Inventor · disambiguated record
Akihito Ohno
Also filed as: OHNO AKIHITO
20 granted patents·6 pending applications·27 citations·filing 2005–2019
91Inventor score
Top patents by PatentIndex Score
26 records- 0182US9422640B2Single-crystal 4H-SiC substrateMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Aug 23, 2016·1 cites·12 claims
- 0281US10858758B2Manufacturing method for silicon carbide epitaxial wafer and manufacturing method for silicon carbide semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2017·Granted Dec 8, 2020·3 cites·12 claims
- 0380US7763486B2Method for manufacturing nitride semiconductor stacked structure and semiconductor light-emitting deviceMITSUBISHI ELECTRIC CORP·Filed 2007·Granted Jul 27, 2010·7 cites·10 claims
- 0471US9957638B2Method for manufacturing silicon carbide semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2014·Granted May 1, 2018·2 cites·4 claims
- 0571US7825012B2Method for manufacturing nitride semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2009·Granted Nov 2, 2010·3 cites·12 claims
- 0669US9903048B2Single-crystal 4H-SiC substrateMITSUBISHI ELECTRIC CORP·Filed 2016·Granted Feb 27, 2018·0 cites·9 claims
- 0768US10950435B2SiC epitaxial wafer, method for manufacturing SiC epitaxial wafer, SiC device, and power conversion apparatusMITSUBISHI ELECTRIC CORP·Filed 2017·Granted Mar 16, 2021·1 cites·13 claims
- 0867US7923742B2Method for production of a nitride semiconductor laminated structure and an optical semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2009·Granted Apr 12, 2011·2 cites·24 claims
- 0966US9824911B2Substrate support and semiconductor manufacturing apparatusOHNO AKIHITO·Filed 2013·Granted Nov 21, 2017·2 cites·3 claims
- 1066US9564315B1Manufacturing method and apparatus for manufacturing silicon carbide epitaxial waferMITSUBISHI ELECTRIC CORP·Filed 2016·Granted Feb 7, 2017·1 cites·7 claims
- 1165US10707075B2Semiconductor wafer, semiconductor device, and method for producing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2016·Granted Jul 7, 2020·1 cites·20 claims
- 1261US8731018B2Semiconductor laserSHIGIHARA KIMIO·Filed 2011·Granted May 20, 2014·2 cites·3 claims
- 1361US8263999B2Nitride semiconductor light-emitting deviceOHNO AKIHITO·Filed 2007·Granted Sep 11, 2012·2 cites·6 claims
- 1458US10711372B2Silicon carbide epitaxial wafer manufacturing method, silicon carbide semiconductor device manufacturing method and silicon carbide epitaxial wafer manufacturing apparatusMITSUBISHI ELECTRIC CORP·Filed 2019·Granted Jul 14, 2020·0 cites·4 claims
- 1553US10370775B2Silicon carbide epitaxial wafer manufacturing method, silicon carbide semiconductor device manufacturing method and silicon carbide epitaxial wafer manufacturing apparatusMITSUBISHI ELECTRIC CORP·Filed 2016·Granted Aug 6, 2019·0 cites·11 claims
- 1652US9752254B2Method for manufacturing a single-crystal 4H—SiC substrateMITSUBISHI ELECTRIC CORP·Filed 2016·Granted Sep 5, 2017·0 cites·9 claims
- 1752US7632695B2Semiconductor device manufacturing methodMITSUBISHI ELECTRIC CORP·Filed 2007·Granted Dec 15, 2009·0 cites·6 claims
- 1850US2010289056A1Semiconductor light-emitting devicesMITSUBISHI ELECTRIC CORP·Filed 2010·Application pending·0 cites
- 1950US2008073660A1Semiconductor light-emitting devicesMITSUBISHI ELECTRIC CORP·Filed 2007·Application pending·0 cites
- 2047US2006086948A1Semiconductor device and semiconductor device manufacturing methodMITSUBISHI ELECTRIC CORP·Filed 2005·Application pending·0 cites
- 2142US7172429B2Method of manufacturing semiconductor light emitting deviceMITSUBISHI ELECTRIC CORP·Filed 2006·Granted Feb 6, 2007·0 cites·8 claims
- 2240US9355841B2Manufacturing method of high electron mobility transistorMITSUBISHI ELECTRIC CORP·Filed 2015·Granted May 31, 2016·0 cites·6 claims
- 2337US2011177678A1Method for manufacturing nitride semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2010·Application pending·0 cites
- 2437US2011177679A1Method for manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2010·Application pending·0 cites
- 2536US2012322245A1Method of manufacturing nitride semiconductor deviceOHNO AKIHITO·Filed 2012·Application pending·0 cites
- 2635US9478418B2Method of manufacturing semiconductor elementMITSUBISHI ELECTRIC CORP·Filed 2015·Granted Oct 25, 2016·0 cites·10 claims
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