Inventor · disambiguated record
Andrew A. Allerman
Also filed as: ALLERMAN ANDREW · ALLERMAN ANDREW A
19 granted patents·619 citations·filing 1997–2022
95Inventor score
Files withSANDIA CORP12NAT TECH & ENG SOLUTIONS SANDIA LLC4STC UNM1UNM RAINFOREST INNOVATIONS1WIERER JR JONATHAN J1
Top patents by PatentIndex Score
19 records- 0197US6252287B1InGaAsN/GaAs heterojunction for multi-junction solar cellsSANDIA CORP·Filed 1999·Granted Jun 26, 2001·283 cites·24 claims
- 0295US10388753B1Regrowth method for fabricating wide-bandgap transistors, and devices made therebyNAT TECH & ENG SOLUTIONS SANDIA LLC·Filed 2018·Granted Aug 20, 2019·21 cites·6 claims
- 0394US6393038B1Frequency-doubled vertical-external-cavity surface-emitting laserSANDIA CORP·Filed 1999·Granted May 21, 2002·132 cites·38 claims
- 0493US9196788B1High extraction efficiency ultraviolet light-emitting diodeSANDIA CORP·Filed 2014·Granted Nov 24, 2015·15 cites·14 claims
- 0590US7915626B1Aluminum nitride transitional layer for reducing dislocation density and cracking of AIGan epitaxial filmsSANDIA CORP·Filed 2006·Granted Mar 29, 2011·17 cites·10 claims
- 0688US8895335B1Impurity-induced disorder in III-nitride materials and devicesWIERER JR JONATHAN J·Filed 2012·Granted Nov 25, 2014·9 cites·11 claims
- 0785US6365428B1Embedded high-contrast distributed grating structuresSANDIA CORP·Filed 2000·Granted Apr 2, 2002·34 cites·20 claims
- 0884US9059356B1Laterally injected light-emitting diode and laser diodeSANDIA CORP·Filed 2014·Granted Jun 16, 2015·7 cites·25 claims
- 0980US9368677B2Selective layer disordering in III-nitrides with a capping layerSANDIA CORP·Filed 2014·Granted Jun 14, 2016·4 cites·18 claims
- 1077US5995529AInfrared light sources with semimetal electron injectionSANDIA CORP·Filed 1997·Granted Nov 30, 1999·68 cites·46 claims
- 1175US8349633B1Aluminum nitride transitional layer for reducing dislocation density and cracking of AlGaN epitaxial filmsSANDIA CORP·Filed 2009·Granted Jan 8, 2013·4 cites·19 claims
- 1266US11715635B2Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectrochemical etchingUNM RAINFOREST INNOVATIONS·Filed 2021·Granted Aug 1, 2023·0 cites·22 claims
- 1365US9595616B1Vertical III-nitride thin-film power diodeSANDIA CORP·Filed 2015·Granted Mar 14, 2017·1 cites·26 claims
- 1462US9917149B1Diode and method of making the sameNAT TECH & ENG SOLUTIONS SANDIA LLC·Filed 2016·Granted Mar 13, 2018·1 cites·20 claims
- 1559US11177126B2Removing or preventing dry etch-induced damage in Al/In/GaN films by photoelectrochemical etchingSTC UNM·Filed 2019·Granted Nov 16, 2021·0 cites·20 claims
- 1658US10553697B1Regrowth method for fabricating wide-bandgap transistors, and devices made therebyNAT TECH & ENG SOLUTIONS SANDIA LLC·Filed 2019·Granted Feb 4, 2020·0 cites·16 claims
- 1754US12218255B2High voltage gallium nitride vertical PN diodeNAT TECH & ENG SOLUTIONS SANDIA LLC·Filed 2022·Granted Feb 4, 2025·0 cites·10 claims
- 1847US6248992B1High gain photoconductive semiconductor switch having tailored doping profile zonesSANDIA CORP·Filed 1999·Granted Jun 19, 2001·15 cites·16 claims
- 1939US6071109AMethod of making AlInSb by metal-organic chemical vapor depositionSANDIA CORP·Filed 1999·Granted Jun 6, 2000·8 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →