Inventor · disambiguated record
Allen W. Hanson
Also filed as: HANSON ALLEN · HANSON ALLEN W · HANSON ALLEN WILLIAM
31 granted patents·6 pending applications·366 citations·filing 1998–2024
97Inventor score
Files withMACOM TECH SOLUTIONS HOLDINGS INC12INT RECTIFIER CORP7NITRONEX CORP6M/A-COM TECH SOLUTIONS HOLDINGS INC3HANSON ALLEN W2
Top patents by PatentIndex Score
37 records- 0198US8343856B2Method for forming gallium nitride devices with conductive regionsINT RECTIFIER CORP·Filed 2011·Granted Jan 1, 2013·85 cites·20 claims
- 0296US7566913B2Gallium nitride material devices including conductive regions and methods associated with the sameNITRONEX CORP·Filed 2006·Granted Jul 28, 2009·27 cites·19 claims
- 0393US9978858B2Methods of manufacturing gallium nitride devicesINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2017·Granted May 22, 2018·8 cites·20 claims
- 0493US9627473B2Parasitic channel mitigation in III-nitride material semiconductor structuresM/A-COM TECH SOLUTIONS HOLDINGS INC·Filed 2015·Granted Apr 18, 2017·9 cites·18 claims
- 0593US7352016B2Gallium nitride material transistors and methods associated with the sameNITRONEX CORP·Filed 2006·Granted Apr 1, 2008·23 cites·19 claims
- 0693US7247889B2III-nitride material structures including silicon substratesNITRONEX CORP·Filed 2004·Granted Jul 24, 2007·83 cites·32 claims
- 0791US7135720B2Gallium nitride material transistors and methods associated with the sameNITRONEX CORP·Filed 2004·Granted Nov 14, 2006·50 cites·81 claims
- 0889US9773898B2III-nitride semiconductor structures comprising spatially patterned implanted speciesM/A-COM TECH SOLUTIONS HOLDINGS INC·Filed 2015·Granted Sep 26, 2017·5 cites·13 claims
- 0989US8350288B2Gallium nitride devices with electrically conductive regionsINT RECTIFIER CORP·Filed 2011·Granted Jan 8, 2013·6 cites·15 claims
- 1087US9318417B2Gallium nitride devicesINT RECTIFIER CORP·Filed 2015·Granted Apr 19, 2016·3 cites·16 claims
- 1185US8680570B2Gallium nitride devices with viasINT RECTIFIER CORP·Filed 2013·Granted Mar 25, 2014·4 cites·15 claims
- 1284US8288260B1Field effect transistor with dual etch-stop layers for improved power, performance and reproducibilityHANSON ALLEN W·Filed 2011·Granted Oct 16, 2012·9 cites·20 claims
- 1383US8859400B2Gallium nitride devices with conductive regionsINTERNAT RECTIFER CORP·Filed 2012·Granted Oct 14, 2014·5 cites·20 claims
- 1478US11961888B2Extrinsic field termination structures for improving reliability of high-voltage, high-power active devicesMACOM TECH SOLUTIONS HOLDINGS INC·Filed 2019·Granted Apr 16, 2024·2 cites·20 claims
- 1577US9608102B2Gallium nitride material devices and associated methodsJOHNSON JERRY WAYNE·Filed 2006·Granted Mar 28, 2017·7 cites·22 claims
- 1676US12261207B2Extrinsic field termination structures for improving reliability of high-voltage, high-power active devicesMACOM TECH SOLUTIONS HOLDINGS INC·Filed 2024·Granted Mar 25, 2025·0 cites·20 claims
- 1776US10855230B2FET operational temperature determination by field plate resistance thermometryMACOM TECH SOLUTIONS HOLDINGS INC·Filed 2019·Granted Dec 1, 2020·2 cites·26 claims
- 1876US10790787B2FET operational temperature determination by gate structure resistance thermometryMACOM TECH SOLUTIONS HOLDINGS INC·Filed 2019·Granted Sep 29, 2020·2 cites·36 claims
- 1975US10147642B1Barrier for preventing eutectic break-through in through-substrate viasMACOM TECH SOLUTIONS HOLDINGS INC·Filed 2013·Granted Dec 4, 2018·3 cites·20 claims
- 2071US7569871B2Gallium nitride material transistors and methods associated with the sameNITRONEX CORP·Filed 2008·Granted Aug 4, 2009·3 cites·20 claims
- 2164US9876082B2Transistor with hole barrier layerMACOM TECH SOLUTIONS HOLDINGS INC·Filed 2015·Granted Jan 23, 2018·1 cites·20 claims
- 2261US7994540B2Gallium nitride material transistors and methods associated with the sameINT RECTIFIER CORP·Filed 2009·Granted Aug 9, 2011·1 cites·20 claims
- 2361US6600179B2Power amplifier with base and collector strapsMA COM INC·Filed 2001·Granted Jul 29, 2003·10 cites·52 claims
- 2460US8946765B2Gallium nitride devicesINT RECTIFIER CORP·Filed 2014·Granted Feb 3, 2015·0 cites·15 claims
- 2558US8026581B2Gallium nitride material devices including diamond regions and methods associated with the sameINT RECTIFIER CORP·Filed 2008·Granted Sep 27, 2011·1 cites·3 claims
- 2657US2019028066A1Fet operational temperature determination by field plate resistance thermometryMACOM TECH SOLUTIONS HOLDINGS INC·Filed 2017·Application pending·0 cites
- 2756US11676860B2Barrier for preventing eutectic break-through in through-substrate viasMACOM TECH SOLUTIONS HOLDINGS INC·Filed 2018·Granted Jun 13, 2023·0 cites·20 claims
- 2852US6060402AProcess for selective recess etching of epitaxial field effect transistors with a novel etch-stop layerWHITAKER CORP·Filed 1998·Granted May 9, 2000·16 cites·15 claims
- 2951US8067786B2Gallium nitride material devices including conductive regionsTHERRIEN ROBERT J·Filed 2009·Granted Nov 29, 2011·0 cites·15 claims
- 3051US2018122928A1Iii-nitride semiconductor structures comprising spatially patterned implanted speciesMACOM TECH SOLUTIONS HOLDINGS INC·Filed 2017·Application pending·0 cites
- 3148US2019028065A1Fet operational temperature determination by gate structure resistance thermometryMACOM TECH SOLUTIONS HOLDINGS INC·Filed 2017·Application pending·0 cites
- 3246US11018220B2Device isolation design rules for HAST improvementMACOM TECH SOLUTIONS HOLDINGS INC·Filed 2018·Granted May 25, 2021·0 cites·18 claims
- 3341US2019078941A1Operational temperature determination in bipolar transistors by resistance thermometryMACOM TECH SOLUTIONS HOLDINGS INC·Filed 2017·Application pending·0 cites
- 3439US8288253B1InxGa1-xAsYP1-Y quaternary etch stop for improved chemical resistivity of gallium arsenide field effect transistorsHANSON ALLEN W·Filed 2011·Granted Oct 16, 2012·0 cites·17 claims
- 3536US2005145851A1Gallium nitride material structures including isolation regions and methodsNITRONEX CORP·Filed 2004·Application pending·0 cites
- 3635US2017069500A1Methods of spatially implanting species in iii-nitride semiconductor structuresM/A-COM TECH SOLUTIONS HOLDINGS INC·Filed 2015·Application pending·0 cites
- 3731US6642559B1Structure and process for improving high frequency isolation in semiconductor substratesWHITAKER CORP·Filed 1999·Granted Nov 4, 2003·1 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →