Inventor · disambiguated record
Alexander Suvorov
Also filed as: SUVOROV ALEXANDER · SUVOROV ALEXANDER V
30 granted patents·3 pending applications·852 citations·filing 1994–2023
97Inventor score
Top patents by PatentIndex Score
33 records- 0198US9887287B1Power semiconductor devices having gate trenches with implanted sidewalls and related methodsCREE INC·Filed 2016·Granted Feb 6, 2018·86 cites·22 claims
- 0298US7875537B2High temperature ion implantation of nitride based HEMTsCREE INC·Filed 2007·Granted Jan 25, 2011·85 cites·24 claims
- 0398US5604135AMethod of forming green light emitting diode in silicon carbideCREE RESEARCH INC·Filed 1994·Granted Feb 18, 1997·417 cites·17 claims
- 0496US9929284B1Power schottky diodes having local current spreading layers and methods of forming such devicesCREE INC·Filed 2016·Granted Mar 27, 2018·15 cites·19 claims
- 0596US9768259B2Controlled ion implantation into silicon carbide using channeling and devices fabricated using controlled ion implantation into silicon carbide using channelingCREE INC·Filed 2014·Granted Sep 19, 2017·20 cites·22 claims
- 0694US10892356B2Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the sameCREE INC·Filed 2019·Granted Jan 12, 2021·9 cites·8 claims
- 0794US10867797B2Methods and apparatuses related to shaping wafers fabricated by ion implantationCREE INC·Filed 2019·Granted Dec 15, 2020·12 cites·16 claims
- 0893US11075264B2Super junction power semiconductor devices formed via ion implantation channeling techniques and related methodsCREE INC·Filed 2016·Granted Jul 27, 2021·8 cites·21 claims
- 0993US8823057B2Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devicesSHEPPARD SCOTT T·Filed 2006·Granted Sep 2, 2014·23 cites·43 claims
- 1093US7547897B2High-temperature ion implantation apparatus and methods of fabricating semiconductor devices using high-temperature ion implantationCREE INC·Filed 2006·Granted Jun 16, 2009·21 cites·28 claims
- 1192US9984881B2Methods of fabricating semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devicesCREE INC·Filed 2014·Granted May 29, 2018·10 cites·24 claims
- 1292US9484413B2Methods of forming buried junction devices in silicon carbide using ion implant channeling and silicon carbide devices including buried junctionsCREE INC·Filed 2014·Granted Nov 1, 2016·9 cites·19 claims
- 1390US6107142ASelf-aligned methods of fabricating silicon carbide power devices by implantation and lateral diffusionCREE RESEARCH INC·Filed 1998·Granted Aug 22, 2000·109 cites·46 claims
- 1487US10217824B2Controlled ion implantation into silicon carbide using channeling and devices fabricated using controlled ion implantation into silicon carbide using channelingCREE INC·Filed 2017·Granted Feb 26, 2019·3 cites·31 claims
- 1584US7476594B2Methods of fabricating silicon nitride regions in silicon carbide and resulting structuresCREE INC·Filed 2005·Granted Jan 13, 2009·9 cites·11 claims
- 1682US8080441B2Growing polygonal carbon from photoresistSUVOROV ALEXANDER·Filed 2010·Granted Dec 20, 2011·7 cites·22 claims
- 1780US12477770B2Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the sameWOLFSPEED INC·Filed 2023·Granted Nov 18, 2025·0 cites·38 claims
- 1876US10840334B2Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the sameCREE INC·Filed 2019·Granted Nov 17, 2020·2 cites·21 claims
- 1973US10424660B2Power silicon carbide based MOSFET transistors with improved short circuit capabilities and methods of making such devicesCREE INC·Filed 2017·Granted Sep 24, 2019·1 cites·19 claims
- 2070US10192980B2Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the sameCREE INC·Filed 2017·Granted Jan 29, 2019·1 cites·20 claims
- 2168US11862719B2Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the sameCREE INC·Filed 2020·Granted Jan 2, 2024·0 cites·29 claims
- 2268US11791378B2Superjunction power semiconductor devices formed via ion implantation channeling techniques and related methodsWOLFSPEED INC·Filed 2021·Granted Oct 17, 2023·0 cites·18 claims
- 2366US8049272B2Transistors having implanted channel layers and methods of fabricating the sameCREE INC·Filed 2007·Granted Nov 1, 2011·3 cites·30 claims
- 2462US11164967B2Power silicon carbide based MOSFET transistors with improved short circuit capabilities and methods of making such devicesCREE INC·Filed 2019·Granted Nov 2, 2021·0 cites·20 claims
- 2559US8853065B2Methods for fabricating semiconductor devices having reduced implant contaminationSUVOROV ALEXANDER·Filed 2006·Granted Oct 7, 2014·1 cites·12 claims
- 2659US2021066081A1Methods and apparatuses related to shaping wafers fabricated by ion implantationCREE INC·Filed 2020·Application pending·0 cites
- 2758US10103230B2Methods of forming buried junction devices in silicon carbide using ion implant channeling and silicon carbide devices including buried junctionsCREE INC·Filed 2016·Granted Oct 16, 2018·0 cites·12 claims
- 2857US8008637B2High-temperature ion implantation apparatus and methods of fabricating semiconductor devices using high-temperature ion implantationCREE INC·Filed 2009·Granted Aug 30, 2011·0 cites·20 claims
- 2957US7880172B2Transistors having implanted channels and implanted P-type regions beneath the source regionCREE INC·Filed 2007·Granted Feb 1, 2011·1 cites·42 claims
- 3055US2024421193A1Low Contact Resistance in Semiconductor Devices with Implanted RegionsWOLFSPEED INC·Filed 2023·Application pending·0 cites
- 3147US2011101377A1High temperature ion implantation of nitride based hemtsCREE INC·Filed 2011·Application pending·0 cites
- 3245US8216924B2Methods of fabricating transistors using laser annealing of source/drain regionsSUVOROV ALEXANDER V·Filed 2009·Granted Jul 10, 2012·0 cites·16 claims
- 3340US10541306B2Using a carbon vacancy reduction material to increase average carrier lifetime in a silicon carbide semiconductor deviceOLOUGHLIN MICHAEL JOHN·Filed 2012·Granted Jan 21, 2020·0 cites·31 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →