Inventor · disambiguated record
Akira Mitsuiki
Also filed as: MITSUIKI AKIRA
9 granted patents·5 pending applications·95 citations·filing 1998–2023
87Inventor score
Files withRENESAS ELECTRONICS CORP5NEC CORP3NEC ELECTRONICS CORP2MITSUIKI AKIRA1NEC ELECTRONICS CORPORATIONS1
Top patents by PatentIndex Score
14 records- 0184US6716761B2Method of forming fine patternsSEMICONDUCTOR LEADING EDGE TEC·Filed 2001·Granted Apr 6, 2004·38 cites·6 claims
- 0283US9589954B2Semiconductor device having recess filled with insulating material provided between source/drain impurity region and gate insulatorRENESAS ELECTRONICS CORP·Filed 2015·Granted Mar 7, 2017·5 cites·4 claims
- 0372US6372602B1Method of forming a shallow trench isolation structure in a semiconductor deviceNEC CORP·Filed 2000·Granted Apr 16, 2002·17 cites·3 claims
- 0470US7462566B2Method for manufacturing semiconductor deviceNEC ELECTRONICS CORP·Filed 2006·Granted Dec 9, 2008·3 cites·9 claims
- 0559US2024162137A1Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2023·Application pending·0 cites
- 0658US7510981B2Method for manufacturing semiconductor deviceNEC ELECTRONICS CORPORATIONS·Filed 2006·Granted Mar 31, 2009·3 cites·14 claims
- 0757US6376383B2Method for etching silicon layerNEC CORP·Filed 1999·Granted Apr 23, 2002·23 cites·7 claims
- 0850US8492227B2Method of forming side wall spacers for a semiconductor deviceMITSUIKI AKIRA·Filed 2010·Granted Jul 23, 2013·1 cites·5 claims
- 0949US2022123100A1Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2021·Application pending·0 cites
- 1044US10078182B2Semiconductor device and method for manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2016·Granted Sep 18, 2018·0 cites·14 claims
- 1144US2008194107A1Method of manufacturing semiconductor deviceNEC ELECTRONICS CORP·Filed 2008·Application pending·0 cites
- 1233US6200902B1Method of etching a layer in a semiconductor deviceNEC CORP·Filed 1998·Granted Mar 13, 2001·5 cites·3 claims
- 1333US2016247931A1Method of manufacturing semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2016·Application pending·0 cites
- 1427US2001001732A1Process for fabricating semiconductor device without etching residue produced during etching to oxide layerFiled 1999·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →