Inventor · disambiguated record
Alois Krost
Also filed as: KROST ALOIS
9 granted patents·10 pending applications·85 citations·filing 2001–2022
86Inventor score
Top patents by PatentIndex Score
19 records- 0187US7078318B2Method for depositing III-V semiconductor layers on a non-III-V substrateAIXTRON AG·Filed 2004·Granted Jul 18, 2006·42 cites·18 claims
- 0281US12376424B2Nitride semiconductor component and process for its productionAZUR SPACE SOLAR POWER GMBH·Filed 2022·Granted Jul 29, 2025·0 cites·13 claims
- 0380US12364059B2Nitride semiconductor component and process for its productionAZUR SPACE SOLAR POWER GMBH·Filed 2022·Granted Jul 15, 2025·0 cites·6 claims
- 0480US12272761B2Nitride semiconductor component and process for its productionAZUR SPACE SOLAR POWER GMBH·Filed 2022·Granted Apr 8, 2025·0 cites·15 claims
- 0580US7128786B2Process for depositing III-V semiconductor layers on a non-III-V substrateAIXTRON AG·Filed 2004·Granted Oct 31, 2006·25 cites·20 claims
- 0675US9406505B2Nitride semiconductor component and process for its productionDADGAR ARMIN·Filed 2006·Granted Aug 2, 2016·5 cites·20 claims
- 0770US7505150B2Device and method for the measurement of the curvature of a surfaceLAYTEC GMBH·Filed 2006·Granted Mar 17, 2009·10 cites·26 claims
- 0858US7935987B2Epitaxial group III nitride layer on (001)-oriented group IV semiconductorAZZURO SEMICONDUCTORS AG·Filed 2007·Granted May 3, 2011·3 cites·14 claims
- 0957US12125938B2Nitride semiconductor component and process for its productionAZUR SPACE SOLAR POWER GMBH·Filed 2016·Granted Oct 22, 2024·0 cites·17 claims
- 1040US2010133658A1Nitride semiconductor component layer structure on a group iv substrate surfaceDADGAR ARMIN·Filed 2008·Application pending·0 cites
- 1140US2008150085A1Gruppe-iii-nitrid-halbleiterbauelement mit hoch p-leitfahiger schichtDADGAR ARMIN·Filed 2007·Application pending·0 cites
- 1238US2009199763A1Process for the production of gan or aigan crystalsDADGAR ARMIN·Filed 2005·Application pending·0 cites
- 1338US2005025909A1Method for the production of III-V laser componentsFiled 2004·Application pending·0 cites
- 1434US2003111008A1Method for the epitaxy of (indium, aluminum, gallium) nitride on foreign substratesFiled 2001·Application pending·0 cites
- 1534US2003070610A1Method and device for producing group III-N, group III-V-N and metal-nitrogen component structures on Si substratesFiled 2002·Application pending·0 cites
- 1633US2013256697A1Group-iii-nitride based layer structure and semiconductor deviceDADGAR ARMIN·Filed 2011·Application pending·0 cites
- 1732US2008067549A1Semiconductor componentDADGAR ARMIN·Filed 2007·Application pending·0 cites
- 1832US2014001513A1Layer system of a silicon-based support and a heterostructure applied directly onto the supportDADGAR ARMIN·Filed 2011·Application pending·0 cites
- 1931US2012217617A1Semi-Polar Wurtzite Group III Nitride Based Semiconductor Layers and Semiconductor Components Based ThereonDADGAR ARMIN·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →