Inventor · disambiguated record
Akitoshi Nishimura
Also filed as: NISHIMURA AKITOSHI
19 granted patents·863 citations·filing 1989–2003
96Inventor score
Files withTEXAS INSTRUMENTS INC19
Top patents by PatentIndex Score
19 records- 0196US6587367B1Dummy cell structure for 1T1C FeRAM cell arrayTEXAS INSTRUMENTS INC·Filed 2002·Granted Jul 1, 2003·93 cites·12 claims
- 0295US6373127B1Integrated capacitor on the back of a chipTEXAS INSTRUMENTS INC·Filed 1999·Granted Apr 16, 2002·229 cites·10 claims
- 0394US6728128B2Dummy cell structure for 1T1C FeRAM cell arrayTEXAS INSTRUMENTS INC·Filed 2003·Granted Apr 27, 2004·71 cites·11 claims
- 0490US5508953ACapacitor, electrode structure, and semiconductor memory deviceTEXAS INSTRUMENTS INC·Filed 1994·Granted Apr 16, 1996·87 cites·7 claims
- 0586US6033953AMethod for manufacturing dielectric capacitor, dielectric memory deviceTEXAS INSTRUMENTS INC·Filed 1997·Granted Mar 7, 2000·84 cites·25 claims
- 0680US6363002B1Ferroelectric memory with bipolar drive pulsesTEXAS INSTRUMENTS INC·Filed 1998·Granted Mar 26, 2002·45 cites·21 claims
- 0780US5168340ASemiconductor integrated circuit device with guardring regions to prevent the formation of an MOS diodeTEXAS INSTRUMENTS INC·Filed 1990·Granted Dec 1, 1992·48 cites·6 claims
- 0879US4949138ASemiconductor integrated circuit deviceTEXAS INSTRUMENTS INC·Filed 1989·Granted Aug 14, 1990·39 cites·8 claims
- 0971US5793600AMethod for forming high dielectric capacitor electrode structure and semiconductor memory devicesTEXAS INSTRUMENTS INC·Filed 1995·Granted Aug 11, 1998·32 cites·12 claims
- 1065US6150183AMethod for manufacturing metal oxide capacitor and method for manufacturing semiconductor memory deviceTEXAS INSTRUMENTS INC·Filed 1997·Granted Nov 21, 2000·29 cites·14 claims
- 1162US5654567ACapacitor, electrode or wiring structure, and semi conductor deviceTEXAS INSTRUMENTS INC·Filed 1996·Granted Aug 5, 1997·19 cites·23 claims
- 1260US5840615AMethod for forming a ferroelectric material film by the sol-gel method, along with a process for a production of a capacitor and its raw material solutionTEXAS INSTRUMENTS INC·Filed 1997·Granted Nov 24, 1998·27 cites·9 claims
- 1359US6342420B1Hexagonally symmetric integrated circuit cellTEXAS INSTRUMENTS INC·Filed 2000·Granted Jan 29, 2002·13 cites·8 claims
- 1451US6297085B1Method for manufacturing ferroelectric capacitor and method for manufacturing ferroelectric memoryTEXAS INSTRUMENTS INC·Filed 1997·Granted Oct 2, 2001·19 cites·3 claims
- 1551US5776788AMethod for forming a strong dielectric film by the sol-gel technique and a method for manufacturing a capacitorTEXAS INSTRUMENTS INC·Filed 1996·Granted Jul 7, 1998·17 cites·9 claims
- 1649US6721200B2Dummy cell structure for 1T1C FeRAM cell arrayTEXAS INSTRUMENTS INC·Filed 2003·Granted Apr 13, 2004·4 cites·5 claims
- 1749US6534808B2Metal-insulator-semiconductor photocell and imagerTEXAS INSTRUMENTS INC·Filed 2001·Granted Mar 18, 2003·2 cites·14 claims
- 1842US6724646B2Dummy cell structure for 1T1C FeRAM cell arrayTEXAS INSTRUMENTS INC·Filed 2003·Granted Apr 20, 2004·2 cites·5 claims
- 1935US6166408AHexagonally symmetric integrated circuit cellTEXAS INSTRUMENTS INC·Filed 1998·Granted Dec 26, 2000·3 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →