Inventor · disambiguated record
Ann Concannon
Also filed as: CONCANNON ANN · CONCANNON ANN MARGARET
38 granted patents·2 pending applications·370 citations·filing 2000–2022
97Inventor score
Top patents by PatentIndex Score
40 records- 0193US9633991B2Mutual ballasting multi-finger bidirectional ESD deviceTEXAS INSTRUMENTS INC·Filed 2015·Granted Apr 25, 2017·5 cites·29 claims
- 0290US11527530B2Electrostatic discharge protection systemTEXAS INSTRUMENTS INC·Filed 2021·Granted Dec 13, 2022·3 cites·30 claims
- 0386US9224724B2Mutual ballasting multi-finger bidirectional ESD deviceTEXAS INSTRUMENTS INC·Filed 2013·Granted Dec 29, 2015·5 cites·18 claims
- 0486US6310799B2Negative resistance deviceNAT UNIV IRELAND CORK·Filed 2000·Granted Oct 30, 2001·61 cites·14 claims
- 0584US7268398B1ESD protection cell with active pwell resistance controlNAT SEMICONDUCTOR CORP·Filed 2006·Granted Sep 11, 2007·10 cites·12 claims
- 0684US6784029B1Bi-directional ESD protection structure for BiCMOS technologyNAT SEMICONDUCTOR CORP·Filed 2002·Granted Aug 31, 2004·35 cites·4 claims
- 0783US10763251B2ESD network comprising variable impedance discharge pathTEXAS INSTRUMENTS INC·Filed 2017·Granted Sep 1, 2020·4 cites·23 claims
- 0878US6906357B1Electrostatic discharge (ESD) protection structure with symmetrical positive and negative ESD protectionNAT SEMICONDUCTOR CORP·Filed 2003·Granted Jun 14, 2005·25 cites·6 claims
- 0978US6717219B1High holding voltage ESD protection structure for BiCMOS technologyNAT SEMICONDUCTOR CORP·Filed 2002·Granted Apr 6, 2004·24 cites·3 claims
- 1077US7056761B1Avalanche diode with breakdown voltage controlled by gate lengthNAT SEMICONDUCTOR CORP·Filed 2003·Granted Jun 6, 2006·26 cites·7 claims
- 1177US7023029B1Complementary vertical SCRs for SOI and triple well processesNAT SEMICONDUCTOR CORP·Filed 2002·Granted Apr 4, 2006·23 cites·6 claims
- 1270US9633990B2Bi-directional ESD protection deviceTEXAS INSTRUMENTS INC·Filed 2016·Granted Apr 25, 2017·1 cites·8 claims
- 1369US6822294B1High holding voltage LVTSCRNAT SEMICONDUCTOR CORP·Filed 2001·Granted Nov 23, 2004·14 cites·6 claims
- 1469US6720624B1LVTSCR-like structure with internal emitter injection controlNAT SEMICONDUCTOR CORP·Filed 2002·Granted Apr 13, 2004·14 cites·16 claims
- 1568US6894881B1ESD protection methods and devices using additional terminal in the diode structuresNAT SEMICONDUCTOR CORP·Filed 2002·Granted May 17, 2005·13 cites·8 claims
- 1667US10163888B2Self-biased bidirectional ESD protection circuitTEXAS INSTRUMENTS INC·Filed 2016·Granted Dec 25, 2018·1 cites·21 claims
- 1766US6946690B1High holding voltage ESD protection structure and methodNAT SEMICONDUCTOR CORP·Filed 2001·Granted Sep 20, 2005·13 cites·3 claims
- 1865US7027278B1Stacked high-voltage ESD protection clamp with triggering voltage circuit controlNAT SEMICONDUCTOR CORP·Filed 2004·Granted Apr 11, 2006·11 cites·2 claims
- 1963US10749336B2ESD protection circuit with passive trigger voltage controlled shut-offTEXAS INSTRUMENTS INC·Filed 2016·Granted Aug 18, 2020·1 cites·20 claims
- 2061US7057215B1PMOS based LVTSCR and IGBT-like structureNAT SEMICONDUCTOR CORP·Filed 2002·Granted Jun 6, 2006·9 cites·5 claims
- 2161US6690069B1Low voltage complement ESD protection structuresNAT SEMICONDUCTOR CORP·Filed 2002·Granted Feb 10, 2004·9 cites·14 claims
- 2259US6841829B1Self protecting bipolar SCRNAT SEMICONDUCTOR CORP·Filed 2003·Granted Jan 11, 2005·8 cites·7 claims
- 2358US9397085B2Bi-directional ESD protection deviceTEXAS INSTRUMENTS INC·Filed 2014·Granted Jul 19, 2016·0 cites·17 claims
- 2457US7929262B1Method and structure for avoiding hot carrier degradation and soft leakage damage to ESD protection circuitNAT SEMICONDUCTOR CORP·Filed 2001·Granted Apr 19, 2011·7 cites·7 claims
- 2557US7387918B1Method of forming a silicon controlled rectifier structure with improved punch through resistanceNAT SEMICONDUCTOR CORP·Filed 2006·Granted Jun 17, 2008·1 cites·20 claims
- 2657US6660602B1Stand-alone triggering structure for ESD protection of high voltage CMOSNAT SEMICONDUCTOR CORP·Filed 2002·Granted Dec 9, 2003·7 cites·10 claims
- 2756US11239229B2Self-biased bidirectional ESD protection circuitTEXAS INSTRUMENTS INC·Filed 2018·Granted Feb 1, 2022·0 cites·20 claims
- 2855US6911679B1LVTSCR with compact designNAT SEMICONDUCTOR CORP·Filed 2003·Granted Jun 28, 2005·6 cites·25 claims
- 2955US6853053B1BJT based ESD protection structure with improved current stabilityNAT SEMICONDUCTOR CORP·Filed 2003·Granted Feb 8, 2005·6 cites·2 claims
- 3053US6970335B1LVTSCR ESD protection clamp with dynamically controlled blocking junctionNAT SEMICONDUCTOR CORP·Filed 2003·Granted Nov 29, 2005·5 cites·15 claims
- 3150US7193251B1ESD protection cluster and method of providing multi-port ESD protectionNAT SEMICONDUCTOR CORP·Filed 2003·Granted Mar 20, 2007·4 cites·9 claims
- 3250US6952039B1ESD protection snapback structure for overvoltage self-protecting I/O cellsNAT SEMICONDUCTOR CORP·Filed 2003·Granted Oct 4, 2005·4 cites·8 claims
- 3350US6933588B1High performance SCR-like BJT ESD protection structureNAT SEMICONDUCTOR CORP·Filed 2002·Granted Aug 23, 2005·4 cites·9 claims
- 3449US2023238378A1Semiconductor protection devices with high area efficiencyTEXAS INSTRUMENTS INC·Filed 2022·Application pending·0 cites
- 3548US11271392B2Protection circuit for signal processorTEXAS INSTRUMENTS INC·Filed 2019·Granted Mar 8, 2022·0 cites·19 claims
- 3648US6998651B1LVTSCR-like structure with blocking junction under the polygateNAT SEMICONDUCTOR CORP·Filed 2003·Granted Feb 14, 2006·5 cites·14 claims
- 3747US7741190B2Method of selective oxygen implantation to dielectrically isolate semiconductor devices using no extra masksNAT SEMICONDUCTOR CORP·Filed 2007·Granted Jun 22, 2010·0 cites·5 claims
- 3847US7064397B1Silicon controlled rectifier structure with improved punch through resistanceNAT SEMICONDUCTOR CORP·Filed 2003·Granted Jun 20, 2006·3 cites·20 claims
- 3944US7115951B1Low triggering voltage ESD protection structure and method for reducing the triggering voltageNAT SEMICONDUCTOR CORP·Filed 2002·Granted Oct 3, 2006·3 cites·6 claims
- 4042US2010190316A1Method of selective oxygen implantation to dielectricallly isolate semiconductor devices using no extra masksNAT SEMICONDUCTOR CORP·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →