Inventor · disambiguated record
Andrea Corrion
Also filed as: CORRION ANDREA
24 granted patents·2 pending applications·222 citations·filing 2010–2023
96Inventor score
Top patents by PatentIndex Score
26 records- 0197US8470652B1Monolithic integration of group III nitride enhancement layersBROWN DAVID F·Filed 2011·Granted Jun 25, 2013·27 cites·7 claims
- 0295US9954090B1Monolithic integration of group III nitride epitaxial layersHRL LAB LLC·Filed 2016·Granted Apr 24, 2018·8 cites·6 claims
- 0395US9142626B1Stepped field plate wide bandgap field-effect transistor and methodHRL LAB LLC·Filed 2013·Granted Sep 22, 2015·18 cites·15 claims
- 0494US8383471B1Self aligned sidewall gate GaN HEMTHRL LAB LLC·Filed 2011·Granted Feb 26, 2013·28 cites·27 claims
- 0592US9496197B1Near junction cooling for GaN devicesMICOVIC MIROSLAV·Filed 2014·Granted Nov 15, 2016·16 cites·13 claims
- 0691US9202880B1Etch-based fabrication process for stepped field-plate wide-bandgapHRL LAB LLC·Filed 2013·Granted Dec 1, 2015·10 cites·16 claims
- 0791US8748244B1Enhancement and depletion mode GaN HMETs on the same substrateCORRION ANDREA·Filed 2012·Granted Jun 10, 2014·15 cites·6 claims
- 0890US8686473B1Apparatus and method for reducing the interface resistance in GaN heterojunction FETsMICOVIC MIROSLAV·Filed 2010·Granted Apr 1, 2014·14 cites·11 claims
- 0990US8653559B2AlGaN/GaN hybrid MOS-HFETCORRION ANDREA·Filed 2011·Granted Feb 18, 2014·19 cites·24 claims
- 1089US10418473B1Monolithic integration of group III nitride epitaxial layersHRL LAB LLC·Filed 2018·Granted Sep 17, 2019·3 cites·9 claims
- 1189US10217648B1Fabrication of microfluidic channels in diamondHRL LAB LLC·Filed 2017·Granted Feb 26, 2019·8 cites·20 claims
- 1287US9929243B1Stepped field plate wide bandgap field-effect transistor and methodHRL LAB LLC·Filed 2015·Granted Mar 27, 2018·4 cites·17 claims
- 1387US9419122B1Etch-based fabrication process for stepped field-plate wide-bandgapHRL LAB LLC·Filed 2015·Granted Aug 16, 2016·4 cites·7 claims
- 1487US8558281B1Gate metallization methods for self-aligned sidewall gate GaN HEMTREGAN DEAN C·Filed 2011·Granted Oct 15, 2013·15 cites·10 claims
- 1586US9490357B2Vertical III-nitride semiconductor device with a vertically formed two dimensional electron gasHRL LAB LLC·Filed 2014·Granted Nov 8, 2016·7 cites·12 claims
- 1686US8980759B1Method of fabricating slanted field-plate GaN heterojunction field-effect transistorHRL LAB LLC·Filed 2014·Granted Mar 17, 2015·7 cites·23 claims
- 1785US9252247B1Apparatus and method for reducing the interface resistance in GaN Heterojunction FETsHRL LAB LLC·Filed 2014·Granted Feb 2, 2016·6 cites·15 claims
- 1882US12230702B2Self-passivated nitrogen-polar III-nitride transistorHRL LAB LLC·Filed 2023·Granted Feb 18, 2025·1 cites·14 claims
- 1980US8698201B1Gate metallization methods for self-aligned sidewall gate GaN HEMTHRL LAB LLC·Filed 2013·Granted Apr 15, 2014·5 cites·15 claims
- 2079US10714605B2Highly scaled linear GaN HEMT StructuresHRL LAB LLC·Filed 2018·Granted Jul 14, 2020·2 cites·26 claims
- 2178US8796736B1Monolithic integration of group III nitride epitaxial layersHRL LAB LLC·Filed 2013·Granted Aug 5, 2014·2 cites·5 claims
- 2271US9378949B1Monolithic integration of group III nitride epitaxial layersHRL LAB LLC·Filed 2014·Granted Jun 28, 2016·1 cites·7 claims
- 2368US8766321B2Self-aligned sidewall gate GaN HEMTHRL LAB·Filed 2012·Granted Jul 1, 2014·2 cites·6 claims
- 2451US10325997B2Vertical III-nitride semiconductor device with a vertically formed two dimensional electron gasHRL LAB LLC·Filed 2016·Granted Jun 18, 2019·0 cites·12 claims
- 2550US2022069114A1Self-passivated nitrogen-polar iii-nitride transistorHRL LAB LLC·Filed 2021·Application pending·0 cites
- 2639US2013328061A1Normally-off gallium nitride transistor with insulating gate and method of making the sameCHU RONGMING·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →