan 13, 2009·2 cites·12 claims
- 2562US9577098B2Semiconductor device and fabrication method thereofSOCIONEXT INC·Filed 2016·Granted Feb 21, 2017·0 cites·19 claims
- 2662US8786022B2Semiconductor device and semiconductor device manufacturing methodKATAKAMI AKIRA·Filed 2011·Granted Jul 22, 2014·2 cites·11 claims
- 2760US9401427B2Semiconductor device and fabrication method thereofSOCIONEXT INC·Filed 2015·Granted Jul 26, 2016·0 cites·18 claims
- 2851US9257425B2Semiconductor device and manufacturing method thereofFUJITSU SEMICONDUCTOR LTD·Filed 2014·Granted Feb 9, 2016·0 cites·5 claims
- 2951US8158498B2P-channel MOS transistor and fabrication process thereofSHIMA MASASHI·Filed 2009·Granted Apr 17, 2012·0 cites·6 claims
- 3043US2009075477A1Method of manufacturing semiconductor deviceFUJITSU MICROELECTRONICS LTD·Filed 2008·Application pending·0 cites
- 3143US2014051222A1Method of manufacturing semiconductor deviceFUJITSU SEMICONDUCTOR LTD·Filed 2013·Application pending·0 cites
- 3240US2007126036A1Semiconductor device and semiconductor device manufacturing methodFUJITSU LTD·Filed 2006·Application pending·0 cites
- 3339US8575704B2Semiconductor device and manufacturing method of the semiconductor deviceHANEDA MASAKI·Filed 2012·Granted Nov 5, 2013·0 cites·14 claims
- 3438US2006202278A1Semiconductor integrated circuit and cmos transistorFUJITSU LTD·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →