Inventor · disambiguated record
Al F. Tasch, Jr.
Also filed as: CHATTERJEE PALLAB K · FRYE ROBERT C · TASCH AL F · TASCH AL F JR
30 granted patents·811 citations·filing 1974–2000
97Inventor score
Top patents by PatentIndex Score
30 records- 0197US6319799B1High mobility heterojunction transistor and methodUNIV TEXAS·Filed 2000·Granted Nov 20, 2001·160 cites·30 claims
- 0294US4112575AFabrication methods for the high capacity ram cellTEXAS INSTRUMENTS INC·Filed 1976·Granted Sep 12, 1978·57 cites·51 claims
- 0391US4384301AHigh performance submicron metal-oxide-semiconductor field effect transistor device structureTEXAS INSTRUMENTS INC·Filed 1981·Granted May 17, 1983·62 cites·4 claims
- 0489US5393690AMethod of making semiconductor having improved interlevel conductor insulationTEXAS INSTRUMENTS INC·Filed 1993·Granted Feb 28, 1995·69 cites·2 claims
- 0589US4763181AHigh density non-charge-sensing DRAM cellMOTOROLA INC·Filed 1986·Granted Aug 9, 1988·62 cites·17 claims
- 0688US4035906ASilicon gate CCD structureTEXAS INSTRUMENTS INC·Filed 1976·Granted Jul 19, 1977·35 cites·16 claims
- 0783US4047215AUniphase charge coupled devicesTEXAS INSTRUMENTS INC·Filed 1975·Granted Sep 6, 1977·27 cites·9 claims
- 0883US3944849ACharge transfer device signal processingTEXAS INSTRUMENTS INC·Filed 1974·Granted Mar 16, 1976·28 cites·20 claims
- 0978US4354896AFormation of submicron substrate elementTEXAS INSTRUMENTS INC·Filed 1980·Granted Oct 19, 1982·44 cites·22 claims
- 1078US4153904ASemiconductor device having a high breakdown voltage junction characteristicTEXAS INSTRUMENTS INC·Filed 1977·Granted May 8, 1979·31 cites·14 claims
- 1175US4268950APost-metal ion implant programmable MOS read only memoryTEXAS INSTRUMENTS INC·Filed 1978·Granted May 26, 1981·28 cites·10 claims
- 1271US4356040ASemiconductor device having improved interlevel conductor insulationTEXAS INSTRUMENTS INC·Filed 1980·Granted Oct 26, 1982·32 cites·7 claims
- 1371US4355454ACoating device with As2 -O3 -SiO2TEXAS INSTRUMENTS INC·Filed 1981·Granted Oct 26, 1982·22 cites·4 claims
- 1465US4228445ADual plane well-type two-phase ccdTEXAS INSTRUMENTS INC·Filed 1977·Granted Oct 14, 1980·14 cites·8 claims
- 1562US4455738ASelf-aligned gate method for making MESFET semiconductorTEXAS INSTRUMENTS INC·Filed 1981·Granted Jun 26, 1984·24 cites·3 claims
- 1659US4027382ASilicon gate CCD structureTEXAS INSTRUMENTS INC·Filed 1976·Granted Jun 7, 1977·11 cites·5 claims
- 1758US4553316ASelf-aligned gate method for making MESFET semiconductorTEXAS INSTRUMENTS INC·Filed 1984·Granted Nov 19, 1985·14 cites·2 claims
- 1857US5202574ASemiconductor having improved interlevel conductor insulationTEXAS INSTRUMENTS INC·Filed 1992·Granted Apr 13, 1993·15 cites·2 claims
- 1954US4167017ACCD structures with surface potential asymmetry beneath the phase electrodesTEXAS INSTRUMENTS INC·Filed 1977·Granted Sep 4, 1979·9 cites·4 claims
- 2053US4319260AMultilevel interconnect system for high density silicon gate field effect transistorsTEXAS INSTRUMENTS INC·Filed 1979·Granted Mar 9, 1982·8 cites·4 claims
- 2152US4227202ADual plane barrier-type two-phase CCDTEXAS INSTRUMENTS INC·Filed 1977·Granted Oct 7, 1980·11 cites·8 claims
- 2252US4027381ASilicon gate ccd structureTEXAS INSTRUMENTS INC·Filed 1976·Granted Jun 7, 1977·8 cites·4 claims
- 2347US4272303AMethod of making post-metal ion beam programmable MOS read only memoryTEXAS INSTRUMENTS INC·Filed 1979·Granted Jun 9, 1981·10 cites·17 claims
- 2446US4591891APost-metal electron beam programmable MOS read only memoryTEXAS INSTRUMENTS INC·Filed 1978·Granted May 27, 1986·8 cites·9 claims
- 2546US4152779AMOS ram cell having improved refresh timeTEXAS INSTRUMENTS INC·Filed 1978·Granted May 1, 1979·4 cites·14 claims
- 2640US4328511ATaper isolated ram cell without gate oxideTEXAS INSTRUMENTS INC·Filed 1979·Granted May 4, 1982·4 cites·9 claims
- 2738US4024563ADoped oxide buried channel charge-coupled deviceTEXAS INSTRUMENTS INC·Filed 1975·Granted May 17, 1977·6 cites·6 claims
- 2837US4373165AVery high density punch-through read-only-memoryTEXAS INSTRUMENTS INC·Filed 1981·Granted Feb 8, 1983·5 cites·7 claims
- 2937US4203125ABuried storage punch through dynamic ram cellTEXAS INSTRUMENTS INC·Filed 1978·Granted May 13, 1980·3 cites·8 claims
- 3027US5026575AGrowth of polycrystalline CaF2 via low temperature OMCVDUNIV TEXAS·Filed 1989·Granted Jun 25, 1991·0 cites·29 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →