Inventor · disambiguated record
Akira Mase
Also filed as: BANZAI KEIICHIRO · MASE AKIRA
144 granted patents·5 pending applications·9,612 citations·filing 1979–2021
99Inventor score
Files withSEMICONDUCTOR ENERGY LAB128NIPPON DENSO CO10TAIYO NIPPON SANSO CORP2NEWSWATCH INC1SEMICONDUCTOR ENERGY LAB CO IN1
Top patents by PatentIndex Score
149 records- 0199US5485019ASemiconductor device and method for forming the sameSEMICONDUCTOR ENERGY LAB·Filed 1993·Granted Jan 16, 1996·282 cites·16 claims
- 0299US5289030ASemiconductor device with oxide layerSEMICONDUCTOR ENERGY LAB·Filed 1992·Granted Feb 22, 1994·388 cites·17 claims
- 0399US5287205AGradation method for driving liquid crystal device with ramp and select signalSEMICONDUCTOR ENERGY LAB·Filed 1992·Granted Feb 15, 1994·270 cites·24 claims
- 0499US5200846AElectro-optical device having a ratio controlling means for providing gradated display levelsSEMICONDUCTOR ENERGY LAB·Filed 1992·Granted Apr 6, 1993·320 cites·20 claims
- 0598US6476447B1Active matrix display device including a transistorSEMICONDUCTOR ENERGY LAB·Filed 2000·Granted Nov 5, 2002·154 cites·24 claims
- 0698US6013928ASemiconductor device having interlayer insulating film and method for forming the sameSEMICONDUCTOR ENERGY LAB·Filed 1995·Granted Jan 11, 2000·247 cites·70 claims
- 0798US5899547AElectro-optical device and driving method for the sameSEMICONDUCTOR ENERGY LAB·Filed 1997·Granted May 4, 1999·224 cites·43 claims
- 0898US5612799AActive matrix type electro-optical deviceSEMICONDUCTOR ENERGY LAB CO IN·Filed 1995·Granted Mar 18, 1997·253 cites·24 claims
- 0998US5604137AMethod for forming a multilayer integrated circuitSEMICONDUCTOR ENERGY LAB·Filed 1995·Granted Feb 18, 1997·306 cites·11 claims
- 1098US5521107AMethod for forming a field-effect transistor including anodic oxidation of the gateSEMICONDUCTOR ENERGY LAB·Filed 1994·Granted May 28, 1996·291 cites·11 claims
- 1198US5495353AElectro-optical device and driving having an improved electrode and driving arrangementSEMICONDUCTOR ENERGY LAB·Filed 1994·Granted Feb 27, 1996·188 cites·27 claims
- 1298US5414442AElectro-optical device and method of driving the sameSEMICONDUCTOR ENERGY LAB·Filed 1992·Granted May 9, 1995·201 cites·17 claims
- 1398US4691995ALiquid crystal filling deviceSEMICONDUCTOR ENERGY LAB·Filed 1986·Granted Sep 8, 1987·501 cites·9 claims
- 1497US6822261B2Semiconductor device and method for forming the sameSEMICONDUCTOR ENERGY LAB·Filed 2001·Granted Nov 23, 2004·104 cites·52 claims
- 1597US6323528B1Semiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 1998·Granted Nov 27, 2001·178 cites·49 claims
- 1697US5963278AElectro-optical device and method for driving the sameSEMICONDUCTOR ENERGY LAB·Filed 1997·Granted Oct 5, 1999·150 cites·40 claims
- 1797US5956105AElectro-optical device and method of driving the sameSEMICONDUCTOR ENERGY LAB·Filed 1995·Granted Sep 21, 1999·194 cites·12 claims
- 1897US5933205AElectro-optical device and method for driving the sameSEMICONDUCTOR ENERGY LAB·Filed 1998·Granted Aug 3, 1999·160 cites·44 claims
- 1997US5568288AMethod for forming thin film transistors with anodic oxide on sides of gate lineSEMICONDUCTOR ENERGY LAB·Filed 1993·Granted Oct 22, 1996·123 cites·9 claims
- 2097US5500538AElectro-optical device and method of driving the sameSEMICONDUCTOR ENERGY LAB·Filed 1994·Granted Mar 19, 1996·128 cites·23 claims
- 2196US6566711B1Semiconductor device having interlayer insulating filmSEMICONDUCTOR ENERGY LAB·Filed 1999·Granted May 20, 2003·126 cites·123 claims
- 2296US5585949AElectro-optical deviceSEMICONDUCTOR ENERGY LAB·Filed 1994·Granted Dec 17, 1996·201 cites·8 claims
- 2396US5424752AMethod of driving an electro-optical deviceSEMICONDUCTOR ENERGY LAB·Filed 1993·Granted Jun 13, 1995·159 cites·21 claims
- 2495US6004831AMethod for fabricating a thin film semiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 1997·Granted Dec 21, 1999·112 cites·24 claims
- 2595US5905555AActive matrix type electro-optical device having leveling filmSEMICONDUCTOR ENERGY LAB·Filed 1996·Granted May 18, 1999·108 cites·59 claims
- 2695US5849611AMethod for forming a taper shaped contact hole by oxidizing a wiringSEMICONDUCTOR ENERGY LAB·Filed 1995·Granted Dec 15, 1998·146 cites·13 claims
- 2795US5784073AElectro-optical device and method of driving the sameSEMICONDUCTOR ENERGY LAB·Filed 1995·Granted Jul 21, 1998·125 cites·8 claims
- 2895US5261156AMethod of electrically connecting an integrated circuit to an electric deviceSEMICONDUCTOR ENERGY LAB·Filed 1992·Granted Nov 16, 1993·211 cites·18 claims
- 2995US5165075AElectro-optic device having pairs of complementary transistorsSEMICONDUCTOR ENERGY LAB·Filed 1991·Granted Nov 17, 1992·121 cites·8 claims
- 3093US6713783B1Compensating electro-optical device including thin film transistorsSEMICONDUCTOR ENERGY LAB·Filed 1998·Granted Mar 30, 2004·140 cites·17 claims
- 3193US6236064B1Electro-optical deviceSEMICONDUCTOR ENERGY LAB·Filed 1995·Granted May 22, 2001·97 cites·70 claims
- 3293US5946059AElectro-optical device and driving method for the sameSEMICONDUCTOR ENERGY LAB·Filed 1997·Granted Aug 31, 1999·92 cites·42 claims
- 3393US5710612ALiquid crystal device and manufacturing method therefor with anisotropic conductive adhesive connecting glass substrate and glass auxiliary substrateSEMICONDUCTOR ENERGY LAB·Filed 1992·Granted Jan 20, 1998·64 cites·8 claims
- 3493US5534884AElectro-optical device system and method of driving an electro-optical deviceSEMICONDUCTOR ENERGY LAB·Filed 1994·Granted Jul 9, 1996·128 cites·37 claims
- 3593US5495121ASemiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 1992·Granted Feb 27, 1996·92 cites·26 claims
- 3693US5289300AMethod of manufacturing electro-optical devices wherein the electrode is patterned on the modulation layerSEMICONDUCTOR ENERGY LAB·Filed 1992·Granted Feb 22, 1994·115 cites·29 claims
- 3792US6147375AActive matrix display deviceSEMICONDUCTOR ENERGY LAB·Filed 1998·Granted Nov 14, 2000·106 cites·44 claims
- 3892US5130833ALiquid crystal device and manufacturing method thereforSEMICONDUCTOR ENERGY LAB·Filed 1990·Granted Jul 14, 1992·60 cites·8 claims
- 3992US4917474AOptoelectronic panel and method of making the sameSEMICONDUCTOR ENERGY LAB·Filed 1988·Granted Apr 17, 1990·86 cites·15 claims
- 4092US4308575APower source systemTOKYO SHIBAURA ELECTRIC CO·Filed 1979·Granted Dec 29, 1981·86 cites·8 claims
- 4191US6977392B2Semiconductor display deviceSEMICONDUCTOR ENERGY LAB·Filed 2003·Granted Dec 20, 2005·45 cites·30 claims
- 4290US5716871ASemiconductor device and method of forming the sameSEMICONDUCTOR ENERGY LAB·Filed 1993·Granted Feb 10, 1998·70 cites·26 claims
- 4390US5543947AMethod of driving an LCD employing an active matrix with short pulses for gray scaleSEMICONDUCTOR ENERGY LAB·Filed 1994·Granted Aug 6, 1996·94 cites·8 claims
- 4490US5383041AElectro-optical deviceSEMICONDUCTOR ENERGY LAB·Filed 1993·Granted Jan 17, 1995·71 cites·18 claims
- 4590US4786358AMethod for forming a pattern of a film on a substrate with a laser beamSEMICONDUCTOR ENERGY LAB·Filed 1987·Granted Nov 22, 1988·88 cites·15 claims
- 4688US6404476B1Device having an improved connective structure between two electrodesSEMICONDUCTOR ENERGY LAB·Filed 1997·Granted Jun 11, 2002·47 cites·25 claims
- 4788US5642213AElectro-optical deviceSEMICONDUCTOR ENERGY LAB·Filed 1994·Granted Jun 24, 1997·63 cites·18 claims
- 4888US5474945AMethod for forming semiconductor device comprising metal oxideSEMICONDUCTOR ENERGY LAB·Filed 1993·Granted Dec 12, 1995·64 cites·15 claims
- 4988US4799776AFerroelectric liquid crystal display device having a single polarizerSEMICONDUCTOR ENERGY LAB·Filed 1986·Granted Jan 24, 1989·67 cites·15 claims
- 5087US7948569B2Active matrix type display deviceSEMICONDUCTOR ENERGY LAB·Filed 2008·Granted May 24, 2011·8 cites·16 claims
Showing the top 50 of 149 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →