Inventor · disambiguated record
Alexey Heiman
Also filed as: HEIMAN ALEXEY
13 granted patents·61 citations·filing 2006–2020
88Inventor score
Top patents by PatentIndex Score
13 records- 0190US10707120B1SOI devices with air gaps and stressing layersTOWER SEMICONDUCTOR LTD·Filed 2019·Granted Jul 7, 2020·28 cites·19 claims
- 0290US8722496B1Method for making embedded cost-efficient SONOS non-volatile memoryTOWER SEMICONDUCTOR LTD·Filed 2013·Granted May 13, 2014·14 cites·17 claims
- 0371US7400538B2NROM memory device with enhanced enduranceTOWER SEMICONDUCTOR LTD·Filed 2006·Granted Jul 15, 2008·8 cites·12 claims
- 0466US7754559B2Method for fabricating capacitor structures using the first contact metalTOWER SEMICONDUCTOR LTD·Filed 2008·Granted Jul 13, 2010·4 cites·21 claims
- 0565US8501573B2High-resolution integrated X-ray CMOS image sensorROIZIN YAKOV·Filed 2009·Granted Aug 6, 2013·4 cites·16 claims
- 0662US9330979B2LDMOS transistor having elevated field oxide bumps and method of making sameLEVIN SHARON·Filed 2008·Granted May 3, 2016·3 cites·17 claims
- 0757US11374120B2Apparatus, system and method of an electrostatically formed nanowire (EFN)TOWER SEMICONDUCTOR LTD·Filed 2020·Granted Jun 28, 2022·0 cites·17 claims
- 0852US10770573B2Apparatus, system and method of an electrostatically formed nanowire (EFN)TOWER SEMICONDUCTOR LTD·Filed 2018·Granted Sep 8, 2020·0 cites·16 claims
- 0946US9837411B2Semiconductor die with a metal viaTOWER SEMICONDUCTOR LTD·Filed 2015·Granted Dec 5, 2017·0 cites·19 claims
- 1042US10840128B2Semiconductor device having a radio frequency circuit and a method for manufacturing the semiconductor deviceTOWER SEMICONDUCTOR LTD·Filed 2019·Granted Nov 17, 2020·0 cites·18 claims
- 1142US10788375B2Apparatus, system and method of a temperature sensorTOWER SEMICONDUCTOR LTD·Filed 2017·Granted Sep 29, 2020·0 cites·21 claims
- 1240US8722484B2High-K dielectric stack and method of fabricating sameLISIANSKY MICHAEL·Filed 2008·Granted May 13, 2014·0 cites·24 claims
- 1329US10770586B2Stressing structure with low hydrogen content layer over NiSi salicideTOWER SEMICONDUCTOR LTD·Filed 2018·Granted Sep 8, 2020·0 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →