Inventor · disambiguated record
Alexander Kalnitsky
Also filed as: KALNITSKY ALEXANDER
268 granted patents·19 pending applications·3,342 citations·filing 1987–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD160NAT SEMICONDUCTOR CORP46MAXIM INTEGRATED PRODUCTS15INTERSIL INC14SGS THOMSON MICROELECTRONICS14
Top patents by PatentIndex Score
287 records- 0199US11063038B2Through silicon via design for stacking integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 13, 2021·7 cites·20 claims
- 0298US10050033B1High voltage integration for HKMG technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 14, 2018·18 cites·20 claims
- 0398US9923013B1Sensor device, image sensor array and manufacturing method of sensor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 20, 2018·32 cites·17 claims
- 0498US6208557B1EPROM and flash memory cells with source-side injection and a gate dielectric that traps hot electrons during programmingNAT SEMICONDUCTOR CORP·Filed 1999·Granted Mar 27, 2001·220 cites·6 claims
- 0598US5608250AVolatile memory cell with interface charge trapsSGS THOMSON MICROELECTRONICS·Filed 1994·Granted Mar 4, 1997·190 cites·16 claims
- 0697US12048163B2Trench gate high voltage transistor for embedded memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 23, 2024·2 cites·20 claims
- 0797US11854909B2Semiconductor structure and method for manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·2 cites·20 claims
- 0897US10504958B2Semiconductor structure and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·7 cites·20 claims
- 0997US9459234B2CMOS compatible BioFETKALNITSKY ALEXANDER·Filed 2012·Granted Oct 4, 2016·21 cites·16 claims
- 1097US7768273B1Electrostatic discharge protection of a capacitive type fingerprint sensing arrayUPEK INC·Filed 2009·Granted Aug 3, 2010·58 cites·3 claims
- 1196US10157778B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 18, 2018·18 cites·20 claims
- 1296US10134945B1Wafer to wafer bonding techniques for III-V wafers and CMOS wafersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 20, 2018·18 cites·20 claims
- 1395US12211738B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 28, 2025·2 cites·20 claims
- 1495US11823959B2FUSI gated device formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 21, 2023·2 cites·20 claims
- 1595US11029714B2Flipped gate current reference and method of usingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 8, 2021·3 cites·20 claims
- 1695US10043705B2Memory device and method of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 7, 2018·13 cites·20 claims
- 1795US9791406B2CMOS compatible BioFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 17, 2017·5 cites·20 claims
- 1894US12191365B2Thicker corner of a gate dielectric structure around a recessed gate electrode for an MV deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 7, 2025·1 cites·20 claims
- 1994US11901388B2Device over photodetector pixel sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 13, 2024·2 cites·20 claims
- 2094US11735624B2Multi-lateral recessed MIM structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 22, 2023·2 cites·20 claims
- 2194US10629592B2Through silicon via design for stacking integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 21, 2020·7 cites·20 claims
- 2294US9590504B2Flipped gate current reference and method of usingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Mar 7, 2017·10 cites·20 claims
- 2394US5633178AMethod of making volatile memory cell with interface charge trapsSGS THOMSON MICROELECTRONICS·Filed 1995·Granted May 27, 1997·108 cites·8 claims
- 2493US12500193B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 16, 2025·1 cites·20 claims
- 2593US11675383B2Voltage reference circuit and method for providing reference voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 13, 2023·3 cites·20 claims
- 2693US11244857B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 8, 2022·7 cites·20 claims
- 2793US11063157B1Trench capacitor profile to decrease substrate warpageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 13, 2021·6 cites·20 claims
- 2893US10692914B2Implant damage free image sensor and method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 23, 2020·3 cites·20 claims
- 2993US8895993B2Low gate-leakage structure and method for gallium nitride enhancement mode transistorKALNITSKY ALEXANDER·Filed 2011·Granted Nov 25, 2014·15 cites·11 claims
- 3093US8320180B2Multiple time programmable (MTP) PMOS floating gate-based non-volatile memory device for a general purpose CMOS technology with thick gate oxideKALNITSKY ALEXANDER·Filed 2011·Granted Nov 27, 2012·15 cites·25 claims
- 3193US6137723AMemory device having erasable Frohmann-Bentchkowsky EPROM cells that use a well-to-floating gate coupled voltage during erasureNAT SEMICONDUCTOR CORP·Filed 1999·Granted Oct 24, 2000·118 cites·19 claims
- 3292US11705449B2Through silicon via design for stacking integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 18, 2023·1 cites·20 claims
- 3392US10964692B2Through silicon via design for stacking integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 30, 2021·5 cites·20 claims
- 3492US9910009B2CMOS compatible BioFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Mar 6, 2018·3 cites·20 claims
- 3592US9691725B2Integrated semiconductor device and wafer level method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 27, 2017·7 cites·20 claims
- 3692US2025365964A1Trench gate high voltage transistor for embedded memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3791US11476214B2Sidewall spacer to reduce bond pad necking and/or redistribution layer neckingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 18, 2022·2 cites·20 claims
- 3891US10177187B2Implant damage free image sensor and method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 8, 2019·6 cites·20 claims
- 3991US7960766B2Light sensors with infrared suppressionINTERSIL INC·Filed 2010·Granted Jun 14, 2011·7 cites·21 claims
- 4091US7903465B2Memory array of floating gate-based non-volatile memory cellsINTERSIL INC·Filed 2007·Granted Mar 8, 2011·20 cites·10 claims
- 4191US7688627B2Flash memory array of floating gate-based non-volatile memory cellsINTERSIL INC·Filed 2007·Granted Mar 30, 2010·20 cites·15 claims
- 4291US7485486B2Photodiode for multiple wavelength operationINTERSIL INC·Filed 2006·Granted Feb 3, 2009·21 cites·19 claims
- 4391US2025359336A1Multi-function substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4490US12211926B2Method and related apparatus for reducing gate-induced drain leakage in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 28, 2025·1 cites·20 claims
- 4590US7542342B2Multiple time programmable (MTP) PMOS floating gate-based non-volatile memory device for a general-purpose CMOS technology with thick gate oxideINTERSIL INC·Filed 2006·Granted Jun 2, 2009·23 cites·23 claims
- 4690US6081451AMemory device that utilizes single-poly EPROM cells with CMOS compatible programming voltagesNAT SEMICONDUCTOR CORP·Filed 1998·Granted Jun 27, 2000·71 cites·15 claims
- 4789US9666574B1Semiconductor device structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 30, 2017·6 cites·20 claims
- 4889US7755117B2Light sensors with infrared suppressionINTERSIL INC·Filed 2007·Granted Jul 13, 2010·10 cites·10 claims
- 4989US6055185ASingle-poly EPROM cell with CMOS compatible programming voltagesNAT SEMICONDUCTOR CORP·Filed 1998·Granted Apr 25, 2000·68 cites·17 claims
- 5088US12471379B2Multi-function substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 11, 2025·0 cites·20 claims
Showing the top 50 of 287 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →