Inventor · disambiguated record
Alexei Sadovnikov
Also filed as: SADOVNIKOV ALEXEI
66 granted patents·20 pending applications·293 citations·filing 2000–2025
98Inventor score
Files withTEXAS INSTRUMENTS INC66NAT SEMICONDUCTOR CORP13BABCOCK JEFFREY A3EL-DIWANY MONIR1FOOTE RICHARD W1
Top patents by PatentIndex Score
86 records- 0196US10163680B1Sinker to buried layer connection region for narrow deep trenchesTEXAS INSTRUMENTS INC·Filed 2017·Granted Dec 25, 2018·16 cites·20 claims
- 0295US10978559B1MOS transistor with folded channel and folded drift regionTEXAS INSTRUMENTS INC·Filed 2020·Granted Apr 13, 2021·5 cites·20 claims
- 0395US9633994B2BICMOS device having commonly defined gate shield in an ED-CMOS transistor and base in a bipolar transistorTEXAS INSTRUMENTS INC·Filed 2016·Granted Apr 25, 2017·11 cites·20 claims
- 0495US7687887B1Method of forming a self-aligned bipolar transistor structure using a selectively grown emitterNAT SEMICONDUCTOR CORP·Filed 2006·Granted Mar 30, 2010·39 cites·20 claims
- 0594US11195958B2Semiconductor device with deep trench isolation and trench capacitorTEXAS INSTRUMENTS INC·Filed 2020·Granted Dec 7, 2021·3 cites·17 claims
- 0693US10269895B2Method for creating the high voltage complementary BJT with lateral collector on bulk substrate with resurf effectTEXAS INSTRUMENTS INC·Filed 2017·Granted Apr 23, 2019·7 cites·16 claims
- 0793US9633995B2Method of forming a gate shield in an ED-CMOS transistor and a base of a bipolar transistor using BICMOS technologiesTEXAS INSTRUMENTS INC·Filed 2016·Granted Apr 25, 2017·7 cites·20 claims
- 0891US9786665B1Dual deep trenches for high voltage isolationTEXAS INSTRUMENTS INC·Filed 2016·Granted Oct 10, 2017·7 cites·23 claims
- 0990US10224402B2Method of improving lateral BJT characteristics in BCD technologyTEXAS INSTRUMENTS INC·Filed 2014·Granted Mar 5, 2019·8 cites·16 claims
- 1090US9741790B2Method for creating the high voltage complementary BJT with lateral collector on bulk substrate with resurf effectTEXAS INSTRUMENTS INC·Filed 2016·Granted Aug 22, 2017·5 cites·9 claims
- 1189US10811543B2Semiconductor device with deep trench isolation and trench capacitorTEXAS INSTRUMENTS INC·Filed 2018·Granted Oct 20, 2020·6 cites·10 claims
- 1288US9306013B2Method of forming a gate shield in an ED-CMOS transistor and a base of a bipolar transistor using BICMOS technologiesTEXAS INSTRUMENTS INC·Filed 2014·Granted Apr 5, 2016·6 cites·1 claims
- 1386US9905428B2Split-gate lateral extended drain MOS transistor structure and processTEXAS INSTRUMENTS INC·Filed 2015·Granted Feb 27, 2018·5 cites·18 claims
- 1486US6964907B1Method of etching a lateral trench under an extrinsic base and improved bipolar transistorNAT SEMICONDUCTOR CORP·Filed 2003·Granted Nov 15, 2005·36 cites·6 claims
- 1581US12327829B2Rugged LDMOS with field plateTEXAS INSTRUMENTS INC·Filed 2022·Granted Jun 10, 2025·1 cites·16 claims
- 1681US9773777B2Low dynamic resistance low capacitance diodesTEXAS INSTRUMENTS INC·Filed 2016·Granted Sep 26, 2017·3 cites·8 claims
- 1781US2025318160A1Vertical deep trench and deep trench island based deep n-type well diode and diode triggered protection deviceTEXAS INSTRUMENTS INC·Filed 2025·Application pending·0 cites
- 1879US12363926B2Vertical deep trench and deep trench island based deep n-type well diode and diode triggered protection deviceTEXAS INSTRUMENTS INC·Filed 2023·Granted Jul 15, 2025·0 cites·20 claims
- 1977US8148799B2Self-aligned bipolar transistor structureEL-DIWANY MONIR·Filed 2010·Granted Apr 3, 2012·6 cites·5 claims
- 2076US8298901B1Method for manufacturing bipolar transistorsFOOTE RICHARD W·Filed 2006·Granted Oct 30, 2012·14 cites·23 claims
- 2175US12211807B2Semiconductor doped region with biased isolated membersTEXAS INSTRUMENTS INC·Filed 2023·Granted Jan 28, 2025·0 cites·19 claims
- 2275US11152505B2Drain extended transistorTEXAS INSTRUMENTS INC·Filed 2018·Granted Oct 19, 2021·2 cites·24 claims
- 2375US7132342B1Method of reducing fringing capacitance in a MOSFETNAT SEMICONDUCTOR CORP·Filed 2004·Granted Nov 7, 2006·20 cites·5 claims
- 2475US2025248080A1False collectors and guard rings for semiconductor devicesTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 2575US2023411501A1Fabricating transistors with implanting dopants at first and second dosages in the collector region to form the base regionTEXAS INSTRUMENTS INC·Filed 2023·Application pending·0 cites
- 2674US6380017B1Polysilicon-edge, base-emitter super self-aligned, low-power, high-frequency bipolar transistor and method of forming the transistorNAT SEMICONDUCTOR CORP·Filed 2001·Granted Apr 30, 2002·20 cites·19 claims
- 2774US2025031445A1Low cost, high performance analog metal oxide semiconductor transistorTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 2874US2024290844A1Carbon, nitrogen and/or fluorine co-implants for low resistance transistorsTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 2973US11094806B2Fabricating transistors with implanting dopants at first and second dosages in the collector region to form the base regionTEXAS INSTRUMENTS INC·Filed 2017·Granted Aug 17, 2021·1 cites·20 claims
- 3073US10522663B2Integrated JFET structure with implanted backgateTEXAS INSTRUMENTS INC·Filed 2018·Granted Dec 31, 2019·1 cites·20 claims
- 3172US6699741B1Single poly bipolar transistor and method that uses a selectively epitaxially grown highly-boron-doped silicon layer as a diffusion source for an extrinsic base regionNAT SEMICONDUCTOR CORP·Filed 2002·Granted Mar 2, 2004·20 cites·17 claims
- 3272US2024290831A1False collectors and guard rings for semiconductor devicesTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 3371US12501633B2Breakdown diodes and methods of making the sameTEXAS INSTRUMENTS INC·Filed 2022·Granted Dec 16, 2025·0 cites·28 claims
- 3471US11791405B2Transistor having an emitter region with a silicide spaced apart from a base contactTEXAS INSTRUMENTS INC·Filed 2021·Granted Oct 17, 2023·0 cites·19 claims
- 3571US11024649B2Integrated circuit with resurf region biasing under buried insulator layersTEXAS INSTRUMENTS INC·Filed 2020·Granted Jun 1, 2021·0 cites·20 claims
- 3670US11869986B2Vertical deep trench and deep trench island based deep n-type well diode and diode triggered protection deviceTEXAS INSTRUMENTS INC·Filed 2021·Granted Jan 9, 2024·0 cites·21 claims
- 3770US6475848B1Polysilicon-edge, low-power, high-frequency bipolar transistor and method of forming the transistorNAT SEMICONDUCTOR CORP·Filed 2001·Granted Nov 5, 2002·14 cites·18 claims
- 3869US12464761B2LOCOS fillet for drain reduced breakdown in high voltage transistorsTEXAS INSTRUMENTS INC·Filed 2022·Granted Nov 4, 2025·0 cites·18 claims
- 3969US12218190B2False collectors and guard rings for semiconductor devicesTEXAS INSTRUMENTS INC·Filed 2022·Granted Feb 4, 2025·0 cites·23 claims
- 4068US2025185283A1Laterally diffused metal-oxide semiconductor (ldmos) transistor with integrated back-gateTEXAS INSTRUMENTS INC·Filed 2025·Application pending·0 cites
- 4167US12136625B2Low cost, high performance analog metal oxide semiconductor transistorTEXAS INSTRUMENTS INC·Filed 2021·Granted Nov 5, 2024·0 cites·21 claims
- 4266US12015054B2False collectors and guard rings for semiconductor devicesTEXAS INSTRUMENTS INC·Filed 2022·Granted Jun 18, 2024·0 cites·22 claims
- 4366US12015057B2Carbon, nitrogen and/or fluorine co-implants for low resistance transistorsTEXAS INSTRUMENTS INC·Filed 2021·Granted Jun 18, 2024·0 cites·17 claims
- 4466US11588019B2Bipolar junction transistor with constricted collector region having high gain and early voltage productTEXAS INSTRUMENTS INC·Filed 2021·Granted Feb 21, 2023·0 cites·18 claims
- 4565US12113128B2DMOS transistor having thick gate oxide and STI and method of fabricatingTEXAS INSTRUMENTS INC·Filed 2021·Granted Oct 8, 2024·0 cites·29 claims
- 4664US11527617B2MOS transistor with folded channel and folded drift regionTEXAS INSTRUMENTS INC·Filed 2021·Granted Dec 13, 2022·0 cites·17 claims
- 4764US10636815B2Integrated circuit with resurf region biasing under buried insulator layersTEXAS INSTRUMENTS INC·Filed 2019·Granted Apr 28, 2020·0 cites·20 claims
- 4863US11081558B2LDMOS with high-k drain STI dielectricTEXAS INSTRUMENTS INC·Filed 2020·Granted Aug 3, 2021·0 cites·22 claims
- 4962US7714355B1Method of controlling the breakdown voltage of BSCRs and BJT clampsNAT SEMICONDUCTOR CORP·Filed 2005·Granted May 11, 2010·2 cites·3 claims
- 5061US12243939B2Laterally diffused metal-oxide semiconductor (LDMOS) transistor with integrated back-gateTEXAS INSTRUMENTS INC·Filed 2021·Granted Mar 4, 2025·0 cites·20 claims
Showing the top 50 of 86 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →