Inventor · disambiguated record
Albert Fayrushin
Also filed as: FAYRUSHIN ALBERT
34 granted patents·17 pending applications·87 citations·filing 2008–2025
96Inventor score
Files withMICRON TECHNOLOGY INC37LODESTAR LICENSING GROUP LLC5SAMSUNG ELECTRONICS CO LTD5LEE CHANG-HYUN3LEE JAEDUK1
Top patents by PatentIndex Score
51 records- 0198US11974430B2Microelectronic devices with dopant extensions near a GIDL region below a tier stack, and related methods and systemsMICRON TECHNOLOGY INC·Filed 2021·Granted Apr 30, 2024·4 cites·25 claims
- 0298US11362175B1Select gate gate-induced-drain-leakage enhancementMICRON TECHNOLOGY INC·Filed 2021·Granted Jun 14, 2022·8 cites·20 claims
- 0394US10937482B2Memory cells and arrays of elevationally-extending strings of memory cellsMICRON TECHNOLOGY INC·Filed 2019·Granted Mar 2, 2021·10 cites·13 claims
- 0492US11778824B2Apparatuses including band offset materials, and related systemsMICRON TECHNOLOGY INC·Filed 2021·Granted Oct 3, 2023·2 cites·14 claims
- 0590US11742380B2Select gate gate-induced-drain-leakage enhancementMICRON TECHNOLOGY INC·Filed 2022·Granted Aug 29, 2023·1 cites·20 claims
- 0690US9324727B2Memory devices having semiconductor patterns on a substrate and methods of manufacturing the sameLEE CHANG-HYUN·Filed 2014·Granted Apr 26, 2016·12 cites·24 claims
- 0790US7760550B2Methods of reading data from non-volatile semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jul 20, 2010·27 cites·16 claims
- 0889US10923493B2Microelectronic devices, electronic systems, and related methodsMICRON TECHNOLOGY INC·Filed 2018·Granted Feb 16, 2021·4 cites·20 claims
- 0988US11417396B2Sequential voltage ramp-down of access lines of non-volatile memory deviceMICRON TECHNOLOGY INC·Filed 2020·Granted Aug 16, 2022·2 cites·18 claims
- 1088US10937904B2Programmable charge-storage transistor, an array of elevationally-extending strings of memory cells, and a method of forming an array of elevationally-extending strings of memory cellsMICRON TECHNOLOGY INC·Filed 2018·Granted Mar 2, 2021·4 cites·3 claims
- 1187US12471283B2Microelectronic devices with source region vertical extension between upper and lower channel regions, and related methodsMICRON TECHNOLOGY INC·Filed 2024·Granted Nov 11, 2025·0 cites·19 claims
- 1285US2025301648A1Microelectronic devices including pillars with upper portions having perimeters interrputed by elongate isolation structuresLODESTAR LICENSING GROUP LLC·Filed 2025·Application pending·0 cites
- 1385US2025294762A1Memory devices including band offset materialsLODESTAR LICENSING GROUP LLC·Filed 2025·Application pending·0 cites
- 1484US2025338499A1Microelectronic devices with vertically recessed channel structures and discrete, spaced inter-slit structures, and related methodsMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 1583US12324154B2Microelectronic devices including pillars with partially-circular upper portions and circular lower portions, and related methodsLODESTAR LICENSING GROUP LLC·Filed 2023·Granted Jun 3, 2025·0 cites·19 claims
- 1683US11887667B2Select gate transistor with segmented channel finMICRON TECHNOLOGY INC·Filed 2021·Granted Jan 30, 2024·1 cites·21 claims
- 1783US11127751B2Back gates and related apparatuses, systems, and methodsMICRON TECHNOLOGY INC·Filed 2020·Granted Sep 21, 2021·2 cites·25 claims
- 1882US12342544B2Apparatuses including band offset materials, and related memory devicesLODESTAR LICENSING GROUP LLC·Filed 2023·Granted Jun 24, 2025·0 cites·18 claims
- 1982US10803948B2Sequential voltage ramp-down of access lines of non-volatile memory deviceMICRON TECHNOLOGY INC·Filed 2018·Granted Oct 13, 2020·4 cites·12 claims
- 2080US11201167B2Semiconductor pillars having triangular-shaped lateral peripheries, and integrated assembliesMICRON TECHNOLOGY INC·Filed 2019·Granted Dec 14, 2021·2 cites·29 claims
- 2177US11800717B2Microelectronic devices including isolation structures protruding into upper pillar portions, and related methods and systemsMICRON TECHNOLOGY INC·Filed 2022·Granted Oct 24, 2023·0 cites·20 claims
- 2277US2025318135A1Nand structures with polarized materialsMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 2373US12279434B2NAND structures with polarized materialsMICRON TECHNOLOGY INC·Filed 2022·Granted Apr 15, 2025·0 cites·12 claims
- 2472US11322516B2Microelectronic devices including isolation structures protruding into upper pillar portions, and related methods and systemsMICRON TECHNOLOGY INC·Filed 2020·Granted May 3, 2022·0 cites·25 claims
- 2571US12108601B2Back gates and related apparatuses, systems, and methodsMICRON TECHNOLOGY INC·Filed 2021·Granted Oct 1, 2024·0 cites·18 claims
- 2671US12004351B2Integrated assemblies, and methods of forming integrated assembliesLODESTAR LICENSING GROUP LLC·Filed 2022·Granted Jun 4, 2024·0 cites·17 claims
- 2771US11790991B2Sequential voltage ramp-down of access lines of non-volatile memory deviceMICRON TECHNOLOGY INC·Filed 2022·Granted Oct 17, 2023·0 cites·20 claims
- 2871US2024244845A1Electronic devices comprising reduced charge confinement regions in storage nodes of pillars and related methods and systemsMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 2968US11616079B2Semiconductor pillars having triangular-shaped lateral peripheries, and integrated assembliesMICRON TECHNOLOGY INC·Filed 2021·Granted Mar 28, 2023·0 cites·25 claims
- 3068US2025151275A1Memory device having memory cell strings and separate read and write control gatesMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 3168US2024112734A1Select gate transistor with segmented channel finMICRON TECHNOLOGY INC·Filed 2023·Application pending·0 cites
- 3267US12200928B2Memory device having memory cell strings and separate read and write control gatesMICRON TECHNOLOGY INC·Filed 2021·Granted Jan 14, 2025·0 cites·16 claims
- 3366US2025081460A1Microelectronic devices, and related methods and memory devicesMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 3465US12356617B2Microelectronic devices with vertically recessed channel structures and discrete, spaced inter-slit structures, and related methods and systemsMICRON TECHNOLOGY INC·Filed 2021·Granted Jul 8, 2025·0 cites·18 claims
- 3565US7968407B2Methods of manufacturing semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Jun 28, 2011·2 cites·10 claims
- 3665US2024389329A1Memory device having memory cell strings and shared read and write control gatesMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 3763US11430809B2Integrated assemblies, and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2020·Granted Aug 30, 2022·0 cites·41 claims
- 3862US11956954B2Electronic devices comprising reduced charge confinement regions in storage nodes of pillars and related methodsMICRON TECHNOLOGY INC·Filed 2020·Granted Apr 9, 2024·0 cites·28 claims
- 3962US7842570B2Semiconductor memory devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Nov 30, 2010·2 cites·15 claims
- 4061US11424363B2Programmable charge-storage transistor, an array of elevationally-extending strings of memory cells, and a method of forming an array of elevationally-extending strings of memory cellsMICRON TECHNOLOGY INC·Filed 2021·Granted Aug 23, 2022·0 cites·6 claims
- 4156US2025359063A1Transistor with channel layer including heavily doped regionMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 4255US2025324607A1Ferroelectric Memory Circuitry And Method Used In Forming Ferroelectric Memory CircuitryMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 4354US2024074201A1Memory Circuitry And Method Used In Forming Memory CircuitryMICRON TECHNOLOGY INC·Filed 2022·Application pending·0 cites
- 4452US9082750B2Non-volatile memory devices having reduced susceptibility to leakage of stored chargesSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jul 14, 2015·0 cites·20 claims
- 4551US10943915B1Integrated memory having the body region comprising a different semiconductor composition than the source/drain regionMICRON TECHNOLOGY INC·Filed 2019·Granted Mar 9, 2021·0 cites·40 claims
- 4649US2024339158A1Controlling pillar voltage using wordline boost voltage and select gate leakage during all levels programming of a memory deviceMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 4748US2012132982A1Non-Volatile Memory DevicesLEE CHANG-HYUN·Filed 2011·Application pending·0 cites
- 4845US2024071500A1Memory array structures and methods of their fabricationMICRON TECHNOLOGY INC·Filed 2023·Application pending·0 cites
- 4945US2015236111A1Methods of manufacturing non-volatile memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2015·Application pending·0 cites
- 5039US8791520B2Non-volatile memory devices having a floating gate cap between a floating gate and a gate insulating layerLEE JAEDUK·Filed 2011·Granted Jul 29, 2014·0 cites·6 claims
Showing the top 50 of 51 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →