Inventor · disambiguated record
Akira Kuroyanagi
Also filed as: KUROYANAGI AKIRA · OKABE YOSHIFUMI
43 granted patents·1 pending application·1,379 citations·filing 1987–2009
98Inventor score
Top patents by PatentIndex Score
44 records- 0197US5877095AMethod of fabricating a semiconductor device having a silicon nitride film made of silane, ammonia and nitrogenNIPPON DENSO CO·Filed 1996·Granted Mar 2, 1999·577 cites·6 claims
- 0294US4975390AMethod of fabricating a semiconductor pressure sensorNIPPON DENSO CO·Filed 1987·Granted Dec 4, 1990·125 cites·14 claims
- 0392US8076718B2Insulated gate semiconductor device and method for producing the sameTAKAYA HIDEFUMI·Filed 2005·Granted Dec 13, 2011·34 cites·8 claims
- 0491US7586151B2Insulated gate semiconductor deviceTOYOTA MOTOR CO LTD·Filed 2005·Granted Sep 8, 2009·23 cites·7 claims
- 0590US6469345B2Semiconductor device and method for manufacturing the sameDENSO CORP·Filed 2001·Granted Oct 22, 2002·55 cites·18 claims
- 0688US5017979AEEPROM semiconductor memory deviceNIPPON DENSO CO·Filed 1989·Granted May 21, 1991·41 cites·7 claims
- 0779US5689130AVertical semiconductor device with ground surface providing a reduced ON resistanceNIPPON DENSO CO·Filed 1995·Granted Nov 18, 1997·32 cites·51 claims
- 0879US5654560ASemiconductor device with current detecting function and method of producing the sameNIPPON DENSO CO·Filed 1995·Granted Aug 5, 1997·40 cites·21 claims
- 0979US5250449AVertical type semiconductor device and method for producing the sameNIPPON DENSO CO·Filed 1991·Granted Oct 5, 1993·45 cites·9 claims
- 1079US5242862ASemiconductor device and method of manufacturing sameNIPPON DENSO CO·Filed 1991·Granted Sep 7, 1993·38 cites·14 claims
- 1177US7470953B2Insulated gate type semiconductor device and manufacturing method thereofTOYOTA MOTOR CO LTD·Filed 2004·Granted Dec 30, 2008·25 cites·20 claims
- 1277US5470771AMethod of manufacturing a floating gate memory deviceNIPPON DENSO CO·Filed 1991·Granted Nov 28, 1995·32 cites·14 claims
- 1376US6946711B2Semiconductor deviceDENSO CORP·Filed 2002·Granted Sep 20, 2005·18 cites·10 claims
- 1474US5714408AMethod of forming silicon nitride with varied hydrogen concentrationDENSO CORP·Filed 1996·Granted Feb 3, 1998·33 cites·11 claims
- 1573US7300274B2Change-over device for changing over between a heating medium and a resin material at a time of a secondary formingDENSO CORP·Filed 2005·Granted Nov 27, 2007·4 cites·13 claims
- 1671US6809348B1Semiconductor device and method for manufacturing the sameDENSO CORP·Filed 2000·Granted Oct 26, 2004·19 cites·34 claims
- 1770US5410171AVertical type semiconductor with main current section and emulation current sectionNIPPON DENSO CO·Filed 1993·Granted Apr 25, 1995·29 cites·17 claims
- 1866US7859165B2Fuel pump and motor device for the sameDENSO CORP·Filed 2007·Granted Dec 28, 2010·4 cites·16 claims
- 1965US6864532B2Semiconductor device and method for manufacturing the sameDENSO CORP·Filed 2002·Granted Mar 8, 2005·10 cites·10 claims
- 2064US6903417B2Power semiconductor deviceDENSO CORP·Filed 2003·Granted Jun 7, 2005·4 cites·5 claims
- 2164US5453390AMethod of producing semiconductor device with current detecting functionNIPPON DENSO CO·Filed 1993·Granted Sep 26, 1995·21 cites·5 claims
- 2263US7459118B2Heated medium supplying method and structure for secondary molding of resin molded componentDENSO CORP·Filed 2005·Granted Dec 2, 2008·1 cites·10 claims
- 2363US7438842B2Method of manufacturing resin molding and change-over device for changing over between heating medium and resin material in process of secondary formingDENSO CORP·Filed 2005·Granted Oct 21, 2008·1 cites·18 claims
- 2461US5063423ASemiconductor memory device of a floating gate tunnel oxide typeNIPPON DENSO CO·Filed 1990·Granted Nov 5, 1991·21 cites·9 claims
- 2560US5663096AMethod of manufacturing a vertical semiconductor device with ground surface providing a reduced ON resistanceNIPPON DENSO CO·Filed 1995·Granted Sep 2, 1997·13 cites·8 claims
- 2659US7354829B2Trench-gate transistor with ono gate dielectric and fabrication process thereforDENSO CORP·Filed 2004·Granted Apr 8, 2008·7 cites·7 claims
- 2758US5550067AMethod for producing semiconductor device having DMOS and NMOS elements formed in the same substrateNIPPON DENSO CO·Filed 1993·Granted Aug 27, 1996·20 cites·21 claims
- 2857US5830771AManufacturing method for semiconductor deviceNIPPON DENSO CO·Filed 1995·Granted Nov 3, 1998·19 cites·23 claims
- 2956US6949434B2Method of manufacturing a vertical semiconductor deviceDENSO CORP·Filed 2004·Granted Sep 27, 2005·2 cites·18 claims
- 3055US5798550AVertical type semiconductor device and gate structureNIPPON DENSO CO·Filed 1995·Granted Aug 25, 1998·17 cites·10 claims
- 3154US2005227438A1Semiconductor device and method of manufacturing sameDENSO CORP·Filed 2005·Application pending·0 cites
- 3253US6525400B2Semiconductor memory device and method of manufacturing the sameDENSO CORP·Filed 2002·Granted Feb 25, 2003·4 cites·8 claims
- 3353US5592004ASilicon nitride film having a short absorption wavelength and surrounding crystal-like grain boundariesNIPPON DENSO CO·Filed 1995·Granted Jan 7, 1997·16 cites·3 claims
- 3451US5994187AMethod of manufacturing a vertical semiconductor deviceNIPPON DENSO CO·Filed 1997·Granted Nov 30, 1999·8 cites·32 claims
- 3548US8333007B2Method for manufacturing motor device for a fuel pumpMOROTO KIYONORI·Filed 2009·Granted Dec 18, 2012·0 cites·9 claims
- 3647US6373093B2Semiconductor memory device and method of manufacturing the sameNIPPONDENSO CORP·Filed 2001·Granted Apr 16, 2002·3 cites·6 claims
- 3747US6365458B1Semiconductor memory device and method of manufacturing the sameNIPPON DENSO CO·Filed 2000·Granted Apr 2, 2002·2 cites·43 claims
- 3846US7064033B2Semiconductor device and method of manufacturing sameDENSO CORP·Filed 2004·Granted Jun 20, 2006·0 cites·9 claims
- 3946US6498366B1Semiconductor device that exhibits decreased contact resistance between substrate and drain electrodeDENSO CORP·Filed 1997·Granted Dec 24, 2002·6 cites·75 claims
- 4046US5462896AMethod of forming a sidewall on a semiconductor elementNIPPON DENSO CO·Filed 1992·Granted Oct 31, 1995·20 cites·10 claims
- 4144US6649478B2Semiconductor device and method of manufacturing sameDENSO CORP·Filed 2002·Granted Nov 18, 2003·0 cites·5 claims
- 4243US6972459B2Metal oxide semiconductor transistor having a nitrogen cluster containing layer embedded in the substrateDENSO CORP·Filed 2002·Granted Dec 6, 2005·2 cites·9 claims
- 4342US6137156ASemiconductor device employing silicon nitride layers with varied hydrogen concentrationDENSO CORP·Filed 1998·Granted Oct 24, 2000·7 cites·31 claims
- 4429US5534454AMethod of producing a semiconductor device having accurate current detectionNIPPON DENSO CO·Filed 1995·Granted Jul 9, 1996·1 cites·2 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →