Inventor · disambiguated record
Andrew P. Cowley
Also filed as: COWLEY ANDREW · COWLEY ANDREW P
15 granted patents·4 pending applications·263 citations·filing 2000–2009
92Inventor score
Top patents by PatentIndex Score
19 records- 0199US7397260B2Structure and method for monitoring stress-induced degradation of conductive interconnectsIBM·Filed 2005·Granted Jul 8, 2008·169 cites·12 claims
- 0287US7598616B2Interconnect structureIBM·Filed 2008·Granted Oct 6, 2009·11 cites·12 claims
- 0386US7335588B2Interconnect structure and method of fabrication of sameIBM·Filed 2005·Granted Feb 26, 2008·12 cites·17 claims
- 0480US7122462B2Back end interconnect with a shaped interfaceINFINEON TECHNOLOGIES AG·Filed 2003·Granted Oct 17, 2006·25 cites·5 claims
- 0579US7830019B2Via bottom contact and method of manufacturing sameIBM·Filed 2009·Granted Nov 9, 2010·7 cites·20 claims
- 0678US6278147B1On-chip decoupling capacitor with bottom hardmaskIBM·Filed 2000·Granted Aug 21, 2001·19 cites·6 claims
- 0770US7639032B2Structure for monitoring stress-induced degradation of conductive interconnectsIBM·Filed 2007·Granted Dec 29, 2009·2 cites·7 claims
- 0869US8053257B2Method for prediction of premature dielectric breakdown in a semiconductorIBM·Filed 2008·Granted Nov 8, 2011·5 cites·11 claims
- 0965US7528493B2Interconnect structure and method of fabrication of sameIBM·Filed 2007·Granted May 5, 2009·2 cites·1 claims
- 1064US6387754B2Method of forming an on-chip decoupling capacitor with bottom hardmaskIBM·Filed 2001·Granted May 14, 2002·8 cites·14 claims
- 1163US7585764B2VIA bottom contact and method of manufacturing sameIBM·Filed 2005·Granted Sep 8, 2009·2 cites·16 claims
- 1261US7563710B2Method of fabrication of interconnect structuresIBM·Filed 2007·Granted Jul 21, 2009·1 cites·25 claims
- 1357US7692439B2Structure for modeling stress-induced degradation of conductive interconnectsIBM·Filed 2008·Granted Apr 6, 2010·0 cites·6 claims
- 1449US7494915B2Back end interconnect with a shaped interfaceIBM·Filed 2006·Granted Feb 24, 2009·0 cites·7 claims
- 1542US2007059922A1Post-etch removal of fluorocarbon-based residues from a hybrid dielectric structureIBM·Filed 2005·Application pending·0 cites
- 1641US2006281338A1Method for prediction of premature dielectric breakdown in a semiconductorIBM·Filed 2005·Application pending·0 cites
- 1740US7001835B2Crystallographic modification of hard mask propertiesINFINEON TECHNOLOGIES AG·Filed 2003·Granted Feb 21, 2006·0 cites·10 claims
- 1836US2004058526A1Via liner integration to avoid resistance shift and resist mechanical stressINFINEON TECHNOLOGIES CORP·Filed 2002·Application pending·0 cites
- 1935US2003042580A1Elimination of via-resistance-shift by increasing via size at a last levelFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →