Inventor · disambiguated record
Annelies Delabie
Also filed as: DELABIE ANNELIES
10 granted patents·1 pending application·482 citations·filing 2005–2021
86Inventor score
Top patents by PatentIndex Score
11 records- 0197US7579285B2Atomic layer deposition method for depositing a layerIMEC·Filed 2006·Granted Aug 25, 2009·464 cites·37 claims
- 0286US8921228B2Method for selectively depositing noble metals on metal/metal nitride substratesIMEC·Filed 2012·Granted Dec 30, 2014·4 cites·18 claims
- 0382US8007865B2Atomic layer deposition (ALD) method and reactor for producing a high quality layerIMEC·Filed 2006·Granted Aug 30, 2011·9 cites·20 claims
- 0476US10056253B2Method for forming a vertical hetero-stack and a device including a vertical hetero-stackIMEC VZW·Filed 2017·Granted Aug 21, 2018·2 cites·20 claims
- 0571US9028623B2Oxygen monolayer on a semiconductorIMEC·Filed 2014·Granted May 12, 2015·2 cites·18 claims
- 0659US9041164B2Conformal anti-reflective coatingIMEC·Filed 2014·Granted May 26, 2015·1 cites·20 claims
- 0755US11476119B2Method of manufacturing a semiconductor structureIMEC VZW·Filed 2021·Granted Oct 18, 2022·0 cites·16 claims
- 0849US9984874B2Method of producing transition metal dichalcogenide layerIMEC VZW·Filed 2014·Granted May 29, 2018·0 cites·19 claims
- 0939US2020111892A1Process of forming a gate of a semiconductor deviceIMEC VZW·Filed 2019·Application pending·0 cites
- 1034US7927933B2Method to enhance the initiation of film growthIMEC·Filed 2005·Granted Apr 19, 2011·0 cites·34 claims
- 1130US9842734B2Method of forming a feature of a target material on a substrateIMEC VZW·Filed 2016·Granted Dec 12, 2017·0 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →