Inventor · disambiguated record
Alexander Badmaev
Also filed as: BADMAEV ALEXANDER
6 granted patents·6 pending applications·40 citations·filing 2009–2024
80Inventor score
Top patents by PatentIndex Score
12 records- 0189US8354291B2Integrated circuits based on aligned nanotubesUNIV SOUTHERN CALIFORNIA·Filed 2009·Granted Jan 15, 2013·14 cites·11 claims
- 0287US8692230B2High performance field-effect transistorsZHOU CHONGWU·Filed 2012·Granted Apr 8, 2014·12 cites·25 claims
- 0386US8860137B2Radio frequency devices based on carbon nanomaterialsZHOU CHONGWU·Filed 2012·Granted Oct 14, 2014·11 cites·21 claims
- 0478US8778716B2Integrated circuits based on aligned nanotubesUNIV SOUTHERN CALIFORNIA·Filed 2013·Granted Jul 15, 2014·3 cites·22 claims
- 0558US2025220870A1Integrated circuit structure with varied epitaxial source or drain structures and device typesINTEL CORP·Filed 2023·Application pending·0 cites
- 0658US2025311370A1Stacked transistor architectures including source & drain structures with molybdenumINTEL CORP·Filed 2024·Application pending·0 cites
- 0757US2025311311A1Source and drain structures providing highly conductive contact interface and strain to mosfet channelINTEL CORP·Filed 2024·Application pending·0 cites
- 0852US8618612B2Integrated circuits based on aligned nanotubesZHOU CHONGWU·Filed 2012·Granted Dec 31, 2013·0 cites·4 claims
- 0952US2025006806A1High conductivity transistor contacts comprising gallium enriched layerINTEL CORP·Filed 2023·Application pending·0 cites
- 1042US11955482B2Source or drain structures with high phosphorous dopant concentrationINTEL CORP·Filed 2020·Granted Apr 9, 2024·0 cites·25 claims
- 1139US2020194577A1Gan based hemt device relaxed buffer structure on siliconINTEL CORP·Filed 2018·Application pending·0 cites
- 1236US2011101302A1Wafer-scale fabrication of separated carbon nanotube thin-film transistorsUNIV SOUTHERN CALIFORNIA·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →