Inventor · disambiguated record
Alain Chantre
Also filed as: CHANTRE ALAIN
30 granted patents·4 pending applications·370 citations·filing 1992–2019
96Inventor score
Top patents by PatentIndex Score
34 records- 0196US10488587B2Methods of fabricating integrated circuit devices with components on both sides of a semiconductor layerST MICROELECTRONICS SA·Filed 2017·Granted Nov 26, 2019·11 cites·16 claims
- 0296US9899800B2Laser device and process for fabricating such a laser deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Feb 20, 2018·33 cites·17 claims
- 0392US9507089B2Method of manufacturing a photonic integrated circuit optically coupled to a laser of III-V materialST MICROELECTRONICS SA·Filed 2015·Granted Nov 29, 2016·11 cites·20 claims
- 0489US9461441B2Integrated hybrid laser source compatible with a silicon technology platform, and fabrication processST MICROELECTRONICS SA·Filed 2015·Granted Oct 4, 2016·5 cites·20 claims
- 0582US6177717B1Low-noise vertical bipolar transistor and corresponding fabrication processST MICROELECTRONICS SA·Filed 1999·Granted Jan 23, 2001·62 cites·16 claims
- 0681US9640631B2Bipolar transistor manufacturing methodST MICROELECTRONICS SA·Filed 2015·Granted May 2, 2017·3 cites·22 claims
- 0777US6551891B1Process for fabricating a self-aligned vertical bipolar transistorST MICROELECTRONICS SA·Filed 2000·Granted Apr 22, 2003·21 cites·22 claims
- 0876US6472262B2Method for fabricating a bipolar transistor of the self-aligned double-polysilicon type with a heterojunction base and corresponding transistorST MICROELECTRONICS SA·Filed 2001·Granted Oct 29, 2002·23 cites·23 claims
- 0976US6384469B1Vertical bipolar transistor, in particular with an SiGe heterojunction base, and fabrication processFRANCE TELECOM·Filed 1999·Granted May 7, 2002·39 cites·18 claims
- 1075US10139563B2Method for making photonic chip with multi-thickness electro-optic devices and related devicesST MICROELECTRONICS SA·Filed 2015·Granted Nov 27, 2018·2 cites·21 claims
- 1175US6265275B1Method of selectively doping the intrinsic collector of a vertical bipolar transistor with epitaxial baseST MICROELECTRONICS SA·Filed 1999·Granted Jul 24, 2001·38 cites·11 claims
- 1274US6316818B1Vertical bipolar transistor including an extrinsic base with reduced roughness, and fabrication processST MICROELECTRONICS SA·Filed 1999·Granted Nov 13, 2001·30 cites·3 claims
- 1373US10014660B2Laser device and process for fabricating such a laser deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted Jul 3, 2018·2 cites·15 claims
- 1471US5367184AVertical JFET transistor with optimized bipolar operating mode and corresponding method of fabricationFRANCE TELECOM·Filed 1993·Granted Nov 22, 1994·31 cites·13 claims
- 1569US6744080B2Method of manufacturing a bipolar transistor of double-polysilicon, heterojunction-base type and corresponding transistorST MICROELECTRONICS SA·Filed 2002·Granted Jun 1, 2004·15 cites·12 claims
- 1665US10877211B2Methods of fabricating integrated circuit devices with components on both sides of a semiconductor layerST MICROELECTRONICS SA·Filed 2019·Granted Dec 29, 2020·0 cites·20 claims
- 1761US6436782B2Process for fabricating a self-aligned double-polysilicon bipolar transistorST MICROELECTRONICS SA·Filed 2001·Granted Aug 20, 2002·10 cites·18 claims
- 1856US2014376857A1Photonic integrated circuit and fabrication processST MICROELECTRONICS SA·Filed 2014·Application pending·0 cites
- 1955US6656812B1Vertical bipolar transistor having little low-frequency noise and high current gain, and corresponding fabrication processST MICROELECTRONICS SA·Filed 2000·Granted Dec 2, 2003·8 cites·14 claims
- 2054US6642096B2Bipolar transistor manufacturingST MICROELECTRONICS SA·Filed 2001·Granted Nov 4, 2003·6 cites·22 claims
- 2153US10511147B2Laser device and process for fabricating such a laser deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2018·Granted Dec 17, 2019·0 cites·11 claims
- 2248US9362380B2Heterojunction bipolar transistorST MICROELECTRONICS SA·Filed 2013·Granted Jun 7, 2016·0 cites·25 claims
- 2348US2013270649A1Bipolar transistor manufacturing methodST MICROELECTRONICS SA·Filed 2013·Application pending·0 cites
- 2447US7824978B2Bipolar transistor with high dynamic performancesST MICROELECTRONICS SA·Filed 2006·Granted Nov 2, 2010·0 cites·19 claims
- 2546US9704967B2Heterojunction bipolar transistorST MICROELECTRONICS SA·Filed 2015·Granted Jul 11, 2017·0 cites·20 claims
- 2646US5340757AMethod of manufacturing a vertical field effect transistorFRANCE TELECOM·Filed 1992·Granted Aug 23, 1994·13 cites·4 claims
- 2741US7615455B2Integrated circuit bipolar transistorST MICROELECTRONICS SA·Filed 2006·Granted Nov 10, 2009·0 cites·20 claims
- 2840US7226844B2Method of manufacturing a bipolar transistor with a single-crystal base contactST MICROELECTRONICS SA·Filed 2005·Granted Jun 5, 2007·0 cites·20 claims
- 2939US7122879B2Bipolar transistor with high dynamic performancesST MICROELECTRONICS SA·Filed 2004·Granted Oct 17, 2006·0 cites·6 claims
- 3039US6403437B1Method for making hyperfrequency transistorCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1998·Granted Jun 11, 2002·7 cites·5 claims
- 3137US6723610B2Vertical bipolar transistor including an extrinsic base with reduced roughness, and fabrication processST MICROELECTRONICS SA·Filed 2001·Granted Apr 20, 2004·0 cites·9 claims
- 3237US2003155611A1Process for fabricating a self-aligned vertical bipolar transistorST MICROELECTRONICS SA·Filed 2003·Application pending·0 cites
- 3336US6902970B2Integrated circuit including, and fabrication method for producing, bipolar and MOSFET transistorsST MICROELECTRONICS SA·Filed 2003·Granted Jun 7, 2005·0 cites·21 claims
- 3435US2005037587A1Heterojunction bipolar transistorST MICROELECTRONICS SA·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →