Inventor · disambiguated record
Alan R. Reinberg
Also filed as: REINBERG ALAN · REINBERG ALAN R · ZAHORIK LEGAL REPRESENTATIVE R
133 granted patents·14 pending applications·8,630 citations·filing 1975–2009
99Inventor score
Files withMICRON TECHNOLOGY INC132TEXAS INSTRUMENTS INC5PERKIN ELMER CORP4REINBERG ALAN R2GEUSIC JOSEPH E1
Top patents by PatentIndex Score
147 records- 0199US6189582B1Small electrode for a chalcogenide switching device and method for fabricating sameMICRON TECHNOLOGY INC·Filed 1999·Granted Feb 20, 2001·445 cites·16 claims
- 0299US6141248ADRAM and SRAM memory cells with repressed memoryMICRON TECHNOLOGY INC·Filed 1999·Granted Oct 31, 2000·345 cites·83 claims
- 0399US5952671ASmall electrode for a chalcogenide switching device and method for fabricating sameMICRON TECHNOLOGY INC·Filed 1997·Granted Sep 14, 1999·431 cites·15 claims
- 0499US5920788AChalcogenide memory cell with a plurality of chalcogenide electrodesMICRON TECHNOLOGY INC·Filed 1997·Granted Jul 6, 1999·904 cites·25 claims
- 0599US5789277AMethod of making chalogenide memory deviceMICRON TECHNOLOGY INC·Filed 1996·Granted Aug 4, 1998·694 cites·25 claims
- 0699US5789758AChalcogenide memory cell with a plurality of chalcogenide electrodesMICRON TECHNOLOGY INC·Filed 1995·Granted Aug 4, 1998·583 cites·15 claims
- 0798US6483171B1Vertical sub-micron CMOS transistors on (110), (111), (311), (511), and higher order surfaces of bulk, SOI and thin film structures and method of forming sameMICRON TECHNOLOGY INC·Filed 1999·Granted Nov 19, 2002·260 cites·16 claims
- 0898US6356500B1Reduced power DRAM device and methodMICRON TECHNOLOGY INC·Filed 2000·Granted Mar 12, 2002·180 cites·39 claims
- 0998US6316784B1Method of making chalcogenide memory deviceMICRON TECHNOLOGY INC·Filed 1998·Granted Nov 13, 2001·239 cites·11 claims
- 1098US6303956B1Conductive container structures having a dielectric capMICRON TECHNOLOGY INC·Filed 1999·Granted Oct 16, 2001·165 cites·17 claims
- 1198US6261964B1Material removal method for forming a structureMICRON TECHNOLOGY INC·Filed 1998·Granted Jul 17, 2001·309 cites·86 claims
- 1298US5837564AMethod for optimal crystallization to obtain high electrical performance from chalcogenidesMICRON TECHNOLOGY INC·Filed 1995·Granted Nov 17, 1998·385 cites·15 claims
- 1398US5142438ADram cell having a stacked capacitor with a tantalum lower plate, a tantalum oxide dielectric layer, and a silicide buried contactMICRON TECHNOLOGY INC·Filed 1991·Granted Aug 25, 1992·191 cites·14 claims
- 1498US4431898AInductively coupled discharge for plasma etching and resist strippingPERKIN ELMER CORP·Filed 1981·Granted Feb 14, 1984·162 cites·6 claims
- 1598US4200666ASingle component monomer for silicon nitride depositionTEXAS INSTRUMENTS INC·Filed 1978·Granted Apr 29, 1980·118 cites·6 claims
- 1697US6844230B2Methods of forming capacitors and resultant capacitor structuresMICRON TECHNOLOGY INC·Filed 2002·Granted Jan 18, 2005·101 cites·35 claims
- 1797US6414376B1Method and apparatus for reducing isolation stress in integrated circuitsMICRON TECHNOLOGY INC·Filed 1999·Granted Jul 2, 2002·212 cites·35 claims
- 1897US6249460B1Dynamic flash memory cells with ultrathin tunnel oxidesMICRON TECHNOLOGY INC·Filed 2000·Granted Jun 19, 2001·144 cites·68 claims
- 1997US4368092AApparatus for the etching for semiconductor devicesPERKIN ELMER CORP·Filed 1981·Granted Jan 11, 1983·103 cites·7 claims
- 2096US6459138B2Capacitor structuresMICRON TECHNOLOGY INC·Filed 2001·Granted Oct 1, 2002·85 cites·23 claims
- 2196US6456535B2Dynamic flash memory cells with ultra thin tunnel oxidesMICRON TECHNOLOGY INC·Filed 2001·Granted Sep 24, 2002·110 cites·93 claims
- 2296US6403442B1Methods of forming capacitors and resultant capacitor structuresMICRON TECHNOLOGY INC·Filed 1999·Granted Jun 11, 2002·109 cites·18 claims
- 2395US7153775B2Conductive material patterning methodsMICRON TECHNOLOGY INC·Filed 2005·Granted Dec 26, 2006·24 cites·18 claims
- 2495US6960821B2Method and apparatus on (110) surfaces of silicon structures with conduction in the <110> directionMICRON TECHNOLOGY INC·Filed 2003·Granted Nov 1, 2005·58 cites·13 claims
- 2595US6141238ADynamic random access memory (DRAM) cells with repressed ferroelectric memory methods of reading same, and apparatuses including sameMICRON TECHNOLOGY INC·Filed 1999·Granted Oct 31, 2000·133 cites·61 claims
- 2694US6580154B2Method and apparatus on (110) surfaces of silicon structures with conduction in the <110> directionMICRON TECHNOLOGY INC·Filed 2001·Granted Jun 17, 2003·51 cites·21 claims
- 2794US6309975B1Methods of making implanted structuresMICRON TECHNOLOGY INC·Filed 1997·Granted Oct 30, 2001·83 cites·72 claims
- 2893US7102151B2Small electrode for a chalcogenide switching device and method for fabricating sameMICRON TECHNOLOGY INC·Filed 2004·Granted Sep 5, 2006·35 cites·16 claims
- 2993US6599840B2Material removal method for forming a structureMICRON TECHNOLOGY INC·Filed 2002·Granted Jul 29, 2003·54 cites·51 claims
- 3093US5358908AMethod of creating sharp points and other features on the surface of a semiconductor substrateMICRON TECHNOLOGY INC·Filed 1992·Granted Oct 25, 1994·125 cites·22 claims
- 3192US7633801B2Memory in logic cellMICRON TECHNOLOGY INC·Filed 2007·Granted Dec 15, 2009·19 cites·22 claims
- 3292US6777705B2X-point memory cellMICRON TECHNOLOGY INC·Filed 2000·Granted Aug 17, 2004·33 cites·60 claims
- 3392US6461967B2Material removal method for forming a structureMICRON TECHNOLOGY INC·Filed 2001·Granted Oct 8, 2002·44 cites·28 claims
- 3492US6245615B1Method and apparatus on (110) surfaces of silicon structures with conduction in the <110> directionMICRON TECHNOLOGY INC·Filed 1999·Granted Jun 12, 2001·89 cites·23 claims
- 3592US4367114AHigh speed plasma etching systemPERKIN ELMER CORP·Filed 1981·Granted Jan 4, 1983·66 cites·28 claims
- 3691US6284643B1Electrical and thermal contact for use in semiconductor devicesMICRON TECHNOLOGY INC·Filed 2000·Granted Sep 4, 2001·41 cites·24 claims
- 3790US6300199B1Method of defining at least two different field effect transistor channel lengths using differently angled sidewall segments of a channel defining layerMICRON TECHNOLOGY INC·Filed 2000·Granted Oct 9, 2001·45 cites·27 claims
- 3890US5599745AMethod to provide a void between adjacent conducting lines in a semiconductor deviceMICRON TECHNOLOGY INC·Filed 1995·Granted Feb 4, 1997·83 cites·13 claims
- 3988US6265281B1Method for forming dielectric within a recessMICRON TECHNOLOGY INC·Filed 1999·Granted Jul 24, 2001·79 cites·13 claims
- 4087US6596648B2Material removal method for forming a structureMICRON TECHNOLOGY INC·Filed 2002·Granted Jul 22, 2003·27 cites·38 claims
- 4187US6258664B1Methods of forming silicon-comprising materials having roughened outer surfaces, and methods of forming capacitor constructionsMICRON TECHNOLOGY INC·Filed 1999·Granted Jul 10, 2001·68 cites·20 claims
- 4286US6602653B1Conductive material patterning methodsMICRON TECHNOLOGY INC·Filed 2000·Granted Aug 5, 2003·25 cites·47 claims
- 4386US5360992ATwo piece assembly for the selection of pinouts and bond options on a semiconductor deviceMICRON TECHNOLOGY INC·Filed 1994·Granted Nov 1, 1994·92 cites·20 claims
- 4485US6277704B1Microelectronic device fabricating method, method of forming a pair of conductive device components of different base widths from a common deposited conductive layerMICRON TECHNOLOGY INC·Filed 2000·Granted Aug 21, 2001·24 cites·38 claims
- 4585US5460908APhase shifting retical fabrication methodMICRON TECHNOLOGY INC·Filed 1994·Granted Oct 24, 1995·45 cites·16 claims
- 4684US5573837AMasking layer having narrow isolated spacings and the method for forming said masking layer and the method for forming narrow isolated trenches defined by said masking layerMICRON TECHNOLOGY INC·Filed 1995·Granted Nov 12, 1996·71 cites·10 claims
- 4783US7217606B2Method of forming vertical sub-micron CMOS transistors on (110), (111), (311), (511), and higher order surfaces of bulk, soi and thin film structuresMICRON TECHNOLOGY INC·Filed 2002·Granted May 15, 2007·26 cites·7 claims
- 4883US5254218AMasking layer having narrow isolated spacings and the method for forming said masking layer and the method for forming narrow isolated trenches defined by said masking layerMICRON TECHNOLOGY INC·Filed 1992·Granted Oct 19, 1993·85 cites·25 claims
- 4981US6596642B2Material removal method for forming a structureMICRON TECHNOLOGY INC·Filed 2002·Granted Jul 22, 2003·18 cites·21 claims
- 5081US6495395B2Electrical and thermal contact for use in semiconductor devicesMICRON TECHNOLOGY INC·Filed 2001·Granted Dec 17, 2002·19 cites·31 claims
Showing the top 50 of 147 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →