Inventor · disambiguated record
Alexander Syrkin
Also filed as: SYRKIN ALEXANDER · SYRKIN ALEXANDER L
13 granted patents·1 pending application·163 citations·filing 2000–2021
91Inventor score
Files withOSTENDO TECHNOLOGIES INC6DMITRIEV VLADIMIR A2TECHNOLOGIES AND DEVICES INTER2IVANTSOV VLADIMIR1SPIBERG PHILIPPE1
Top patents by PatentIndex Score
14 records- 0194US7727333B1HVPE apparatus and methods for growth of indium containing materials and materials and structures grown therebyTECHNOLOGIES AND DEVICES INTER·Filed 2007·Granted Jun 1, 2010·21 cites·22 claims
- 0292US9577143B1Backflow reactor liner for protection of growth surfaces and for balancing flow in the growth linerOSTENDO TECHNOLOGIES INC·Filed 2013·Granted Feb 21, 2017·8 cites·22 claims
- 0392US8992684B1Epitaxy reactor internal component geometries for the growth of superior quality group III-nitride materialsOSTENDO TECHNOLOGIES INC·Filed 2013·Granted Mar 31, 2015·7 cites·10 claims
- 0490US6579359B1Method of crystal growth and resulted structuresTECHNOLOGIES AND DEVICES INTER·Filed 2000·Granted Jun 17, 2003·91 cites·24 claims
- 0586US9023673B1Free HCL used during pretreatment and AlGaN growth to control growth layer orientation and inclusionsOSTENDO TECHNOLOGIES INC·Filed 2013·Granted May 5, 2015·8 cites·13 claims
- 0685US11661673B1HVPE apparatus and methods for growing indium nitride and indium nitride materials and structures grown therebyOSTENDO TECHNOLOGIES INC·Filed 2021·Granted May 30, 2023·1 cites·8 claims
- 0785US8647435B1HVPE apparatus and methods for growth of p-type single crystal group III nitride materialsDMITRIEV VLADIMIR A·Filed 2007·Granted Feb 11, 2014·11 cites·12 claims
- 0873US9416464B1Apparatus and methods for controlling gas flows in a HVPE reactorDMITRIEV VLADIMIR A·Filed 2007·Granted Aug 16, 2016·4 cites·15 claims
- 0973US8629065B2Growth of planar non-polar {10-10} M-plane gallium nitride with hydride vapor phase epitaxy (HVPE)SPIBERG PHILIPPE·Filed 2009·Granted Jan 14, 2014·4 cites·1 claims
- 1069US11322652B2Methods for producing composite GaN nanocolumns and light emitting structures made from the methodsOSTENDO TECHNOLOGIES INC·Filed 2016·Granted May 3, 2022·1 cites·22 claims
- 1166US8673074B2Growth of planar non-polar {1 -1 0 0} M-plane and semi-polar {1 1 -2 2} gallium nitride with hydride vapor phase epitaxy (HVPE)USIKOV ALEXANDER·Filed 2009·Granted Mar 18, 2014·4 cites·1 claims
- 1264US9443727B2Semi-polar III-nitride films and materials and method for making the sameOSTENDO TECHNOLOGIES INC·Filed 2014·Granted Sep 13, 2016·1 cites·20 claims
- 1362US8728938B2Method for substrate pretreatment to achieve high-quality III-nitride epitaxyIVANTSOV VLADIMIR·Filed 2012·Granted May 20, 2014·2 cites·21 claims
- 1434US2023407519A1Improved Furnace Apparatus for Crystal ProductionZADIENT TECH SAS·Filed 2021·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Alexander Syrkin files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →