Inventor · disambiguated record
Akitaka Kimura
Also filed as: KIMURA AKITAKA
22 granted patents·3 pending applications·430 citations·filing 1976–2019
96Inventor score
Top patents by PatentIndex Score
25 records- 0186US4057090APuncture sealing pneumatic tireSUMITOMO RUBBER IND·Filed 1976·Granted Nov 8, 1977·58 cites·2 claims
- 0284US6028877AGallium nitride based semiconductor laser with an improved aluminum gallium nitride cladding layer disposed between an active region and a substrateNEC CORP·Filed 1997·Granted Feb 22, 2000·60 cites·84 claims
- 0383US6100106AFabrication of nitride semiconductor light-emitting deviceNEC CORP·Filed 1998·Granted Aug 8, 2000·88 cites·12 claims
- 0481US4262624AMethod of forming puncture preventing layer for tire and apparatus employed thereforSUMITOMO RUBBER IND·Filed 1978·Granted Apr 21, 1981·30 cites·3 claims
- 0577US5843227ACrystal growth method for gallium nitride filmsNEC CORP·Filed 1997·Granted Dec 1, 1998·32 cites·9 claims
- 0676US6420198B1Gallium nitride based compound semiconductor laser and method of forming the sameNEC CORP·Filed 2000·Granted Jul 16, 2002·24 cites·39 claims
- 0774US11789589B2Information processing apparatus and information processing method for dividing display screen for display of plurality of applicationsSONY GROUP CORP·Filed 2019·Granted Oct 17, 2023·2 cites·19 claims
- 0870US7314672B2Semiconductor layer formed by selective deposition and method for depositing semiconductor layerNEC CORP·Filed 2004·Granted Jan 1, 2008·9 cites·9 claims
- 0968US4356214AMethod of forming puncture preventing layer for tire and apparatus employed thereforSUMITOMO RUBBER IND·Filed 1980·Granted Oct 26, 1982·18 cites·8 claims
- 1061US6201823B1Gallium nitride based compound semiconductor laser and method of forming the sameNEC CORP·Filed 1997·Granted Mar 13, 2001·23 cites·102 claims
- 1158US5425042ARefractive index control optical semiconductor deviceNEC CORP·Filed 1994·Granted Jun 13, 1995·17 cites·5 claims
- 1256US7655485B2Semiconductor layer formed by selective deposition and method for depositing semiconductor layerNEC CORP·Filed 2007·Granted Feb 2, 2010·0 cites·10 claims
- 1355US10061472B2Information terminal, information presentation method for an information terminal, and information presentation programOHMORI KENTA·Filed 2009·Granted Aug 28, 2018·1 cites·12 claims
- 1453US2014289671A1Information terminal, information presentation method for an information terminal, and information presentation programSONY MOBILE COMM AB·Filed 2014·Application pending·0 cites
- 1552US6096130AMethod of crystal growth of a GaN layer over a GaAs substrateNEC CORP·Filed 1997·Granted Aug 1, 2000·17 cites·17 claims
- 1651US5963787AMethod of producing gallium nitride semiconductor light emitting deviceNEC CORP·Filed 1998·Granted Oct 5, 1999·17 cites·5 claims
- 1748US9449237B2Information terminal, information control method for an information terminal, and information control programYAGI DAICHI·Filed 2009·Granted Sep 20, 2016·2 cites·16 claims
- 1846US6887726B2Semiconductor layer formed by selective deposition and method for depositing semiconductor layerNEC CORP·Filed 1998·Granted May 3, 2005·9 cites·16 claims
- 1945US6033490AGrowth of GaN layers on quartz substratesNEC CORP·Filed 1998·Granted Mar 7, 2000·11 cites·25 claims
- 2042US7479448B2Method of manufacturing a light emitting device with a doped active layerNEC CORP·Filed 2003·Granted Jan 20, 2009·1 cites·4 claims
- 2141US7741654B2Group III nitride semiconductor optical deviceNEC CORP·Filed 2005·Granted Jun 22, 2010·0 cites·7 claims
- 2239US2021185162A1Information processing device and information processing methodSONY CORP·Filed 2018·Application pending·0 cites
- 2338US5559820AMultiple quantum well semiconductor laserNEC CORP·Filed 1995·Granted Sep 24, 1996·8 cites·7 claims
- 2433US5825053AHeterostructure III-V nitride semiconductor device including InP substrateNEC CORP·Filed 1997·Granted Oct 20, 1998·3 cites·3 claims
- 2530US2002048302A1Gallium nitride semiconductor laser and a manufacturing process thereofFiled 1998·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →