Inventor · disambiguated record
Akiyoshi Mutou
Also filed as: MUTOU AKIYOSHI
2 granted patents·3 pending applications·35 citations·filing 2002–2006
61Inventor score
Top patents by PatentIndex Score
5 records- 0179US6774409B2Semiconductor device with NMOS including Si:C channel region and/or PMOS including SiGe channel regionSHARP KK·Filed 2002·Granted Aug 10, 2004·31 cites·16 claims
- 0264US7172934B2Method of manufacturing a semiconductor device with a silicon-germanium gate electrodeSHARP KK·Filed 2006·Granted Feb 6, 2007·4 cites·6 claims
- 0344US2006138518A1Semiconductor device with silicon-germanium gate electrode and method for manufacturing thereofSHARP KK·Filed 2006·Application pending·0 cites
- 0438US2005045938A1Semiconductor device with silicon-germanium gate electrode and method for manufacturing thereofSEMICONDUCTOR LEADING EDGE TEC·Filed 2004·Application pending·0 cites
- 0531US2004238895A1Semiconductor device with silicon-germanium gate electrode and method for manufacturing thereofSEMICONDUCTOR LEADING EDGE TEC·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →