Inventor · disambiguated record
Amélie Dussaigne
Also filed as: DUSSAIGNE AMELIE · DUSSAIGNE AMÉLIE
15 granted patents·10 pending applications·21 citations·filing 2012–2025
86Inventor score
Files withCOMMISSARIAT ENERGIE ATOMIQUE20Aledia2COMMISSARIAT A IENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES1COMMISSARIAT L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES1COMMISSARIAT À I ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES1
Top patents by PatentIndex Score
25 records- 0188US9728680B2Optoelectronic device comprising microwires or nanowiresCommissariat à l'Energie Atomique et aux Energies Alternatives·Filed 2013·Granted Aug 8, 2017·9 cites·20 claims
- 0284US9331233B2Method for manufacturing a semiconductor micro- or nano-wire, semiconductor structure comprising such a micro- or nano-wire, and method for manufacturing a semiconductor structureCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2012·Granted May 3, 2016·6 cites·12 claims
- 0378US9245948B2Optoelectric device with semiconductor microwires or nanowires and method for manufacturing the sameAledia·Filed 2013·Granted Jan 26, 2016·5 cites·11 claims
- 0472US2025318322A1Method for manufacturing a substrate comprising a relaxed ingan layer and substrate thus obtained for the resumption of growth of a led structureCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2025·Application pending·0 cites
- 0568US2023361246A1Method for manufacturing a substrate comprising a relaxed ingan layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2023·Application pending·0 cites
- 0668US2023369541A1Process for manufacturing a relaxed gan/ingan structureCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2023·Application pending·0 cites
- 0765US12342661B2Method for manufacturing a substrate comprising a relaxed InGAN layer and substrate thus obtained for the resumption of growth of a LED structureCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2022·Granted Jun 24, 2025·0 cites·10 claims
- 0862US11749779B2Process for manufacturing a relaxed GaN/InGaN structureCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Sep 5, 2023·0 cites·14 claims
- 0962US10510535B2Optoelectronic device comprising three-dimensional semiconductor elements, and method for manufacturing said deviceAledia·Filed 2016·Granted Dec 17, 2019·1 cites·12 claims
- 1060US2024186444A1Method for manufacturing, by differentiated electrochemical porosification, a growth substrate including mesas having various porosification levelsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2023·Application pending·0 cites
- 1159US11735693B2Method for manufacturing a substrate comprising a relaxed InGaN layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Aug 22, 2023·0 cites·15 claims
- 1257US2025263865A1Process for producing a crystalline layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2024·Application pending·0 cites
- 1356US12408491B2Method for manufacturing a native emission matrix having doped and porosified In(x)GaNCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2022·Granted Sep 2, 2025·0 cites·5 claims
- 1456US11162188B2Method for producing a crystalline layer in a III-N compound by van der Waals epitaxy from grapheneCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2018·Granted Nov 2, 2021·0 cites·10 claims
- 1555US2024153986A1Growth substrate of a diode array, including mesas having different porosification levelsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2023·Application pending·0 cites
- 1655US2024203731A1Method of manufacturing an electronic deviceCOMMISSARIAT A IENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES·Filed 2023·Application pending·0 cites
- 1755US2024213398A1Method for manufacturing a growth substrate including mesas of various deformabilities, by etching and electrochemical porosificationCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2023·Application pending·0 cites
- 1852US2024297204A1Method for producing a native emission matrixCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2022·Application pending·0 cites
- 1948US11495710B2Method for producing a patterned layer of materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Nov 8, 2022·0 cites·23 claims
- 2047US11424386B2Multi-color light-emitting device and method of manufacturing such a deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Granted Aug 23, 2022·0 cites·12 claims
- 2145US10886429B2Method of manufacturing an optoelectronic device by transferring a conversion structure onto an emission structureCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2018·Granted Jan 5, 2021·0 cites·15 claims
- 2242US10559713B2Multiple quantum well light-emitting deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Feb 11, 2020·0 cites·12 claims
- 2342US10153393B2Light emitting diode of which an active area comprises layers of innCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2014·Granted Dec 11, 2018·0 cites·12 claims
- 2438US10615299B2Optoelectronic device with three-dimensional semiconductor elementsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted Apr 7, 2020·0 cites·12 claims
- 2533US2017365737A1Optoelectronic device comprising three-dimensional semiconductor elements and method for the production thereofCommissariat à I'énergie atomique et aux énergies alternatives·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →