Inventor · disambiguated record
Alexander Usikov
Also filed as: USIKOV ALEXANDER
8 granted patents·87 citations·filing 2002–2021
86Inventor score
Files withDMITRIEV VLADIMIR A2OSTENDO TECHNOLOGIES INC2SPIBERG PHILIPPE1TECHNOLOGIES AND DEVICES INTER1TECHNOLOGIES AND DEVILES INTER1
Top patents by PatentIndex Score
8 records- 0194US7727333B1HVPE apparatus and methods for growth of indium containing materials and materials and structures grown therebyTECHNOLOGIES AND DEVICES INTER·Filed 2007·Granted Jun 1, 2010·21 cites·22 claims
- 0286US9023673B1Free HCL used during pretreatment and AlGaN growth to control growth layer orientation and inclusionsOSTENDO TECHNOLOGIES INC·Filed 2013·Granted May 5, 2015·8 cites·13 claims
- 0385US11661673B1HVPE apparatus and methods for growing indium nitride and indium nitride materials and structures grown therebyOSTENDO TECHNOLOGIES INC·Filed 2021·Granted May 30, 2023·1 cites·8 claims
- 0485US8647435B1HVPE apparatus and methods for growth of p-type single crystal group III nitride materialsDMITRIEV VLADIMIR A·Filed 2007·Granted Feb 11, 2014·11 cites·12 claims
- 0578US6890809B2Method for fabricating a P-N heterojunction device utilizing HVPE grown III-V compound layers and resultant deviceTECHNOLOGIES AND DEVILES INTER·Filed 2002·Granted May 10, 2005·34 cites·29 claims
- 0673US9416464B1Apparatus and methods for controlling gas flows in a HVPE reactorDMITRIEV VLADIMIR A·Filed 2007·Granted Aug 16, 2016·4 cites·15 claims
- 0773US8629065B2Growth of planar non-polar {10-10} M-plane gallium nitride with hydride vapor phase epitaxy (HVPE)SPIBERG PHILIPPE·Filed 2009·Granted Jan 14, 2014·4 cites·1 claims
- 0866US8673074B2Growth of planar non-polar {1 -1 0 0} M-plane and semi-polar {1 1 -2 2} gallium nitride with hydride vapor phase epitaxy (HVPE)USIKOV ALEXANDER·Filed 2009·Granted Mar 18, 2014·4 cites·1 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →