Inventor · disambiguated record
Alexander Philippou
Also filed as: PHILIPPOU ALEXANDER
33 granted patents·4 pending applications·26 citations·filing 2006–2024
94Inventor score
Top patents by PatentIndex Score
37 records- 0190US10854739B2Method for producing IGBT with dV/dt controllabilityINFINEON TECHNOLOGIES AG·Filed 2020·Granted Dec 1, 2020·2 cites·22 claims
- 0289US10615272B2Method for producing IGBT with dV/dt controllabilityINFINEON TECHNOLOGIES AG·Filed 2018·Granted Apr 7, 2020·4 cites·15 claims
- 0388US9076838B2Insulated gate bipolar transistor with mesa sections between cell trench structures and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2013·Granted Jul 7, 2015·7 cites·15 claims
- 0486US10978560B2Power semiconductor device with dV/dt controllability and low gate chargeINFINEON TECHNOLOGIES AG·Filed 2019·Granted Apr 13, 2021·3 cites·17 claims
- 0582US12034066B2Power semiconductor device having a barrier regionINFINEON TECHNOLOGIES AG·Filed 2023·Granted Jul 9, 2024·0 cites·20 claims
- 0682US11581428B2IGBT with dV/dt controllabilityINFINEON TECHNOLOGIES AG·Filed 2020·Granted Feb 14, 2023·1 cites·19 claims
- 0782US2025081563A1Power Semiconductor Device with dV/dt Controllability and Low Gate ChargeINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 0880US10304952B2Power semiconductor device with dV/dt controllability and cross-trench arrangementINFINEON TECHNOLOGIES AG·Filed 2018·Granted May 28, 2019·2 cites·31 claims
- 0977US12199146B2Power semiconductor device with dV/dt controllability and low gate chargeINFINEON TECHNOLOGIES AG·Filed 2023·Granted Jan 14, 2025·0 cites·17 claims
- 1076US9691887B2Semiconductor device with variable resistive elementINFINEON TECHNOLOGIES AG·Filed 2015·Granted Jun 27, 2017·2 cites·20 claims
- 1173US10840362B2IGBT with dV/dt controllabilityINFINEON TECHNOLOGIES AG·Filed 2018·Granted Nov 17, 2020·1 cites·16 claims
- 1272US11682700B2Power semiconductor device with dV/dt controllability and low gate chargeINFINEON TECHNOLOGIES AG·Filed 2021·Granted Jun 20, 2023·0 cites·13 claims
- 1372US11594621B2Method of processing a power semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2020·Granted Feb 28, 2023·0 cites·27 claims
- 1472US9553179B2Semiconductor device and insulated gate bipolar transistor with barrier structureINFINEON TECHNOLOGIES AG·Filed 2014·Granted Jan 24, 2017·3 cites·24 claims
- 1568US11610986B2Power semiconductor switch having a cross-trench structureINFINEON TECHNOLOGIES AG·Filed 2021·Granted Mar 21, 2023·0 cites·16 claims
- 1661US11075290B2Power semiconductor device having a cross-trench arrangementINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jul 27, 2021·0 cites·18 claims
- 1761US2025194184A1Power Semiconductor Device and Method of Producing a Power Semiconductor DeviceINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 1860US2024304709A1Semiconductor device including trench transistor cell unitsINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 1959US10658457B2Power semiconductor device having an SOI islandINFINEON TECHNOLOGIES AG·Filed 2019·Granted May 19, 2020·0 cites·11 claims
- 2059US9018674B2Reverse conducting insulated gate bipolar transistorWERBER DOROTHEA·Filed 2012·Granted Apr 28, 2015·1 cites·21 claims
- 2158US10930772B2IGBT having a barrier regionINFINEON TECHNOLOGIES AG·Filed 2019·Granted Feb 23, 2021·0 cites·24 claims
- 2254US10439055B2IGBT with dV/dt controllabilityINFINEON TECHNOLOGIES AG·Filed 2018·Granted Oct 8, 2019·0 cites·24 claims
- 2354US10256299B2SOI island in a power semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2017·Granted Apr 9, 2019·0 cites·14 claims
- 2453US10910487B2Power semiconductor device having trench electrodes biased at three different electrical potentials, and method of manufacturing the sameINFINEON TECHNOLOGIES AG·Filed 2019·Granted Feb 2, 2021·0 cites·20 claims
- 2552US11257914B2Semiconductor die, semiconductor device and IGBT moduleINFINEON TECHNOLOGIES AG·Filed 2020·Granted Feb 22, 2022·0 cites·22 claims
- 2652US2024030323A1Power Semiconductor Device and Method of Producing a Power Semiconductor DeviceINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
- 2751US9653568B2Method of manufacturing an insulated gate bipolar transistor with mesa sections between cell trench structuresINFINEON TECHNOLOGIES AG·Filed 2015·Granted May 16, 2017·0 cites·5 claims
- 2849US11742417B2Power semiconductor device including first and second trench structuresINFINEON TECHNOLOGIES AG·Filed 2021·Granted Aug 29, 2023·0 cites·23 claims
- 2949US10347754B2Power semiconductor device with dV/dt controllability through select trench electrode biasing, and method of manufacturing the sameINFINEON TECHNOLOGIES AG·Filed 2017·Granted Jul 9, 2019·0 cites·19 claims
- 3048US11538906B2Diode with structured barrier regionINFINEON TECHNOLOGIES AG·Filed 2020·Granted Dec 27, 2022·0 cites·18 claims
- 3147US11398472B2RC IGBT with an IGBT section and a diode sectionINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jul 26, 2022·0 cites·22 claims
- 3243US10608104B2Trench transistor deviceINFINEON TECHNOLOGIES AG·Filed 2014·Granted Mar 31, 2020·0 cites·26 claims
- 3343US10424645B2Semiconductor device, method for testing a semiconductor device and method for forming a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2017·Granted Sep 24, 2019·0 cites·19 claims
- 3443US10109624B2Semiconductor device comprising transistor cell units with different threshold voltagesINFINEON TECHNOLOGIES AG·Filed 2017·Granted Oct 23, 2018·0 cites·22 claims
- 3542US11114528B2Power transistor with dV/dt controllability and tapered mesasINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Sep 7, 2021·0 cites·21 claims
- 3642US7270922B1Method for determining an edge profile of a volume of a photoresist after a development processINFINEON TECHNOLOGIES AG·Filed 2006·Granted Sep 18, 2007·0 cites·19 claims
- 3736US10096531B2Semiconductor device with sensor potential in the active regionINFINEON TECHNOLOGIES AG·Filed 2015·Granted Oct 9, 2018·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →